1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
EDI8F32512C
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
March 2006
Rev. 9
FEATURES
512Kx32 bit CMOS Static
Random Access Memory
Access Times: 15, 20, and 25ns
Individual
Byte
Selects
Fully Static, No Clocks
TTL
Compatible
I/O
High Density Package
72 Pin ZIP, No. 173
72 lead SIMM, No. 174 (Gold Option)
Common Data Inputs and Outputs
Single +5V (10%) Supply Op er a tion
Note: Consult factory for availability of:
RoHS compliant products
Vendor source control options
Industrial temperature option
DESCRIPTION
The EDI8F32512C is a high speed 16 megabit Static RAM
module organized as 512K words by 32 bits. This module is
constructed from four 512Kx8 Static RAMs in SOJ pack ag es
on an epoxy laminate (FR4) board.
Four chip enables (E-E3) are used to in de pend ently
en able the four bytes. Reading or writing can be ex e cut ed on
individual bytes or any combination of multiple bytes through
proper use of selects.
The EDI8F32512C is offered in 72 pin ZIP and 72 lead SIMM
packages, which enable 16 mega bits of mem o ry to be placed
in less than 1.3 square inches of board space.
All inputs and outputs are TTL compatible and op er ate from
a single 5V supply. Fully asynchronous cir cuit ry re quires no
clocks or refreshing for operation and pro vides equal access
and cycle times for ease of use.
Pins PD1- PD4, are used to identify module memory density in
ap pli ca tions where alternate modules can be in ter changed.
512Kx32 Static RAM CMOS, High Speed Module
Pin Confi gurations and Block Diagram
Pin Names
FIG. 1
NC
PD3
PD0
DQ0
DQ1
DQ2
DQ3
V
CC
A7
A8
A9
DQ4
DQ5
DQ6
DQ7
W#
A14
E0#
E2#
A16
V
SS
DQ16
DQ17
DQ18
DQ19
A10
A11
A12
A13
DQ20
DQ21
DQ22
DQ23
V
SS
NC
NC
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
NC
PD2
V
SS
PD1
DQ8
DQ9
DQ10
DQ11
A0
A1
A2
DQ12
DQ13
DQ14
DQ15
V
SS
A15
E1#
E3#
A17
G#
DQ24
DQ25
DQ26
DQ27
A3
A4
A5
V
CC
A6
DQ28
DQ29
DQ30
DQ31
A18
NC
8G32512C Pin Config.
PD2= V
SS
PD0, PD1, PD3= OPEN
A0-A18
Address Inputs
E0#-E3#
Chip Enables
W#
Write Enable
G#
Output Enable
DQ0-DQ31
Common Data
Input/Output
V
CC
Power (+5V10%)
V
SS
Ground
NC
No Connectiona
8G32512C Blk Dia.
A0-A18
W#
G#
E0#
E1#
E2#
E3#
DQ0-DQ7
DQ8-DQ15
DQ16-DQ23
DQ24-DQ31
512K
X 8
512K
X 8
512K
X 8
512K
X 8
2
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
EDI8F32512C
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
March 2006
Rev. 9
ABSOLUTE MAXIMUM RATINGS*
RECOMMENDED DC OPERATING
CONDITIONS
DC ELECTRICAL CHARACTERISTICS
CAPACITANCE
TRUTH TABLE
(f=1.0MHz, VIN=VCC or VSS)
*Stress greater than those listed under "Ab so lute Maxi mum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional op era tion
of the device at these or any other conditions greater than those in di cated in the
operational sections of this speci fi ca tion is not im plied. Ex po sure to ab so lute maxi mum
rating con di tions for ex tended periods may affect re lia bil ity.
(Note: For TEHQZ,TGHQZ and TWLQZ, CL = 5pF)
*Typical: TA = 25C, VCC = 5.0V
These parameters are sampled, not 100% tested.
