TSDF54040
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 16-Mar-99
1 (5)
Document Number 85071
Dual - MOSMIC
two AGC Amplifiers for TVTuner
Prestage with 5 V Supply Voltage
MOSMIC - MOS Monolithic Integrated Circuit
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
Typical Application
Amplifier 1
G2
G1
RF in
AGC
S
D
V
DD
C block
RFC
RF out
94 9296
C block
C block
Amplifier 2
G2
G1
RF in
AGC
S
D
V
DD
C block
RFC
RF out
94 9296
C block
C block
Features
D
Two AGC amplifiers in a single package
D
Integrated gate protection diodes
D
Low noise figure
D
High gain, high forward transadmittance
(40 mS typ.)
D
Biasing network on chip
D
Improved cross modulation at gain reduction
D
High AGC-range
D
SMD package
16022
1
3
2
6
4
5
WD4
TY
CW
TSDF54040 Marking: WD4
Plastic case (SOT 363)
16 0152
1 = Gate 1 (amplifier 1), 2 = Gate 2, 3 = Drain (amplifier 1),
4 = Drain (amplifier 2), 5 = Source, 6 = Gate1 (amplifier 2)
T = Telefunken
Y = Year, is variable for digit from 0 to 9 (e.g. 9 = 1999, 0 = 2000)
CW = Calendar Week, is variable for number from 01 to 52
Number of Calendar Week is always indicating place of pin 1
TSDF54040
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 16-Mar-99
2 (5)
Document Number 85071
All of following data and characteristics are valid for operating either
amplifier 1 (pin 1, 3, 2, 5) or amplifier 2 (pin 6, 4, 2, 5)
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Drain - source voltage
V
DS
8
V
Drain current
I
D
30
mA
Gate 1/Gate 2 - source peak current
I
G1/G2SM
10
mA
Gate 1/Gate 2 - source voltage
V
G1/G2SM
6
V
Total power dissipation
T
amb
60
C
P
tot
200
mW
Channel temperature
T
Ch
150
C
Storage temperature range
T
stg
55 to +150
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Channel ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
R
thChA
450
K/W
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
Gate 1 - source
breakdown voltage
I
G1S
= 10 mA, V
G2S
= V
DS
= 0
V
(BR)G1SS
7
10
V
Gate 2 - source
breakdown voltage
I
G2S
= 10 mA, V
G1S
= V
DS
= 0
V
(BR)G2SS
7
10
V
Gate 1 - source
+V
G1S
= 5 V, V
G2S
= V
DS
= 0
+I
G1SS
50
m
A
leakage current
V
G1S
= 5 V, V
G2S
= V
DS
= 0
I
G1SS
100
m
A
Gate 2 - source
leakage current
V
G2S
= 5 V, V
G1S
= V
DS
= 0
I
G2SS
20
nA
Drain current
V
DS
= 5 V, V
G1S
= 0, V
G2S
= 4 V
I
DSS
50
500
m
A
Self-biased
operating current
V
DS
= 5 V, V
G1S
= nc, V
G2S
= 4 V
I
DSP
9
13
18
mA
Gate 2 - source
cut-off voltage
V
DS
= 5 V, V
G1S
= nc, I
D
= 20
m
A
V
G2S(OFF)
1.0
V
TSDF54040
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 16-Mar-99
3 (5)
Document Number 85071
Electrical AC Characteristics
V
DS
= 5 V, V
G2S
= 4 V, f = 1 MHz , T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Forward transadmittance
y
21s
35
40
50
mS
Gate 1 input capacitance
C
issg1
2.7
3.5
pF
Feedback capacitance
C
rss
30
fF
Output capacitance
C
oss
1.5
pF
Power gain
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
G
ps
28
dB
g
G
S
= 3,3 mS, G
L
= 1 mS, f = 800 MHz
G
ps
20
23
dB
AGC range
V
DS
= 5 V, V
G2S
= 1 to 4 V, f = 800 MHz
D
G
ps
45
dB
Noise figure
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
F
1
dB
g
G
S
= 3,3 mS, G
L
= 1 mS, f = 800 MHz
F
1.3
dB
Cross modulation
Input level for k = 1 % @ 0 dB AGC
f
w
= 50 MHz, f
unw
= 60 MHz
X
mod
85
dB
m
V
Input level for k = 1 % @ 40 dB AGC
f
w
= 50 MHz, f
unw
= 60 MHz
X
mod
100
dB
m
V
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with V
G1S
< 0.7 V is feasible.
Using open collector switching transistor (inside of PLL), insert 10 k
W
collector resistor.
TSDF54040
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 16-Mar-99
4 (5)
Document Number 85071
Dimensions of TSDF54040 in mm
14280
TSDF54040
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 16-Mar-99
5 (5)
Document Number 85071
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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