1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
EDI8L3265C
64Kx32 SRAM
NOT
RECOMMENDED
FOR
NEW
DESIGN
64Kx32 CMOS High Speed
Static RAM
The EDI8L3265C is a high speed, high performance, four
megabit density Static RAM organized as a 64Kx32 bit
array.
Four Byte Selects, two Chip Enables, Write Control, and
Output Enable provide the user with a flexible memory
solution. The user may independently enable each of the
four bytes, and, with minimal additional peripheral logic,
the unit may be configured as a 128Kx16 array.
Fully asynchronous circuitry is used, requiring no clocks or
refreshing for operation and providing equal access and
cycle times for ease of use.
The EDI8L3265C, allows 2 megabits of memory to be
placed in less than 0.990 square inches of board space.
The EDI8L3265C can be upgraded to 128K, 256K or
512Kx32 in the same footprint using the EDI8L32128,
EDI8L32256 or the EDI8L32512C. (See page 6 for up-
grade paths).
Features
64Kx32 bit CMOS Static
Random Access Memory Array
Fast Access Times: 12*, 15, 20, and 25ns
Individual Byte Selects
User Configurable Organization
with Minimal Additional Logic
Master Output Enable and Write Control
TTL Compatible Inputs and Outputs
Fully Static, No Clocks
Surface Mount Package
68 Lead PLCC, No. 99 (JEDEC-M0-47AE)
Small Footprint, 0.990 Sq. In.
Multiple Ground Pins for Maximum
Noise Immunity
Single +5V (5%) Supply Operation
* Advance Information
Pin Names
A-A15
Address Inputs
E-E1
Chip Enables (one per word)
BS-BS3
Byte Selects (One per Byte)
W
Master Write Enable
G
Master Output Enable
DQ-DQ31
Common Data Input/Output
VCC
Power (+5V5%)
VSS
Ground
NC
No Connection
Pin Configurations and Block Diagram
Notes: 1. See page 6 for upgrade paths.
Note: Solder Reflow temperatures should not exceed 260C for 10 seconds.
March 1997 Rev. 4
ECO #8302
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
EDI8L3265C
64Kx32 SRAM
Absolute Maximum Ratings*
Recommended DC Operating Conditions
Parameter Sym Min Typ Max Units
Supply Voltage VCC 4.75 5.0 5.25 V
Supply Voltage VSS 0 0 0 V
Input High Voltage VIH 2.2 -- VCC+0.5 V
Input Low Voltage VIL -0.3 -- 0.8 V
Voltage on any pin relative to VSS -0.5V to 7.0V
Operating Temperature TA (Ambient)
Commercial 0C to + 70C
Industrial -40C to +85C
Storage Temperature -55C to +125C
Power Dissipation 3.0 Watts
Output Current. 20 mA
Junction Temperature, TJ
175C
AC Test Conditions
(note: For TEHQZ,TGHQZ and TWLQZ, CL = 5pF)
Input Pulse Levels
VSS to 3.0V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
1.5V
Output Load
Figure 1
DC Electrical Characteristics
Capacitance
Truth Table
(f=1.0MHz, VIN=VCC or VSS)
Parameter
Sym
Max
Unit
Address Lines
CA
20
pF
Data Lines
CD/Q
10
pF
Write & Output
W, G
16
pF
Enable Lines
bF
Chip Enable Lines
E, BS
9
pF
These parameters are sampled, not 100% tested.
