U430/431
Vishay Siliconix
Document Number: 70249
S-04031--Rev. E, 04-Jun-01
www.vishay.com
8-1
Matched N-Channel Pairs
PRODUCT SUMMARY
Part Number
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (mS)
I
G
Typ (pA)
j
V
GS1
V
GS2
j
Typ (mV)
U430
1 to 4
25
10
15
25
U431
2 to 6
25
10
15
25
FEATURES
BENEFITS
APPLICATIONS
D
Two-Chip Design
D
High Slew Rate
D
Low Offset/Drift Voltage
D
Low Gate Leakage: 15 pA
D
Low Noise
D
High CMRR: 75 dB
D
Tight Differential Match vs. Current
D
Improved Op Amp Speed, Settling Time Accuracy
D
Minimum Input Error/Trimming Requirement
D
Insignificant Signal Loss/Error Voltage
D
High System Sensitivity
D
Minimum Error with Large Input Signals
D
Wideband Differential Amps
D
High-Speed, Temp-Compensated,
Single-Ended Input Amps
D
High-Speed Comparators
D
Impedance Converters
DESCRIPTION
The U430/431 are matched JFET pairs assembled in a TO-78
package. These devices offer good power gain even at
frequencies beyond 250 MHz.
The TO-78 package is available with full military processing
(see Military Information).
For similar products, see the low-noise U/SST401 series, the
high-gain 2N5911/5912, and the low-leakage U421/423 data
sheets.
1
TO-78
Top View
D
1
S
1
2
3
7
6
5
G
1
S
2
G
2
D
2
4
Case
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage
25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current
10 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
" from case for 10 sec.)
300
_
C
. . . . . . . . . . . . . . . . . .
Storage Temperature
65 to 200
_
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
55 to 150
_
C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation :
Per Side
a
300 mW
. . . . . . . . . . . . . . . . . . . . . . . .
Total
b
500 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 2.4 mW/
_
C above 25
_
C
b.
Derate 4 mW/
_
C above 25
_
C
U430/431
Vishay Siliconix
www.vishay.com
8-2
Document Number: 70249
S-04031--Rev. E, 04-Jun-01
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
U430
U431
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= 1
m
A, V
DS
= 0 V
35
25
25
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 nA
1
4
2
6
V
Saturation Drain Current
b
I
DSS
V
DS
= 10 V, V
GS
= 0 V
12
30
24
60
mA
V
GS
= 15 V, V
DS
= 0 V
5
150
150
pA
Gate Reverse Current
I
GSS
T
A
= 150
_
C
10
150
150
nA
V
DG
= 10 V, I
D
= 5 mA
15
pA
Gate Operating Current
I
G
T
A
= 150
_
C
10
nA
Gate-Source Forward Voltage
V
GS(F)
I
G
= 10 mA , V
DS
= 0 V
0.8
1
1
V
Dynamic
Common-Source
Forward Transconductance
b
g
fs
15
10
10
mS
Common-Source
Output Conductance
b
g
os
V
DS
= 10 V, I
D
= 10 mA , f = 1 kHz
100
250
250
m
S
Common-Source
Input Capacitance
C
iss
4.5
5
5
Common-Source
Reverse Transfer Capacitance
C
rss
V
GS
= 10 V, V
DS
= 0 V, f = 1 MHz
2
2.5
2.5
pF
Equivalent Input Noise Voltage
e
n
V
DS
= 10 V, I
D
= 10 mA
f = 100 Hz
6
nV
/
Hz
High Frequency
Common-Source
Forward Transconductance
g
fs
14
Common-Source
Output Conductance
g
os
V
DS
= 10 V, I
D
= 10 mA
f = 100 MHz
0.13
mS
Power-Match
Source Admittance
g
ig
12
Matching
Differential
Gate-Source Voltage
|V
GS1
V
GS2
|
V
DG
= 10 V, I
D
= 10 mA
25
mV
Saturation Drain
Current Ratio
c
I
DSS1
I
DSS2
V
DS
= 10 V, V
GS
= 0 V
0.95
0.9
1
0.9
1
Transconductance Ratio
c
g
fs1
g
fs2
V
DS
= 10 V, I
D
= 10 mA, f = 1 kHz
0.95
0.9
1
0.9
1
Gate-Source
Cutoff Voltage Ratio
c
V
GS(off)1
V
GS(off)2
V
DS
= 10 V, I
D
= 1 nA
0.95
0.9
1
0.9
1
Differential Gate Current
|I
G1
I
G2
|
V
DG
= 10 V, I
D
= 5 mA
2
pA
Common Mode Rejection Ratio
CMRR
V
DG
= 5 to 10 V, I
D
= 10 mA
75
dB
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NZBD
b.
Pulse test: PW
v
300
m
s duty cycle
v
3%.
c.
Assumes smaller value in the numerator.
