TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
Document Number: 70209
S-41260--Rev. H, 05-Jul-04
www.vishay.com
1
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max (
W
)
V
GS(th)
(V)
I
D
(A)
TP0610L
-60
10 @ V
GS
= -10 V
-1 to -2.4
-0.18
TP0610T
-60
10 @ V
GS
= -10 V
-1 to -2.4
-0.12
VP0610L
-60
10 @ V
GS
= -10 V
-1 to -3.5
-0.18
VP0610T
-60
10 @ V
GS
= -10 V
-1 to -3.5
-0.12
BS250
-45
14 @ V
GS
= -10 V
-1 to -3.5
-0.18
FEATURES
BENEFITS
APPLICATIONS
D High-Side Switching
D Low On-Resistance: 8 W
D Low Threshold: -1.9 V
D Fast Switching Speed: 16 ns
D Low Input Capacitance: 15 pF
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Switching
D Easily Driven Without Buffer
D Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories,
Transistors, etc.
D Battery Operated Systems
D Power Supply, Converter Circuits
D Motor Control
TP0610T
VP0610T
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
TO-92-18RM
(TO-18 Lead Form)
Top View
D
S
G
1
2
3
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
BS250
TP0610L
VP0610L
Device Marking
Front View
"S" TP
0610L
xxll
Device Marking
Front View
"S" VP
0610L
xxll
"S" = Siliconix Logo
xxll
= Date Code
TP0610L
VP0610L
Device Marking
Front View
"S" BS
250
xxll
"S" = Siliconix Logo
xxll
= Date Code
BS250
Marking Code:
TP0610T: TO
wll
VP0610T: VOwll
w
= Week Code
lL
= Lot Traceability
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TP0610L TP0610T VP0610L VP0610T
BS250
Unit
Drain-Source Voltage
V
DS
-60
-60
-60
-60
-45
V
Gate-Source Voltage
V
GS
"30
"30
"30
"30
"25
V
Continuous Drain Current
T
A
= 25_C
I
D
-0.18
-0.12
-0.18
-0.12
-0.18
Continuous Drain Current
(T
J
= 150_C)
T
A
= 100_C
I
D
-0.11
-0.07
-0.11
-0.07
A
Pulsed Drain Current
a
I
DM
-0.8
-0.4
-0.8
-0.4
Power Dissipation
T
A
= 25_C
P
D
0.8
0.36
0.8
0.36
0.83
W
Power Dissipation
T
A
= 100_C
P
D
0.32
0.14
0.32
0.14
W
Thermal Resistance, Junction-to-Ambient
R
thJA
156
350
156
350
150
_C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
_C
Notes
a.
Pulse width limited by maximum junction temperature.
For applications information see AN804.
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
www.vishay.com
2
Document Number: 70209
S-41260--Rev. H, 05-Jul-04
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
TP0610L/T
VP0610L/T
BS250
Parameter
Symbol
Test Conditions
Typ
a
Min Max Min Max Min Max Unit
Static
Drain-Source
V
(BR)DSS
V
GS
= 0 V, I
D
= -10 mA
-70
-60
-60
Drain Source
Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= -100 mA
-45
V
Gate-Threshold
Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -1 mA
-1.9
-1
-2.4
-1
-3.5
-1
-3.5
V
V
DS
= 0 V, V
GS
= "20 V
"10
"10
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= "20 V, T
J
= 125_C
"50
nA
y
g
GSS
V
DS
= 0 V, V
GS
= "15 V
"20
G
V
DS
= -48 V, V
GS
= 0 V
-1
-1
Zero Gate Voltage
Drain Current
I
DSS
V
DS
= -48 V, V
GS
= 0 V, T
J
= 125_C
-200
-200
mA
Drain Current
DSS
V
DS
= -25 V, V
GS
= 0 V
-0.5
m
O S
V
DS
= -10 V, V
GS
= -4.5 V
-180
-50
On-State Drain
Current
b
I
D(on)
V
DS
= 10 V V
GS
= 10 V
L Suffix
-750
-600
mA
Current
b
D(on)
V
DS
