TN2460L/TN2460T
Vishay Siliconix
Document Number: 70205
S-04279--Rev. D , 16-Jul-01
www.vishay.com
11-1
N-Channel 240-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max (
W
)
V
GS(th)
(V)
I
D
Min (mA)
TN2460L
60 @ V
GS
= 10 V
0.5 to 1.8
75
TN2460T
240
60 @ V
GS
= 10 V
0.5 to 1.8
51
FEATURES
BENEFITS
APPLICATIONS
D
Low On-Resistance: 40
W
D
Secondary Breakdown Free: 260 V
D
Low Power/Voltage Driven
D
Low Input and Output Leakage
D
Excellent Thermal Stability
D
Low Offset Voltage
D
Full-Voltage Operation
D
Easily Driven Without Buffer
D
Low Error Voltage
D
No High-Temperature
"Run-Away"
D
High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays,
Transistors, etc.
D
Telephone Mute Switches, Ringer Circuits
D
Power Supply, Converters
D
Motor Control
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
TN2460L
Device Marking
Front View
"S" TN
2406L
xxyy
"S" = Siliconix Logo
xxyy = Date Code
Marking Code: T2wll
T2 = Part Number Code for TN2460T
w = Week Code
ll = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TN2460L
TN2460T
Unit
Drain-Source Voltage
V
DS
240
240
Gate-Source Voltage
V
GS
"
20
"
20
V
_
T
A
= 25
_
C
75
51
Continuous Drain Current
(T
J
= 150
_
C)
T
A
= 100
_
C
I
D
48
32
mA
Pulsed Drain Current
a
I
DM
800
400
T
A
= 25
_
C
0.8
0.36
Power Dissipation
T
A
= 100
_
C
P
D
0.32
0.14
W
Thermal Resistance, Junction-to-Ambient
R
thJA
156
350
_
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
_
C
Notes
a.
Pulse width limited by maximum junction temperature.
TN2460L/TN2460T
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70205
S-04279--Rev. D , 16-Jul-01
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10
m
A
240
260
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
m
A
0.5
1.65
1.8
V
V
DS
= 0 V, V
GS
=
"
20 V
"
10
Gate-Body Leakage
I
GSS
T
J
= 125
_
C
"
5
nA
V
DS
= 120 V, V
GS
= 0 V
0.1
m
Zero Gate Voltage Drain Current
I
DSS
T
J
= 125
_
C
5
m
A
V
DS
= 10 V, V
GS
=10 V
75
140
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 4.5 V
20
130
mA
V
GS
= 10 V, I
D
= 0.05 A
38
60
Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 4.5 V, I
D
= 0.02 A
40
60
W
T
J
= 125
_
C
75
120
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.05 A
30
70
mS
Dynamic
Input Capacitance
C
iss
14
30
Output Capacitance
C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
4
15
pF
Reverse Transfer Capacitance
C
rss
1
10
Switching
c
Turn-On Time
t
ON
V
DD
= 25 V, R
L
= 500
W
8
20
Turn-Off Time
t
OFF
V
DD
= 25 V, R
L
= 500
W
I
D
^
0.05 A, V
GEN
= 10 V, R
G
= 25
W
20
35
ns
Notes
a.
For DESIGN AID ONLY, not subject to production testing.
VNDN24
b.
Pulse test: PW
v
80
m
s duty cycle
v
1%.
c.
Switching time is essentially independent of operating temperature.
TN2460L/TN2460T
Vishay Siliconix
Document Number: 70205
S-04279--Rev. D , 16-Jul-01
www.vishay.com
11-3
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
Transfer Characteristics
Normalized On-Resistance
vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
V
GS
Gate-Source Voltage (V)
V
GS
Gate-Source Voltage (V)
V
DS
Drain-to-Source Voltage (V)
I
D
Drain Current (A)
T
J
Junction Temperature (
_
C)
200
0
4
8
12
16
20
160
120
80
40
0
V
GS
= 10 V
4 V
3 V
2 V
100
80
60
0
0
1
5
40
20
2
3
4
V
DS
= 15 V
125
_
C
T
J
= 55
_
C
100
0
4
8
12
16
20
90
80
70
30
60
50
40
10 mA
50 mA
I
D
= 100 mA
On-Resistance vs. Drain Current
125
100
75
0
0
50
250
50
25
100
150
200
V
GS
= 10 V
2.25
2.00
1.75
0.50
50
10
150
1.50
1.25
30
70
110
1.00
0.75
V
GS
= 4.5 V
I
D
= 50 mA
Threshold Region
V
GS
Gate-Source Voltage (V)
10
1
0.01
0.75
1
2.5
0.1
1.25
1.5
1.75
2
2.25
55
_
C
T
J
= 150
_
C
V
DS
= 5 V
25
_
C
75
_
C
25
__
C
I
D
Drain Current (mA)
I
D
Drain Current (mA)
r
DS
(
on)
On-Resistance (
)
r
DS
(
on)
On-Resistance (
)
I
D
Drain Current (mA)
r
DS
(
on)
Drain-Source On-Resistance (
)
(
Normalized)
TN2460L/TN2460T
Vishay Siliconix
www.vishay.com
11-4
Document Number: 70205
S-04279--Rev. D , 16-Jul-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
10 K
1
0.01
0.1
0.1
1
100
10
1 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
Capacitance
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Gate Charge
Drive Resistance Effects on Switching
Normalized Ef
fective
T
ransient
Thermal Impedance
t
1
Square Wave Pulse Duration (sec)
R
G
Gate Resistor (
W
)
V
DS
Drain-to-Source Voltage (V)
Q
g
Total Gate Charge (pC)
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
20
16
12
0
0
10
50
8
4
20
30
40
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
15.0
12.5
10.0
0
0
50
300
7.5
5.0
100
150
200
2.5
250
I
D
= 30 mA
V
DS
= 100 V
192 V
Load Condition Effects on Switching
I
D
Drain Current (A)
10
50
100
100
10
1
20
50
20
5
2
V
DD
= 25 V
R
G
= 25
W
V
GS
= 0 to 10 V
t
f
t
d(off)
t
r
t
d(on)
10
50
10
1
20
50
2
V
DD
= 25 V
R
L
= 500
W
V
GS
= 0 to 10 V
I
D
= 50 mA
t
f
t
d(off)
t
r
t
d(on)
C
Capacitance (pF)
V
GS
Gate-to-Source V
oltage (V)
t
Switching T
ime (ns)
t
Switching T
ime (ns)
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