Voltage on any pin relative to V
SS
-0.5V to 7.0V
Operating Temperature TA (Ambient)
Commercial
0C to +70C
Industrial
-40C to +85C
Storage Temperature, Plastic
-55C to +125C
Power Dissipation
5.0 Watts
Output Current
20 mA
Parameter
Sym
Min
Typ
Max
Units
Supply Voltage
V
CC
4.5
5.0
5.5
V
Supply Voltage
V
SS
0
0
0
V
Input High Voltage
V
IH
2.2
--
6.0
V
Input Low Voltage
V
IL
-0.3
--
0.8
V
AC TEST CONDITIONS
Input Pulse Levels
V
SS
to 3.0V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
1.5V
Output Load
1TTL, CL = 30pF
Parameter
Sym
Conditions
Min
Typ*
Max
Units
Operating Power Supply Current
I
CC
1
W#, E# = V
IL
, II/O = 0mA, Min Cycle
800
mA
Standby (TTL) Power Supply Current
I
CC
2
E > V
IH
, V
IN
> V
IL
or V
IN
> V
IH
300
mA
Full Standby Power Supply Current
CMOS
I
CC
3
E > V
CC
-0.2V
V
IN
> V
CC
=0.2V or V
IN
> 0.2V
80
mA
Input Leakage Current
I
LI
V
IN
= 0V to V
CC
--
--
20
A
Output Leakage Current
I
LO
V I/O = 0V TO V
CC
--
--
20
A
Output High Voltage
V
OH
I
OH
= -4.0mA
2.4
--
--
V
Output Low Voltage
V
OL
I
OL
= 8.0mA
--
--
0.4
V
E#
W#
G#
Mode
Output
Power
H
X
X
Standby
HIGH Z
I
CC
2/I
CC
3
L
H
L
Read
D
OUT
I
CC
1
L
L
X
Write
D
IN
I
CC
1
L
H
H
Output
Deselect
HIGH Z
I
CC
1
Parameter
Sym
Max
Unit
Address Lines
CI
45
pF
Data Lines
CD/Q
20
pF
Chip Enable Line
CC
20
pF
Write Line
CN
45
pF
3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
EDI8F32512C
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
March 2006
Rev. 9
AC CHARACTERISTICS READ CYCLE
READ CYCLE 2 - W# HIGH
READ CYCLE 1 - W# HIGH, G#, E# LOW
Notes: 1. Parameter guaranteed, but not tested.
FIG. 3
FIG. 2
Parameter
Symbol
15ns
20ns
25ns
Units
JEDEC
Alt.
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
AVAV
TRA
15
20
25
ns
Address Access Time
t
AVQV
TAA
15
20
25
ns
Chip Enable Access
t
ELQV
TACS
15
20
25
ns
Chip Enable to Output in Low Z (1)
t
ELQX
TCLZ
3
3
3
ns
Chip Disable to Output in High Z (1)
t
EHQZ
TCHZ
6
10
12
ns
Output Hold from Address Change
t
AVQX
TOH
3
3
3
ns
Output Enable to Output Valid
t
GLQV
TOE
6
8
10
ns
Output Enable to Output in Low Z (1)
t
GLQX
TOLZ
0
0
0
ns
Output Disable to Output in High (1)
t
GHQZ
TOHZ
620
8
10
ns
E#
A
t
AVAV
t
ELWH
t
AVWH
t
WLWH
t
AVWL
t
WHAX
W#
HIGH Z
DATA VALID
t
WLQZ
t
WHQX
t
DVWH
t
WHDX
Q
D
8F32512C Write Cyc1
t
GHQZ
t
ELQV
t
ELQX
E#
G#
Q
t
EHQZ
A
t
AVAV
t
GLQV
t
GLQX
t
AVQV
8F32512C Rd Cyc2
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
EDI8F32512C
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
March 2006
Rev. 9
AC CHARACTERISTICS WRITE CYCLE
Notes: 1. Parameter guaranteed, but not tested.
Parameter
Symbol
15ns
20ns
25ns
Units
JEDEC
Alt.
