TN0201L/0401L, VN0300L/LS
Vishay Siliconix
Document Number: 70199
S-04279--Rev. E, 16-Jul-01
www.vishay.com
11-1
N-Channel 20-, 30-, 40-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max (
W
)
V
GS(th)
(V)
I
D
(A)
TN0201L
20
1.2 @ V
GS
= 10 V
0.5 to 2
0.64
TN0401L
40
1.2 @ V
GS
= 10 V
0.5 to 2
0.64
VN0300L
30
1.2 @ V
GS
= 10 V
0.8 to 2.5
0.64
VN0300LS
30
1.2 @ V
GS
= 10 V
0.8 to 2.5
0.67
FEATURES
BENEFITS
APPLICATIONS
D
Low On-Resistance: 0.85
W
D
Low Threshold: 1.4 V
D
Low Input Capacitance: 38 pF
D
Fast Switching Speed: 9 ns
D
Low Input and Output Leakage
D
Low Offset Voltage
D
Low-Voltage Operation
D
Easily Driven Without Buffer
D
High-Speed Circuits
D
Low Error Voltage
D
Direct Logic-Level Interface: TTL/CMOS
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
D
Solid-State Relays
Top View
TO-226AA
(TO-92)
S
D
G
1
2
3
TO-92S
(Copper Lead Frame)
Top View
S
D
G
1
2
3
TN0201L
TN0401L
VN0300L
VN0300LS
TN0201L
"S" TN
0201L
xxyy
TN0401L
"S" TN
0401L
xxyy
VN0300L
"S" VN
0300L
xxyy
"S" = Siliconix Logo
xxyy = Date Code
"S" VN
0300LS
xxyy
VN0300LS
"S" = Siliconix Logo
xxyy = Date Code
Device Marking
Front View
Device Marking
Front View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TN0201L
TN0401L
VN0300L
VN0300LS
Unit
Drain-Source Voltage
V
DS
20
40
30
30
Gate-Source Voltage
V
GS
"
20
"
20
"
30
"
30
V
Continuous Drain Current
T
A
= 25
_
C
0.64
0.64
0.64
0.67
Continuous Drain Current
(T
J
= 150
_
C)
T
A
= 100
_
C
I
D
0.38
0.38
0.38
0.43
A
Pulsed Drain Current
a
I
DM
1.5
1.5
3
3
T
A
= 25
_
C
0.8
0.8
0.8
0.9
Power Dissipation
T
A
= 100
_
C
P
D
0.32
0.32
0.32
0.4
W
Thermal Resistance, Junction-to-Ambient
R
thJA
156
156
156
156
_
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
_
C
Notes
a.
Pulse width limited by maximum junction temperature.
TN0201L/0401L, VN0300L/LS
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70199
S-04279--Rev. E, 16-Jul-01
SPECIFICATIONS (T
A
=
25_C UNLESS OTHERWISE NOTED)
Limits
TN0201L
TN0401L
VN0300L
VN0300LS
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
TN0201L
55
20
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V
I = 10
m
A
TN0401L
55
40
I
D
= 10
m
A
30
V
V
DS
= V
GS
, I
D
= 0.25 mA
1.4
0.5
2
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
1.5
0.8
2.5
V
DS
= 0 V, V
GS
=
"
20 V
"
10
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
"
30 V
"
100
nA
V
DS
= 30 V, V
GS
= 0 V
10
T
J
= 125
_
C
500
m
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 0.8 x V
(BR)DSS
, V
GS
= 0 V
1
m
A
T
J
= 125
_
C
100
V
DS
= 10 V, V
GS
= 4.5 V
0.9
0.25
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
3.5
1
1
A
V
GS
= 3.5 V, I
D
= 0.05 A
1.8
4
V
GS
= 5 V, I
D
= 0.3 A
1.2
3.3
V
GS
= 4.5 V, I
D
= 0.25 A
1.4
2
W
Drain-Source On-Resistance
b
r
DS(on)
T
J
= 125
_
C
2.6
4
W
V
GS
= 10 V, I
D
= 1 A
0.85
1.2
1.2
T
J
= 125
_
C
1.6
2.4
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.5 A
500
200
200
mS
Dynamic
Input Capacitance
C
iss
38
60
100
Output Capacitance
C
oss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
33
50
95
pF
Reverse Transfer Capacitance
C
rss
8
15
25
Switching
c
Turn-On Time
t
ON
V
DD
= 15 V, R
L
= 14
W
^
10
30
30
Turn-Off Time
t
OFF
I
D
^
1 A, V
GEN
= 10 V
R
G
= 25
W
13
30
30
ns
Notes
a.
