2N6660, VQ1004J/P
Vishay Siliconix
Document Number: 70222
S-04379--Rev. E, 16-Jul-01
www.vishay.com
11-1
N-Channel 60-V (D-S) Single and Quad MOSFETs
PRODUCT SUMMARY
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max (
W
)
V
GS(th)
(V)
I
D
(A)
2N6660
3 @ V
GS
= 10 V
0.8 to 2
1.1
VQ1004J/P
60
3.5 @ V
GS
= 10 V
0.8 to 2.5
0.46
FEATURES
BENEFITS
APPLICATIONS
D
Low On-Resistance: 1.3
W
D
Low Threshold: 1.7 V
D
Low Input Capacitance: 35 pF
D
Fast Switching Speed: 8 ns
D
Low Input and Output Leakage
D
Low Offset Voltage
D
Low-Voltage Operation
D
Easily Driven Without Buffer
D
High-Speed Circuits
D
Low Error Voltage
D
Direct Logic-Level Interface: TTL/CMOS
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
D
Solid-State Relays
1
2
3
TO-205AD
(TO-39)
Top View
D
G
S
Plastic: VQ1004J
Sidebraze: VQ1004P
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D
1
D
4
S
1
S
4
G
1
G
4
NC
NC
G
2
G
3
S
2
S
3
D
2
D
3
N
N
N
N
2N6660
Device Marking
Top View
VQ1004J
"S" fllxxyy
"S" = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
VQ1004P
"S" fllxxyy
Device Marking
Side View
2N6660
"S" fllxxyy
"S" = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Single
Total Quad
Parameter
Symbol
2N6660
VQ1004J
VQ1004P
VQ1004J/P
Unit
Drain-Source Voltage
V
DS
60
60
60
Gate-Source Voltage
V
GS
"
20
"
30
"
20
V
Continuous Drain Current
T
C
= 25
_
C
1.1
0.46
"
0.46
Continuous Drain Current
(T
J
= 150
_
C)
T
C
= 100
_
C
I
D
0.8
0.26
0.26
A
Pulsed Drain Current
a
I
DM
3
2
2
T
C
= 25
_
C
6.25
1.3
1.3
2
Power Dissipation
T
C
= 100
_
C
P
D
2.5
0.52
0.52
0.8
W
Thermal Resistance, Junction-to-Ambient
b
R
thJA
170
0.96
0.96
62.5
_
Thermal Resistance, Junction-to-Case
R
thJC
20
_
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
_
C
Notes
a.
Pulse width limited by maximum junction temperature.
b.
This parameter not registered with JEDEC.
2N6660, VQ1004J/P
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70222
S-04379--Rev. E, 16-Jul-01
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N6660
VQ1004J/P
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
Drain-Source
Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10
m
A
75
60
60
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
1.7
0.8
2
0.8
2.5
V
V
DS
= 0 V, V
GS
=
"
15 V
"
100
"
100
Gate-Body Leakage
I
GSS
T
C
= 125
_
C
"
500
"
500
nA
V
DS
= 60 V, V
GS
= 0 V
10
V
DS
= 35 V, V
GS
= 0 V
Zero Gate
V
DS
= 48 V, V
GS
= 0 V
1
m
Zero Gate
Voltage Drain Current
I
DSS
T
C
= 125
_
C
500
500
m
A
V
DS
= 28 V, V
GS
= 0 V
T
C
= 125
_
C
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
3
1.5
1.5
A
V
GS
= 5 V, I
D
= 0.3 A
d
2
5
5
Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
=
1
A
1.3
3
3.5
W
T
C
= 125
_
C
d
2.4
4.2
4.9
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.5 A
350
170
170
Common Source
Output Conductance
b
g
os
V
DS
= 10 V, I
D
= 0.1 A
1
mS
Diode Forward Voltage
V
SD
I
S
= 0.99 A, V
GS
= 0 V
0.8
V
Dynamic
Input Capacitance
C
iss
35
50
60
Output Capacitance
C
oss
V
DS
= 24 V, V
GS
= 0 V
25
40
50
Reverse Transfer Capacitance
C
rss
V
DS
= 24 V, V
GS
= 0 V
f = 1 MHz
7
10
10
pF
Drain-Source Capacitance
C
ds
30
40
Switching
c
Turn-On Time
t
ON
V
DD
=
25
V, R
L
= 23
W
^
8
10
10
Turn-Off Time
t
OFF
I
D
^
1 A, V
GEN
= 10 V
R
G
= 25
W
8.5
10
10
ns
Notes
a.