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
AVAV
TWC
15
20
25
ns
Chip Enable to End of Write
t
ELWH
t
WLEH
TCW
TCW
8
8
15
15
20
20
ns
ns
Address Setup Time
t
AVWL
t
AVEL
TAS
TAS
0
0
0
0
0
0
ns
ns
Address Valid to End of Write
t
AVWH
t
AHEH
TAW
TAW
8
8
15
15
15
15
ns
ns
Write Pulse Width
t
WLWH
t
ELEH
TWP
TWP
10
10
15
15
15
15
ns
ns
Write Recovery Time
t
WHAX
t
EHAX
TWR
TWR
0
0
0
0
0
0
ns
ns
Data Hold Time
t
WHDX
t
EHDX
TDH
TDH
0
0
0
0
0
0
ns
ns
Write to Output in High Z (1)
t
WLQZ
TWHZ
0
6
0
8
0
12
ns
Data to Write Time
t
DVWH
t
DVEH
TDW
TDW
7
7
9
9
10
10
ns
ns
Output Active from End of Write (1)
t
WHQX
TWLZ
3
3
3
ns
E#
A
t
AVAV
t
ELWH
t
AVWH
t
WLWH
t
AVWL
t
WHAX
W#
HIGH Z
DATA VALID
t
WLQZ
t
WHQX
t
DVWH
t
WHDX
Q
D
8F32512C Write Cyc1
FIG. 4
WRITE CYCLE 1 - W# CONTROLLED
5
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
EDI8F32512C
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
March 2006
Rev. 9
A
t
AVEL
HIGH Z
t
AVAV
8F32512C Write Cyc2
t
ELEH
E#
t
AVEH
t
EHAX
W#
t
WLEH
t
EHDX
t
DVEH
Q
DATA VALID
D
FIG. 5
WRITE CYCLE 2 - E# CONTROLLED
6
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
EDI8F32512C
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
March 2006
Rev. 9
PACKAGE DESCRPTION
PACKAGE NO. 173: 72 PIN ZIP
ORDERING INFORMATION
Part Number
Speed
(ns)
Package
No.
EDI8F32512C15MMC
15
174
EDI8F32512C20MMC
20
174
EDI8F32512C25MMC
25
174
Part Number
Speed
(ns)
Package
No.
EDI8F32512C15MZC
15
173
EDI8F32512C20MZC
20
173
EDI8F32512C25MZC
25
173
NOTES:
Consult Factory for availability of RoHS compliant products. (indicated with "G" at the end of the part number)
Vendor specifi c part numbers are used to provide memory components source control. The place holder for this is shown as lower case "x" in the part numbers above and is to
be replaced with the respective vendors code. Consult factory for qualifi ed sourcing options. (M = Micron, S = Samsung & consult factory for others)
Consult factory for availability of industrial temperature (-40C to 85C) option
To order gold SIMM option, change from "EDI8F" to "EDI8G".
.032
.032
.022
.060
.018
3.865 MAX.
0.600
.100 TYP.
.050 TYP.
.100
TYP.
.273
MAX.
MAX.
MAX.
NOT RECOMMENDED FOR NEW DESIGNS
PACKAGE NO. 174: 72 LEAD SIMM
4.255 MAX.
3.984
1.992
.125 DIA. TYP.
(2 PLCS.)
.213
MAX.
.125
MIN.
.625 MAX.
.400
.250
R.062
3.730
2.045
.050 TYP.
R.062
.250
P1
ALL DIMENSIONS ARE IN INCHES
7
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
EDI8F32512C
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
March 2006
Rev. 9
PART NUMBERING GUIDE
EDI 8 F 32 512 C 20 MM C -G
PREFIX
PRODUCT GROUP
8 = SRAM
SUBSTRATE
F = FR4 with Tin Lead Contacts
G = FR4 with Gold Contacts
DATA BUS WIDTH
32 = 32 Bit
DENSITY
512 = 512K
TECHNOLOGY
C = CMOS (5.0V)
SPEED
15 = 15ns
20 = 20ns
25 = 25ns
PACKAGE
MM = Straight SIMM
MZ = ZIP
TEMPERATURE RANGE
C = Commercial 0C to +70C
I = Industrial
-40C to +85C
G = RoHS COMPLIANT
8
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
EDI8F32512C
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
March 2006
Rev. 9
Document Title
512Kx32 Static Ram CMOS, High Speed Module
Revision History
Rev #
History
Release Date
Status
Rev 9
9.1 Added RoHS compliance option
9.2 Offer vendor source control
9.3 Provide industrial temperature option
9.4 Added part number guide
9.5 Added document title page
March 2006
Final
PDF 
ZIP