For DESIGN AID ONLY, not subject to production testing..
VNDQ03
b.
Pulse test: PW
v
300
m
s duty cycle
v
2%.
c.
Switching time is essentially independent of operating temperature.
TN0201L/0401L, VN0300L/LS
Vishay Siliconix
Document Number: 70199
S-04279--Rev. E, 16-Jul-01
www.vishay.com
11-3
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
On-Resistance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
V
GS
Gate-Source Voltage (V)
V
GS
Gate-Source Voltage (V)
V
DS
Drain-to-Source Voltage (V)
V
DS
Drain-to-Source Voltage (V)
I
D
Drain Current (A)
T
J
Junction Temperature (
_
C)
2.0
0
1
2
3
4
5
1.6
1.2
0.8
0.4
0
6 V
5 V
4 V
3 V
2 V
7 V
V
GS
= 10 V
200
0
0.4
0.8
1.2
1.6
2.0
160
120
80
40
0
1.7 V
2.1 V
2.3 V
2.5 V
2.7 V
2.9 V
500
400
300
0
0
1
5
200
100
2
3
4
125
_
C
25
_
C
V
DS
= 15 V
T
J
= 55
_
C
2.5
2.0
1.5
0
0
1
1.0
0.5
2
3
0
4
8
12
16
20
3
2
0
1
2.25
2.00
1.75
0.50
50
10
150
1.50
1.25
30
70
110
1.00
0.75
I D = 0.5 A
0.1 A
10 V
I
D
= 0.2 A
V
GS
= 4.5 V
6 V
10 V
V
GS
= 10 V
0.5 A
1.0 A
I
D
Drain Current (A)
I
D
Drain Current (mA)
I
D
Drain Current (mA)
r
DS
(
on)
On-Resistance (
)
r
DS
(
on)
Drain-Source On-Resistance (
)
r
DS
(
on)
Drain-Source On-Resistance (
)
(
Normalized)
TN0201L/0401L, VN0300L/LS
Vishay Siliconix
www.vishay.com
11-4
Document Number: 70199
S-04279--Rev. E, 16-Jul-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
0.1
1
10
100
10
1
V
DD
= 25 V
R
G
= 25
W
V
GS
= 0 to 10 V
t
d(on)
Threshold Region
Capacitance
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Gate Charge
Load Condition Effects on Switching
Normalized Ef
fective
T
ransient
Thermal Impedance
t
1
Square Wave Pulse Duration (sec)
I
D
Drain Current (A)
V
DS
Drain-to-Source Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Q
g
Total Gate Charge (pC)
t
d(off)
t
r
t
f
10
1
0.6
0.8
2.0
1.0
1.2
1.4
1.6
1.8
V
DS
= 10 V
55
_
C
0.1
0.01
T
J
= 150
_
C
120
100
80
0
0
10
50
60
40
20
30
40
20
C
iss
C
rss
C oss
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1
5 K
1
100
500
10
0.5
5
50
1 K
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
6
5
4
0
0
80
400
3
2
160
240
320
1
I
D
= 1 A
V
DS
= 15 V
24 V
100
_
C
25
_
C
I
D
Drain Current (mA)
C
Capacitance (pF)
V
GS
Gate-to-Source V
oltage (V)
t
Switching T
ime (ns)
V
GS
= 0 V
f = MHz
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