TSOP344..SB1F
Document Number 82273
Rev. 1.1, 28-Feb-05
Vishay Semiconductors
www.vishay.com
1
16656
1
2
3
IR Receiver Modules for Remote Control Systems
Description
The TSOP344..SB1F - series are miniaturized receiv-
ers for infrared remote control systems. PIN diode
and preamplifier are assembled on lead frame, the
epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP344..SB1F is a
standard IR remote control receiver series for 3 V
supply voltage with excellent suppression of distur-
bance signals.
Features
Photo detector and preamplifier in one
package
Internal filter for PCM frequency
Improved shielding against electrical
field
disturbance
TTL and CMOS compatibility
Output active low
Supply voltage range: 2.7 V to 5.5 V
Improved immunity against ambient light
Enhanced suppression of disturbance signals by
special filtering
Mechanical Data
Pinning:
1 = OUT, 2 = GND, 3 = V
S
Parts Table
Part
Carrier Frequency
TSOP34430SB1F
30 kHz
TSOP34433SB1F
33 kHz
TSOP34436SB1F
36 kHz
TSOP34437SB1F
36.7 kHz
TSOP34438SB1F
38 kHz
TSOP34440SB1F
40 kHz
TSOP34456SB1F
56 kHz
Block Diagram
Application Circuit
30 k
2
3
1
V
S
OUT
Demo-
GND
Pass
AGC
Input
PIN
Band
dulator
Control Circuit
16833
C
1
=
4.7 F
TSOPxxxx
OUT
GND
Circuit
C
R
1
= 100
+V
S
GND
Transmitter
with
TSALxxxx
V
S
R
1
+ C
1
recommended to suppress power supply
disturbances.
V
O
The output voltage should not be hold continuously at
a voltage below V
O =
2.0 V by the external circuit.
17170
e3
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2
Document Number 82273
Rev. 1.1, 28-Feb-05
TSOP344..SB1F
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Electrical and Optical Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Supply Voltage
(Pin 3)
V
S
- 0.3 to + 6.0
V
Supply Current
(Pin 3)
I
S
3
mA
Output Voltage
(Pin 1)
V
O
- 0.3 to V
S
+ 0.3 V
V
Output Current
(Pin 1)
I
O
10
mA
Junction Temperature
T
j
100
C
Storage Temperature Range
T
stg
- 25 to + 85
C
Operating Temperature Range
T
amb
- 25 to + 85
C
Power Consumption
(T
amb
85 C)
P
tot
30
mW
Soldering Temperature
t
10 s, 1mm from case
T
sd
260
C
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Supply Current (Pin 3)
E
v
= 0, V
S
= 3 V
I
SD
0.7
1.2
1.5
mA
E
v
= 40 klx, sunlight
I
SH
1.3
mA
Supply Voltage
V
S
2.7
5.5
V
Transmission Distance
E
v
= 0, test signal see fig.1,
IR diode TSAL6200,
I
F
= 250 mA
d
35
m
Output Voltage Low (Pin 1)
I
OSL
= 0.5 mA, E
e
= 0.7 mW/m
2
,
test signal see fig. 1
V
OSL
250
mV
Minimum Irradiance
(30 - 40 kHz)
V
S
= 3 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.1
E
e min
0.2
0.4
mW/m
2
Minimum Irradiance (56 kHz)
V
S
= 3 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.1
E
e min
0.3
0.5
mW/m
2
Minimum Irradiance
(30 - 40 kHz)
V
S
= 5 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.1
E
e min
0.35
0.5
mW/m
2
Minimum Irradiance (56 kHz)
V
S
= 5 V
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.1
E
e min
0.45
0.6
mW/m
2
Maximum Irradiance
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
E
e max
30
W/m
2
Directivity
Angle of half transmission
distance
1/2
45
deg
TSOP344..SB1F
Document Number 82273
Rev. 1.1, 28-Feb-05
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25
C unless otherwise specified)
Figure 1. Output Function
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 3. Output Function
E
e
T
t
pi
*
t
* t
pi
w 10/fo is recommended for optimal function
V
O
V
OH
V
OL
t
16110
Optical Test Signal
(IR diode TSAL6200, I
F
= 0.4 A, 30 pulses, f = f
0
, T = 10 ms)
Output Signal
t
d
1 )
t
po
2 )
1 )
7/f
0
< t
d
< 15/f
0
2 )
t
pi
5/f
0
< t
po
< t
pi
+6/f
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1.0
10.0
100.0 1000.010000.0
E
e
Irradiance ( mW/m
2
)
16908
Input Burst Duration
l = 950 nm,
optical test signal, fig.1
Output Pulse
t
Output
Pulse
W
idt
h (
ms
)
po
E
e
t
V
O
V
OH
V
OL
t
600
ms
600
ms
T = 60 ms
T
on
T
off
94 8134
Optical Test Signal
