Vishay General Semiconductor
UG(F,B)18ACT thru UG(F,B)18DCT
Document Number 88759
18-Aug-06
www.vishay.com
1
Dual Common-Cathode Ultrafast Plastic Rectifier
FEATURES
Glass passivated chip junction
Ultrafast recovery time
Low switching losses, high efficiency
Low forward voltage drop
High forward surge capability
Meets MSL level 1, per J-STD-020C, LF max peak
of 245 C (for TO-263AB package)
Solder Dip 260 C, 40 seconds (for TO-220AB &
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, free-wheeling diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
18 A
V
RRM
50 V to 200 V
I
FSM
175 A
t
rr
20 ns
V
F
0.95 V
T
j
max.
150 C
1
2
3
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
UG18xCT Series
ITO-220AB
UGF18xCT Series
UGB18xCT Series
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
PIN 2
PIN 1
PIN 3
TO-263AB
MAXIMUM RATINGS (T
C
= 25 C unless otherwise noted)
PARAMETER
SYMBOL UG18ACT UG18BCT UG18CCT UG18DCT
UNIT
Maximum repetitive peak reverse voltage
V
RRM
50
100
150
200
V
Maximum RMS voltage
V
RMS
35
70
105
140
V
Maximum DC blocking voltage
V
DC
50
100
150
200
V
Maximum average forward rectified current at T
C
= 105 C
I
F(AV)
18 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
175 A
Operating junction and storage temperature range
T
J
, T
STG
- 65 to + 150
C
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 minute
V
AC
1500
V
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Document Number 88759
18-Aug-06
Vishay General Semiconductor
UG(F,B)18ACT thru UG(F,B)18DCT
Note:
(1) Pulse test: 300
s pulse width, 1 % duty cycle
ELECTRICAL CHARACTERISTICS (T
C
= 25 C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL UG18ACT UG18BCT UG18CCT UG18DCT
UNIT
Maximum instantaneous
forward voltage per diode
(1)
at 9.0 A
at 20 A
at 5.0 A
T
j
= 100 C
V
F
1.1
1.2
0.95
V
Maximum DC reverse
current at rated DC
blocking voltage per diode
T
A
= 25 C
T
A
= 100 C
I
R
10
300
A
Maximum reverse
recovery time per diode
at I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
t
rr
20
ns
Maximum reverse
recovery time per diode
at I
F
= 9.0 A, V
R
= 30 V,
di/dt = 50 A/s, I
rr
= 10 % I
RM
T
j
= 25 C
T
j
= 100 C
t
rr
30
50
ns
Maximum stored
charge per diode
I
F
= 9.0 A, V
R
= 30 V,
di/dt = 50 A/s, I
rr
= 10 % I
RM
T
j
= 25 C
T
j
= 100 C
Q
rr
20
45
nC
Typical junction
capacitance per diode
at 4.0 V, 1 MHz
C
J
30
pF
THERMAL CHARACTERISTICS (T
C
= 25 C unless otherwise noted)
PARAMETER
SYMBOL UG18
UGF18
UGB18
UNIT
Typical thermal resistance from junction to case per diode
R
JC
4.0
6.0
4.0
C/W
ORDERING INFORMATION
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
UG18DCT-E3/45
1.85
45
50/Tube
Tube
ITO-220AB
UGF18DCT-E3/45
2.00
45
50/Tube
Tube
TO-263AB
UGB18DCT-E3/45
1.35
45
50/Tube
Tube
TO-263AB
UGB18DCT-E3/81
1.35
81
800/Reel
Tape Reel
Document Number 88759
18-Aug-06
www.vishay.com
3
UG(F,B)18ACT thru UG(F,B)18DCT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 C unless otherwise noted)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0
25
50
75
100
125
150
175
0
4
8
12
16
20
24
A
v
erage
F
or
w
ard
C
u
rrent
(A)
Case Temperature ( C)
Resistive or Inductive Load
1
10
100
10
100
1000
T
C
= 105 C
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
r
w
ard S
u
rge C
u
rrent (A)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneo
u
sF
o
r
w
ard
C
u
rrent
(A)
T
j
= 25 C
Pulse Width = 300 s
1 % Duty Cycle
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 5. Reverse Switching Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
0
20
40
60
80
100
0.01
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s Re
v
erse Leakage
C
u
rrent (
A)
T
j
= 100 C
T
j
= 125 C
T
j
= 25 C
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
Junction Temperature (C)
150 A/s
100 A/s
20 A/s
20 A/s
50 A/s
100 A/s
150 A/s
50 A/s
t
rr
Q
rr
di/dt =
I
F
= 9.0 A
V
R
= 30 V
Stored
Charge/Re
v
erse
Reco
v
ery
T
ime
(nC/ns)
0.1
1
10
100
1
10
100
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
T
j
= 125 C
f = 1.0 MHz
V
sig
= 50 mVp-p
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4
Document Number 88759
18-Aug-06
Vishay General Semiconductor
UG(F,B)18ACT thru UG(F,B)18DCT
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
T O-220AB
1
3
PIN
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.160 (4.06)
0.140 (3.56)
0.635 (16.13)
0.625 (15.87)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.095 (2.41)
0.057 (1.45)
0.045 (1.14)
2
1.148 (29.16)
1.118 (28.40)
0.404 (10.26)
0.384 (9.75)
See note
0.076 Ref.
(1.93) ref.
45 Ref.
0.600 (15.24)
0.580 (14.73)
PIN
1
2
0.560 (14.22)
0.530 (13.46)
0.025 (0.64)
0.015 (0.38)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.671 (17.04)
0.651 (16.54)
0.076Ref.
(1.93)Ref.
See note
7 Ref.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
7 Ref.
0.350 (8.89)
0.330 (8.38)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7 Ref.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
ITO-220AB
Note: Copper exposure is allowablefor 0.005 (0.13) Max. from the body
3
0.080 (2.03)
0.065 (1.65)
0.105 (2.67)
0.095 (2.41)
0.380 (9.65)
0.41
1 (10.45)
0.320 (8.13)
0.360 (9.14)
0.591(15.00)
0.624 (15.85)
1
2
0.245 (6.22)
MIN
K
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.014 (0.36)
0.021 (0.53)
0.110 (2.79)
0.140 (3.56)
0.110 (2.79)
0.090 (2.29)
0.047 (1.19)
0.055 (1.40)
0-0.01 (0-0.254)
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
TO-263AB
0.105 (2.67)
0.08
(0.095) (2.41)
(2.032)
0.42
(10.66)
0.670 (17.02)
0.591 (15.00)
0.15
(3.81)
0.33
(8.38)
Mounting Pad Layout
MIN.
MIN.
MIN.
MIN.
Legal Disclaimer Notice
Vishay
Document Number: 91000
www.vishay.com
Revision: 08-Apr-05
1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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