VISHAY
TSDF02830YR
Document Number 85164
Rev. 1, 25-Oct-02
Vishay Semiconductors
www.vishay.com
1
VY
CW
WM1
1
2
3
6
5
4
16980
Electrostatic sensitive device.
Observe precautions for handling.
Dual - MOSMIC
- two AGC Amplifiers for
TV-Tuner Prestage with
5 V Supply Voltage
Comments
MOSMIC - MOS Monolithic Integrated Circuit
Features
Easy Gate 1 switch-off with PNP switching transis-
tors inside PLL
Two differently optimized amplifiers in a single
package
Integrated gate protection diodes
Low noise figure, high gain
Typical forward transadmittance of 31 mS resp 28
mS
Partly internal self biasing-network on chip
Superior cross modulation at gain reduction
High AGC-range with soft slope
Main AGC control range from 3 V to 0.5 V
Supply voltage 5 V (3 V to 7 V)
SMD package, reverse pinning
Applications
Low noise gain controlled VHF and UHF input stages,
such as in digital and analog TV tuners.
Mechanical Data
Weight: 6 mg
Case: SOT 363R
V - Vishay
Y - Year, is variable for digit from 0 to 9
(e.g. 0 = 2000, 1 = 2001)
CW - Calendar Week, is variable for number
from 01 to 52
Number of Calendar Week is always indicating
place of pin 1
Pinning:
1 = Gate 1 (amplifier 1), 2 = Source,
3 = Drain (amplifier 1), 4 = Drain (amplifier 2),
5 = Gate 2, 6 = Gate 1 (amplifier 2)
AMP2
AMP1
G1
6
G1
1
AGC
VHF in
UHF in
C
C
D 4
G2 (common)
5
S (common)
C
RFC
VHF out
+5 V
D 3
C
RFC
UHF out
16979
+5 V
C
2
RG1
RG1
+5 V
+5 V
Document Number 85164
Rev. 1, 25-Oct-02
www.vishay.com
2
VISHAY
TSDF02830YR
Vishay Semiconductors
Parts Table
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Amplifier 1
Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for UHF applications
Amplifier 2
Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for VHF applications
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Amplifier 1
Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for UHF applications
Part
Marking
Package
TSDF02830YR
WM1
SOT363R
Parameter
Test condition
Symbol
Value
Unit
Drain - source voltage
V
DS
8
V
Drain current
I
D
25
mA
Gate 1/Gate 2 - source peak
current
I
G1/G2SM
10
mA
Gate 1 - source voltage
+ V
G1SM
6
V
- V
G1SM
1.5
V
Gate 2 - source voltage
V
G2SM
6
V
Total power dissipation
T
amb
60 C
P
tot
200
mW
Channel temperature
T
Ch
150
C
Storage temperature range
T
stg
- 55 to + 150
C
Channel ambient
on glass fibre printed board (25 x
20 x 1.5) mm
3
plated with 35 m
Cu
R
thChA
450
K/W
Parameter
Test condition
Symbol
Value
Unit
Drain - source voltage
V
DS
8
V
Drain current
I
D
30
mA
Gate 1/Gate 2 - source peak
current
I
G1/G2SM
10
mA
Gate 1 - source voltage
+ V
G1SM
6
V
- V
G1SM
1.5
V
Gate 2 - source voltage
V
G2SM
6
V
Total power dissipation
T
amb
60 C
P
tot
200
mW
Channel temperature
T
Ch
150
C
Storage temperature range
T
stg
- 55 to + 150
C
Channel ambient
on glass fibre printed board (25 x
20 x 1.5) mm
3
plated with 35 m
Cu
R
thChA
450
K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Drain - source breakdown voltage
I
D
= 10 A, V
G1S
= V
G2S
= 0
V
(BR)DSS
12
V
Gate 1 - source breakdown voltage + I
G1S
= 10 mA, V
G2S
= V
DS
= 0
+ V
(BR)G1SS
7
10
V
Gate 2 - source breakdown voltage
I
G2S
= 10 mA, V
G1S
= V
DS
= 0
V
(BR)G2SS
7
10
V
VISHAY
TSDF02830YR
Document Number 85164
Rev. 1, 25-Oct-02
Vishay Semiconductors
www.vishay.com
3
Amplifier 2
Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for VHF applications
Electrical AC Characteristics
T
amb
= 25 C, unless otherwise specified
Amplifier 1
V
DS
= V
RG1
= 5 V, V
G2S
= 4 V, R
G1
= 100 k
, I
D
= I
DSO,
f = 1 MHz, T
amb
= 25 C, unless otherwise specified
Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for UHF applications
Gate 1 - source leakage current
+ V
G1S
= 5 V, V