E W G BS-3 Mode Output Power
H X X
X Standby High Z ICC2,ICC3
L H H X Output Disable High Z ICC1
L X X
H Output Disable High Z ICC1
L H L
L Read Dout ICC1
L L X
L Write Din ICC1
*Typical: TA = 25C, VCC = 5.0V
*Advanced Information
X Means Don't Care
*Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions greater than those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
Parameter
Sym Conditions Min
Max Unit
12ns* 15ns 20/25ns ns
Operating Power ICC1 W= VIL, II/O = 0mA,
500 460 420 mA
Supply Current
Min Cycle
Standby (TTL)
ICC2 E VIH, VIN VIL or
60 60 60 mA
Supply Current
VIN VIH, f=MHz
Full Standby
ICC3 E VCC-0.2V
20 20 20 mA
Supply Current CMOS
VIN VCC-0.2V or VIN 0.2V
Input Leakage Current ILI VIN = 0V to VCC
10 10
10 A
Output Leakage Current ILO V I/O = 0V to VCC
10 10
10 A
Output High Volltage VOH IOH = -4.0mA 2.4
V
Output Low Voltage VOL IOL = 8.0mA
0.4 0.4 0.4 V
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
EDI8L3265C
64Kx32 SRAM
AC Characteristics Read Cycle
Symbol
12ns*
15ns
20ns 25ns
Parameter
JEDEC Alt. Min Max Min Max Min Max Min Max Units
Read Cycle Time
TAVAV TRC
12
15
20
25
ns
Address Access Time TAVQV TAA
12
15
20
25
ns
Chip Enable Access Time TELQV TACS
12
15
20
25
ns
Byte Select Access Time TBLQV TBA
12
15
20
25
ns
Chip Enable to Output in Low Z (1) TELQX TCLZ
3
3
3
3
ns
Byte Select to Output in Low Z TBLQX TBLZ
3
3
3
3
ns
Chip Disable to Output in High Z (1) TEHQZ TCHZ
7
8
10
10
ns
Byte Select to Output in High Z TBHQZ TBHZ
7
8
10
10
ns
Output Hold from Address Change TAVQX TOH
3
3
3
3
ns
Output Enable to Output Valid TGLQV TOE
5
6
8
10
ns
Output Enable to Output in Low Z (1) TGLQX TOLZ
2
2
2
0
ns
Output Disable to Output in High Z(1) TGHQZ TOHZ
4
5
8
10
ns
Read Cycle 2 - W High
Read Cycle 1 - W High, G, E Low
Note 1: Parameter guaranteed, but not tested.
* Advanced Information
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
EDI8L3265C
64Kx32 SRAM
AC Characteristics Write Cycle
Symbol
12ns*
15ns
20ns
25ns
Parameter
JEDEC
Alt. Min Max Min Max Min Max Min Max Units
Write Cycle Time
TAVAV TWC 12
15
20
25
ns
Chip Enable to End of Write
TELWH TCW 8
9
15
20
ns
TELEH TCW 8
9
15
20
ns
Byte Select to end of Write
TBLWH TBW 8
9
15
20
ns
Address Setup Time
TAVWL TAS
0
0
0
0
ns
TAVEL TAS
0
0
0
0
ns
Address Valid to End of Write TAVWH TAW 9
10
15
15
ns
TAVEH TAW 9
10
15
15
ns
Write Pulse Width
TWLWH TWP 9
10
15
15
ns
TWLEH TWP 9
10
15
15
ns
Write Recovery Time
TWHAX TWR 0
0
0
0
ns
TEHAX TWR 0
0
0
0
ns
Data Hold Time
TWHDX TDH
0
0
0
0
ns
TEHDX
TDH
0
0
0
0
ns
Write to Output in High Z (1)
TWLQZ TWHZ 0
5
0
6
0
7
0 10
ns
Data to Write Time
TDVWH TDW 5
6
8
12
ns
TDVEH TDW 5
6
8
12
ns
Output Active from End of Write (1)
TWHQX TWLZ 2
2
2
2
ns
Note 1: Parameter guaranteed, but not tested.
* Advanced Information
Write Cycle 1 - W Controlled
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
EDI8L3265C
64Kx32 SRAM
NOT
RECOMMENDED
FOR
NEW
DESIGN
Write Cycle 2 - E Controlled
Part Number
Speed Package
(ns)
No.
EDI8L3265C12AC*
12
99
EDI8L3265C15AC
15
99
EDI8L3265C20AC
20
99
EDI8L3265C25AC
25
99
Ordering Information
BSx,
Package Description
Package No. 99
68 Lead PLCC
JEDEC M0-47AE
*Advanced Information
Part Number
Speed Package
(ns)
No.
EDI8L3265C15AI
15
99
EDI8L3265C20AI
20
99
EDI8L3265C25AI
25
99
Commercial (0C to 70C)
Industrial (-40C to +85C)
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
EDI8L3265C
64Kx32 SRAM
EDI MCM-L Upgrade Path
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