Output Signal, ( see Fig.4 )
Figure 4. Output Pulse Diagram
Figure 5. Frequency Dependence of Responsivity
Figure 6. Sensitivity in Bright Ambient
T
,
T
Output
Pulse
W
idt
h (
ms
)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1.0
10.0
100.0 1000.010000.0
E
e
Irradiance ( mW/m
2
)
16909
Toff
l = 950 nm,
optical test signal, fig.3
Ton
on
o
ff
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.7
0.9
1.1
1.3
f/f
0
Relative Frequency
16925
f = f
0
"5%
Df ( 3dB ) = f
0
/10
E / E R
el
. R
esponsi
v
it
y
e
min
e
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.01
0.10
1.00
10.00
100.00
E Ambient DC Irradiance (W/m
2
)
16911
Correlation with ambient light sources:
10W/m
2
^1.4klx (Std.illum.A,T=2855K)
10W/m
2
^8.2klx (Daylight,T=5900K)
Ambient,
l = 950 nm
E
T
h
res
h
old
Irradiance
(
m
W/
m
)
e
min
2
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4
Document Number 82273
Rev. 1.1, 28-Feb-05
TSOP344..SB1F
Vishay Semiconductors
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
0.0
0.5
1.0
1.5
2.0
0.1
1.0
10.0
100.0
1000.0
DV
sRMS
AC Voltage on DC Supply Voltage (mV)
16912
f = f
o
f = 10 kHz
E
T
h
res
h
old
Irradiance
(
m
W/
m
)
e
min
2
f = 1 kHz
f = 100 Hz
E
T
h
res
h
old
Irradiance
(
m
W/
m
)
0.0
0.4
0.8
1.2
1.6
0.0
0.4
0.8
1.2
2.0
E Field Strength of Disturbance ( kV/m )
2.0
94 8147
1.6
e
min
2
f(E) = f
0
0.0
0.1
0.2
0.3
0.4
10
30
50
70
90
110
Burst Length ( number of cycles / burst )
16917
f = 38 kHz, E
e
= 2 mW/m
2
M
a
x. E
n
v
elope
Dut
y
C
y
cle
Figure 10. Sensitivity vs. Ambient Temperature
Figure 11. Relative Spectral Sensitivity vs. Wavelength
Figure 12. Sensitivity vs. Supply Voltage
0.0
0.1
0.2
0.3
0.4
0.5
0.6
30 15
0
15
30
45
60
75
90
T
amb
Ambient Temperature ( C )
16918
Sensitivity in dark ambient
E
T
h
res
h
old
Irradiance
(
m
W/
m
)
e
min
2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
750
850
950
1050
1150
18998
- Wavelength ( nm )
S
()
-
R
elati
v
e
Spectral
Sensiti
v
it
y
rel
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
V
S
Supply Voltage ( V )
17185
E
Sensiti
v
it
y (
m
W/
m
)
2
e
min
TSOP344..SB1F
Document Number 82273
Rev. 1.1, 28-Feb-05
Vishay Semiconductors
www.vishay.com
5
Suitable Data Format
The circuit of the TSOP344..SB1F is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
Burst length should be 10 cycles/burst or longer.
After each burst which is between 10 cycles and 35
cycles a gap time of at least 14 cycles is necessary.
For each burst which is longer than 0.9 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should be at least 7 times
longer than the burst.
Up to 400 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, R-2000 Code.
When a disturbance signal is applied to the
TSOP344..SB1F it can still receive the data signal.
However the sensitivity is reduced to that level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP344..SB1F are:
DC light (e.g. from tungsten bulb or sunlight)
Continuous signal at 38 kHz or at any other fre-
quency
Signals from fluorescent lamps with electronic bal-
last with high or low modulation
(see Figure 14 or Figure 15).
Figure 13. Directivity
96 12223p2
0.4
0.2
0
0.2
0.4
0.6
0.6
0.9
0
30
10
20
40
50
60
70
80
1.0
0.8
0.7
d
rel
Relative Transmission Distance
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
Figure 15. IR Signal from Fluorescent Lamp with high Modulation
0
5
10
15
20
Time ( ms )
16920
I
R
Si
g
nal
IR Signal from fluorescent
lamp with low modulation
0
5
10
15
20
Time ( ms )
16921
I
R
Si
g
nal
IR Signal from fluorescent
lamp with high modulation
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6
Document Number 82273
Rev. 1.1, 28-Feb-05
TSOP344..SB1F
Vishay Semiconductors
Package Dimensions in mm
16777
TSOP344..SB1F
Document Number 82273
Rev. 1.1, 28-Feb-05
Vishay Semiconductors
www.vishay.com
7
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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