G2S
= V
DS
= 0
+ I
G1SS
20
nA
Gate 2 - source leakage current
V
G2S
= 5 V, V
G1S
= V
DS
= 0
I
G2SS
20
nA
Drain - source operating current
V
DS
= V
RG1
= 5 V, V
G2S
= 4 V, R
G1
= 56 k
I
DSO
8
12
17
mA
Gate 1 - source cut-off voltage
V
DS
= 5 V, V
G2S
= 4, I
D
= 20 A
V
G1S(OFF)
0.3
1.0
V
Gate 2 - source cut-off voltage
V
DS
= V
RG1
= 5 V, R
G1
=100 k
, I
D
= 20 A
V
G2S(OFF)
0.3
1.2
V
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Drain - source breakdown voltage
I
D
= 10 A, V
G1S
= V
G2S
= 0
V
(BR)DSS
12
V
Gate 1 - source breakdown voltage + I
G1S
= 10 mA, V
G2S
= V
DS
= 0
+ V
(BR)G1SS
7
10
V
Gate 2 - source breakdown voltage
I
G2S
= 10 mA, V
G1S
= V
DS
= 0
V
(BR)G2SS
7
10
V
Gate 1 - source leakage current
+ V
G1S
= 5 V, V
G2S
= V
DS
= 0
+ I
G1SS
20
nA
Gate 2 - source leakage current
V
G2S
= 5 V, V
G1S
= V
DS
= 0
I
G2SS
20
nA
Drain - source operating current
V
DS
= V
RG1
= 5 V, V
G2S
= 4 V, R
G1
= 56 k
I
DSO
8
12
17
mA
Gate 1 - source cut-off voltage
V
DS
= 5 V, V
G2S
= 4, I
D
= 20 A
V
G1S(OFF)
0.3
1.0
V
Gate 2 - source cut-off voltage
V
DS
= V
RG1
= 5 V, R
G1
= 56 k
, I
D
= 20 A
V
G2S(OFF)
0.3
1.2
V
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward transadmittance
|y
21s
|
27
31
35
mS
Gate 1 input capacitance
C
issg1
1.9
2.3
pF
Feedback capacitance
C
rss
20
fF
Output capacitance
C
oss
0.9
pF
Power gain
G
S
= 2 mS, B
S
= B
Sopt
, G
L
= 0.5
mS, B
L
= B
Lopt
, f = 200 MHz
G
ps
33
dB
G
S
= 2 mS, B
S
= B
Sopt
, G
L
= 1 mS,
B
L
= B
Lopt
, f = 400 MHz
G
ps
30
dB
G
S
= 3.3 mS, B
S
= B
Sopt
, G
L
= 1
mS, B
L
= B
Lopt
, f = 800 MHz
G
ps
25
dB
AGC range
V
DS
= 5 V, V
G2S
= 0.5 to 4 V, f = 200
MHz
G
ps
50
dB
Noise figure
G
S
= G
L
= 20 mS, B
S
= B
L
= 0, f =
50 MHz
F
6.0
8.0
dB
G
S
= 2 mS, G
L
= 1 mS, B
S
= B
Sopt
,
f = 400 MHz
F
1.0
1.5
dB
G
S
= 3.3 mS, G
L
= 1 mS, B
S
=
B
Sopt
, f = 800 MHz
F
1.3
2.0
dB
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Document Number 85164
Rev. 1, 25-Oct-02
www.vishay.com
4
VISHAY
TSDF02830YR
Vishay Semiconductors
Remark on improving intermodulation behavior:
By setting R
G1
smaller than 100 k
, e.g. 68 k typical value of I
DSO
will raise and improved intermodulation behavior will be performed.
Amplifier 2
V
DS
= V
RG1
= 5 V, V
G2S
= 4 V, R
G1
= 56 k
, I
D
= I
DSO,
f = 1 MHz, T
amb
= 25 C, unless otherwise specified
Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for VHF applications
Remark on improving intermodulation behavior:
By setting R
G1
smaller than 56 k
, typical value of I
DSO
will raise and improved intermodulation behavior will be performed.
Cross modulation
Input level for k = 1 % @ 0 dB AGC
f
w
= 50 MHz, f
unw
= 60 MHz
X
mod
90
dBV
Input level for k = 1 % @ 40 dB
AGC f
w
= 50 MHz, f
unw
= 60 MHz
X
mod
100
105
dBV
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward transadmittance
|y
21s
|
23
28
33
mS
Gate 1 input capacitance
C
issg1
2.5
3.0
pF
Feedback capacitance
C
rss
20
fF
Output capacitance
C
oss
0.9
pF
Power gain
G
S
= 2 mS, B
S
= B
Sopt
, G
L
= 0.5
mS, B
L
= B
Lopt
, f = 200 MHz
G
ps
32
dB
G
S
= 2 mS, B
S
= B
Sopt
, G
L
= 1 mS,
B
L
= B
Lopt
, f = 400 MHz
G
ps
28
dB
G
S
= 3.3 mS, B
S
= B
Sopt
, G
L
= 1
mS, B
L
= B
Lopt
, f = 800 MHz
G
ps
22
dB
AGC range
V
DS
= 5 V, V
G2S
= 0.5 to 4 V, f = 200
MHz
G
ps
50
dB
Noise figure
G
S
= G
L
= 20 mS, B
S
= B
L
= 0, f =
50 MHz
F
4.5
6.0
dB
G
S
= 2 mS, G
L
= 1 mS, B
S
= B
Sopt
,
f = 400 MHz
F
1.0
1.6
dB
G
S
= 3.3 mS, G
L
= 1 mS, B
S
=
B
Sopt
, f = 800 MHz
F
1.5
2.3
dB
Cross modulation
Input level for k = 1 % @ 0 dB AGC
f
w
= 50 MHz, f
unw
= 60 MHz
X
mod
90
dBV
Input level for k = 1 % @ 40 dB
AGC f
w
= 50 MHz, f
unw
= 60 MHz
X
mod
105
dBV
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
PDF 
ZIP