= -10 V, V
GS
= -10 V
T Suffix
-220
V
GS
= -4.5 V, I
D
= -25 mA
11
25
Drain-Source
r
DS( )
V
GS
= -10 V, I
D
= -0.5 A
L Suffix
8
10
10
W
Drain-Source
On-Resistance
b
r
DS(on)
V
GS
= -10 V, I
D
= -0.5 A, T
J
= 125_C
L Suffix
15
20
20
W
V
GS
= -10 V, I
D
= -0.2 A
T Suffix
6.5
10
10
14
Forward
g
f
V
DS
= -10 V, I
D
= -0.5 A
L Suffix
20
80
mS
Forward
Transconductance
b
g
fs
V
DS
= -10 V, I
D
= -0.1 A
T Suffix
90
60
70
mS
Diode Forward
Voltage
V
SD
I
S
= -0.5 A, V
GS
= 0 V
-1.1
V
Dynamic
Input Capacitance
C
iss
15
60
60
Output Capacitance
C
oss
V
DS
= -25 V, V
GS
= 0 V
f = 1 MHz
10
25
25
pF
Reverse Transfer
Capacitance
C
rss
f = 1 MHz
3
5
5
pF
Switching
c
Turn-On Time
t
ON
V
DD
= -25 V, R
L
= 133 W
8
10
ns
Turn-Off Time
t
OFF
V
DD
= 25 V, R
L
= 133 W
I
D
^ -0.18 A, V
GEN
= -10 V, R
g
= 25 W
8
10
ns
Notes
a.
For DESIGN AID ONLY, not subject to production testing.
VPDS06
b.
Pulse test: PW v300 ms duty cycle v2%.
c.
Switching time is essentially independent of operating temperature.
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
Document Number: 70209
S-41260--Rev. H, 05-Jul-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
300
600
900
1200
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
Drain Current (A)
I D
V
GS
= 10 V
5 V
4 V
V
GS
- Gate-to-Source Voltage (V)
-
Drain Current (mA)
I D
T
J
= -55_C
125_C
25_C
0.0
0.3
0.6
0.9
1.2
1.5
1.8
-50
-25
0
25
50
75
100
125
150
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (_C)
V
GS
= 10 V @ 500 mA
V
GS
= 4.5 V @ 25 mA
0
3
6
9
12
15
0.0
0.3
0.6
0.9
1.2
1.5
1.8
I
D
= 500 mA
Gate Charge
-
Gate-to-Source V
oltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0
4
8
12
16
20
0
200
400
600
800
1000
On-Resistance vs. Drain Current
I
D
- Drain Current (mA)
V
GS
= 4.5 V
V
GS
= 10 V
-
On-Resistance (
r DS(on)
W
)
0
8
16
24
32
40
0
5
10
15
20
25
Capacitance
V
DS
- Drain-to-Source Voltage (V)
C
-
Capacitance (pF)
C
rss
C
oss
C
iss
V
GS
= 0 V
6 V
7 V
V
GS
= 5 V
V
DS
= 30 V
V
DS
= 48 V
8 V
r
DS
(
on)
-
On-Resiistance
(Normalized)
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
www.vishay.com
4
Document Number: 70209
S-41260--Rev. H, 05-Jul-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
2
4
6
8
10
0
2
4
6
8
10
On-Resistance vs. Gate-Source Voltage
V
GS
- Gate-to-Source Voltage (V)
I
D
= 500 mA
I
D
= 200 mA
-
On-Resistance (
r DS(on)
W
)
1.2
1.5
1
100
1000
0.00
0.3
0.6
0.9
T
J
= 25_C
T
J
= 125_C
Source-Drain Diode Forward Voltage
V
SD
- Source-to-Drain Voltage (V)
-
Source Current (A)
I
S
10
T
J
= -55_C
V
GS
= 0 V
Threshold Voltage Variance Over Temperature
V
ariance (V)
V
GS(th)
-0.3
-0.2
-0.1
-0.0
0.1
0.2
0.3
0.4
0.5
-50
-25
0
25
50
75
100
125
150
I
D
= 250 mA
T
J
- Junction Temperature (_C)
10
-3
10
-2
1
10
600
10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
Normalized Ef
fective
T
ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 350_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
0.01
0
1
2.5
3
100
600
0.1
Power (W)
Single Pulse Power, Junction-to-Ambient
Time (sec)
1.5
2
0.5
1
10
T
A
= 25_C
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