U430/431
Vishay Siliconix
Document Number: 70249
S-04031--Rev. E, 04-Jun-01
www.vishay.com
8-3
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
100
0
5
4
3
1
80
20
0
50
40
10
0
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
V
GS(off)
Gate-Source Cutoff Voltage (V)
V
DG
Drain-Gate Voltage (V)
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
g
fs
I
DSS
60
40
2
30
20
0
4
3
12
15
9
I
GSS
@ 125
_
C
T
A
= 125
_
C
I
G
@ I
D
= 10 mA
10 mA
T
A
= 25
_
C
200
m
A
I
GSS
@ 25
_
C
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
I
D
Drain Current (mA)
V
GS(off)
Gate-Source Cutoff Voltage (V)
T
A
= 55
_
C
125
_
C
V
GS(off)
= 3 V
100
3
5
4
1
80
0
300
240
120
60
0
60
40
20
2
0
180
r
DS
@ I
D
= 1 mA, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V, f = 1 kHz
r
DS
0.1
1
10
20
16
8
4
0
12
g
os
30
0
1.2
1.6
0.4
2
24
12
6
0
0.8
18
Transconductance vs. Gate-Source Voltage
V
GS
Gate-Source Voltage (V)
T
A
= 55
_
C
125
_
C
50
0
1.8
2.4
0.6
3
40
20
10
0
1.2
30
Transconductance vs. Gate-Source Voltage
V
GS
Gate-Source Voltage (V)
T
A
= 55
_
C
25
_
C
125
_
C
200
m
A
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= 3 V
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= 1.5 V
V
DS
= 10 V
f = 1 kHz
25
_
C
25
_
C
I
DS
S
Saturation Drain Current (mA)
g
fs
Forward T
ransconductance (mS)
r
DS
(
on)
Drain-Source On-Resistance (
)
g
fs
Forward T
ransconductance (mS)
g
os
Output Conductance (
S)
g
fs
Forward T
ransconductance (mS)
g
fs
Forward T
ransconductance (mS)
I
G
Gate Leakage
U430/431
Vishay Siliconix
www.vishay.com
8-4
Document Number: 70249
S-04031--Rev. E, 04-Jun-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
V
GS
Gate-Source Voltage (V)
30
0
1.2
0.4
1.6
2
24
12
6
0
18
0.8
T
A
= 55
_
C
125
_
C
Transfer Characteristics
V
GS
Gate-Source Voltage (V)
100
0
1.8
0.6
2.4
3
80
40
20
0
60
1.2
T
A
= 55
_
C
25
_
C
125
_
C
Output Characteristics
V
DS
Drain-Source Voltage (V)
V
GS
= 0 V
0.2 V
0.4 V
0.6 V
0.8 V
1.0 V
20
0
6
8
2
10
16
8
4
0
4
12
V
GS(off)
= 1.5 V
Output Characteristics
V
DS
Drain-Source Voltage (V)
V
GS
= 0 V
0.2 V
0.4 V
0.6 V
0.8 V
15
0
0.4
0.2
0.8
1
12
6
3
0
9
0.6
1.0 V
V
GS(off)
= 1.5 V
Output Characteristics
V
DS
Drain-Source Voltage (V)
V
GS
= 0 V
1.2 V
0.4 V
1.6 V
0.8 V
30
0
0.4
0.2
0.8
1
24
12
6
0
18
0.6
2.0 V
2.4 V
V
GS(off)
= 3 V
Output Characteristics
V
DS
Drain-Source Voltage (V)
50
0
4
2
8
10
40
20
10
0
30
6
2.4 V
V
GS
= 0 V
0.4 V
0.8 V
1.2 V
1.6 V
2.0 V
V
GS(off)
= 3 V
25
_
C
V
GS(off)
= 3 V
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= 1.5 V
V
DS
= 10 V
f = 1 kHz
I
D
Drain Current (mA)
I
D
Drain Current (mA)
I
D
Drain Current (mA)
I
D
Drain Current (mA)
I
D
Drain Current (mA)
I
D
Drain Current (mA)
U430/431
Vishay Siliconix
Document Number: 70249
S-04031--Rev. E, 04-Jun-01
www.vishay.com
8-5
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
1
10
100
100
80
40
20
0
60
V
GS(off)
= 1.5 V
T
A
= 25
_
C
3 V
On-Resistance vs. Drain Current
I
D
Drain Current (mA)
1
10
0.1
100
80
40
20
0
60
I
D
Drain Current (mA)
A
V
+
g
fs
R
L
1
)
R
L
g
os
R
L
+
10 V
I
D
Assume V
DD
= 15 V, V
DS
= 5 V
V
GS(off)
= 1.5 V
3 V
Circuit Voltage Gain vs. Drain Current
15
0
12
16
20
4
12
6
3
0
9
8
Common-Source Input Capacitance
vs. Gate-Source Voltage
V
DS
= 0 V
f = 1 MHz
5 V
V
GS
Gate-Source Voltage (V)
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
10
0
12
20
16
4
8
4
2
0
6
8
V
DS
= 0 V
f = 1 MHz
5 V
V
GS
Gate-Source Voltage (V)
Reverse Feedback Capacitance (pF)
C
rss
100
10
1
0.1
100
1000
(mS)
V
DG
= 10 V
I
D
= 10 mA
CommonGate
g
ig
b
ig
Input Admittance vs. Frequency
f Frequency (MHz)
100
10
1
0.1
100
1000
(mS)
V
DG
= 10 V
I
D
= 10 mA
CommonGate
g
fg
b
fg
Forward Admittance vs. Frequency
f Frequency (MHz)
200
500
200
500
Input Capacitance (pF)
C
iss
r
DS
(
on)
Drain-Source On-Resistance (
)
A
V
V
oltage Gain
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