For DESIGN AID ONLY, not subject to production testing.
VNDQ06
b.
Pulse test: PW
v
80
m
s duty cycle
v
1%.
c.
Switching time is essentially independent of operating temperature.
d.
This parameter not registered with JEDEC on 2N6660.
2N6660, VQ1004J/P
Vishay Siliconix
Document Number: 70222
S-04379--Rev. E, 16-Jul-01
www.vishay.com
11-3
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
On-Resistance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
V
GS
Gate-Source Voltage (V)
V
GS
Gate-Source Voltage (V)
V
DS
Drain-to-Source Voltage (V)
V
DS
Drain-to-Source Voltage (V)
I
D
Drain Current (A)
T
J
Junction Temperature (
_
C)
2.0 V
100
0
0.4
0.8
1.2
1.6
2.0
80
60
40
20
0
2.8 V
2.6 V
2.4 V
2.2 V
V
GS
= 10 V
2.0
0
1
2
3
4
5
1.6
1.2
0.8
0.4
0
V
GS
= 10 V
8 V
7 V
6 V
5 V
4 V
3 V
2 V
1.0
0.8
0.6
0
0
2
10
0.4
0.2
4
6
8
125
_
C
25
_
C
V
DS
= 15 V
T
J
= 55
_
C
2.8
0
4
8
12
16
20
2.4
2.0
1.6
0
1.2
0.8
0.4
1.0 A
0.5 A
I
D
= 0.1 A
2.5
2.0
1.5
0
0
0.4
2.0
1.0
0.5
0.8
1.2
1.6
VGS = 10 V
2.25
2.00
1.75
0.50
50
10
150
1.50
1.25
30
70
110
1.00
0.75
V
GS
= 10 V
I
D
= 1.0 A
0.2 A
1.8 V
I
D
Drain Current (A)
I
D
Drain Current (mA)
I
D
Drain Current (A)
r
DS
(
on)
On-Resistance (
)
r
DS
(
on)
Drain-Source On-Resistance (
)
r
DS
(
on)
Drain-Source On-Resistance (
)
(
Normalized)
2N6660, VQ1004J/P
Vishay Siliconix
www.vishay.com
11-4
Document Number: 70222
S-04379--Rev. E, 16-Jul-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Threshold Region
Capacitance
Gate Charge
Load Condition Effects on Switching
Normalized Ef
fective
T
ransient
Thermal Impedance
t
1
Square Wave Pulse Duration (sec)
I
D
Drain Current (A)
V
DS
Drain-to-Source Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Q
g
Total Gate Charge (pC)
10
1
0.01
0.5
0.1
1.0
1.5
2.0
V
DS
= 5 V
25
_
C
55
_
C
125
_
C
T
J
= 150
_
C
C
oss
120
100
80
0
0
10
50
60
40
20
30
40
20
C
iss
C
rss
V
GS
= 0 V
f = 1 MHz
15.0
12.5
10.0
0
0
100
600
7.5
5.0
200
300
400
2.5
500
I
D
= 1.0 A
V
DS
= 30 V
48 V
0.1
1
10
100
10
1
50
20
5
2
V
DD
= 25 V
R
G
= 25
W
V
GS
= 0 to 10 V
t
d(off)
t
r
t
d(on)
t
f
0.1
10 K
1.0
0.01
0.1
1.0
100
10
1 K
Normalized Effective Transient Thermal Impedance, Junction-to-Case (TO-205AD)
1. Duty Cycle, D =
2. Per Unit Base = R
thJC
= 20
_
C/W
3. T
JM
T
C
= P
DM
Z
thJC
(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05
0.01
I
D
Drain Current (mA)
C
Capacitance (pF)
V
GS
Gate-to-Source V
oltage (V)
t
Switching T
ime (ns)
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