TSHA520.
Vishay Telefunken
1 (6)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81019
GaAlAs Infrared Emitting Diodes in 5 mm (T1
)
Package
Description
The TSHA520. series are high efficiency infrared emit-
ting diodes in GaAlAs on GaAlAs technology, molded
in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs
technology these high intensity emitters feature about
70 % radiant power improvement.
Features
D
Extra high radiant power and radiant intensity
D
Suitable for high pulse current operation
D
Standard T1
( 5 mm) package
D
Angle of half intensity
=
12
D
Peak wavelength
l
p
= 875 nm
D
High reliability
D
Good spectral matching to Si photodetectors
94 8390
Applications
Infrared remote control and free air transmission systems with high power and long transmission distance re-
quirements in combination with PIN photodiodes or phototransistors.
Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission range between emitter and detector.
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
V
R
5
V
Forward Current
I
F
100
mA
Peak Forward Current
t
p
/T = 0.5, t
p
= 100
m
s
I
FM
200
mA
Surge Forward Current
t
p
= 100
m
s
I
FSM
2.5
A
Power Dissipation
P
V
210
mW
Junction Temperature
T
j
100
C
Operating Temperature Range
T
amb
55...+100
C
Storage Temperature Range
T
stg
55...+100
C
Soldering Temperature
t
x
5sec, 2 mm from case
T
sd
260
C
Thermal Resistance Junction/Ambient
R
thJA
350
K/W
TSHA520.
Vishay Telefunken
3 (6)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81019
Typical Characteristics (T
amb
= 25
_
C unless otherwise specified)
0
20
40
60
80
0
50
100
150
200
250
P
Power Dissipation ( mW
)
V
T
amb
Ambient Temperature (
C )
100
94 7957 e
R
thJA
Figure 1. Power Dissipation vs. Ambient Temperature
0
20
40
60
80
0
25
50
75
100
125
I Forward Current ( mA
)
F
T
amb
Ambient Temperature (
C )
100
94 8002 e
Figure 2. Forward Current vs. Ambient Temperature
t
p
Pulse Duration ( ms )
94 8003 e
10
0
10
1
10
1
10
1
10
1
10
0
10
2
10
2
I Forward Current (
A
)
F
t
p
/ T = 0.01
I
FSM
= 2.5 A ( Single Pulse )
0.05
0.1
0.2
0.5
Figure 3. Pulse Forward Current vs. Pulse Duration
0
1
2
3
V
F
Forward Voltage ( V )
4
94 8005 e
10
1
10
2
10
3
10
4
I Forward Current ( mA
)
F
t
p
= 100
ms
t
p
/ T = 0.001
Figure 4. Forward Current vs. Forward Voltage
0
20
40
60
80
0.7
0.8
0.9
1.0
1.1
1.2
V
Relative Forward
V
oltage
Frel
T
amb
Ambient Temperature (
C )
100
94 7990 e
I
F
= 10 mA
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
I
F
Forward Current ( mA )
94 8006 e
10
3
10
1
10
2
10
4
10
0
1
10
100
1000
I Radiant Intensity ( mW/sr )
e
TSHA 5200
TSHA 5201
TSHA 5202
TSHA 5203
Figure 6. Radiant Intensity vs. Forward Current
TSHA520.
Vishay Telefunken
4 (6)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81019
Radiant Power ( mW
)
e
I
F
Forward Current ( mA )
94 8007 e
F
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Figure 7. Radiant Power vs. Forward Current
10
10
50
0
100
0
0.4
0.8
1.2
1.6
I ;
e rel e rel
T
amb
Ambient Temperature (
C )
140
94 8020 e
F
I
F
= 20 mA
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
780
880
l Wavelength ( nm )
980
94 8000 e
Relative Radiant Power
e
F
0
0.25
0.5
0.75
1.0
1.25
I
F
= 100 mA
F
e
(
l)
rel
=
F
e
(
l)/F
e
(
l
p
)
Figure 9. Relative Radiant Power vs. Wavelength
0.4
0.2
0
0.2
0.4
I Relative Radiant Intensity
e rel
0.6
94 8008 e
0.6
0.9
0.8
0
30
10
20
40
50
60
70
80
0.7
1.0
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
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