1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
June 2004
Rev 2
PRELIMINARY*
W3DG7216V-AD1
128MB - 16Mx72 SDRAM, UNBUFFERED
DESCRIPTION
The W3DG7216V is a 16Mx72 synchronous DRAM
module which consists of nine 16Meg x 8 SDRAM
components in TSOP II package, and one 2Kb EEPROM
in an 8 pin TSSOP package for Serial Presence Detect
which are mounted on a 144 pin SO-DIMM multilayer
FR4 Substrate.
* This product is under development, is not qualifi ed or characterized
and is subject to change without notice.
FEATURES
PC100 and PC133 compatible
Burst
Mode
Operation
Auto and Self Refresh capability
LVTTL compatible inputs and outputs
Serial Presence Detect with EEPROM
Fully synchronous: All signals are registered on the
positive edge of the system clock
Programmable Burst Lengths: 1, 2, 4, 8 or Full
Page
3.3V 0.3V Power Supply
144 Pin SO-DIMM JEDEC
Package height options:
AD1: 27.94 (1.10")
PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)
A0 A12
Address Input (Multiplexed)
BA0-BA1
Select Bank
DQ0-63
Data Input/Output
CLK0
Clock Input
CB0-7
Check Bit (Data-In/Data-Out)
CKE0
Clock Enable Input
CS0#
Chip Select Input
RAS#
Row Address Strobe
CAS#
Column Address Strobe
WE#
#Write Enable
DQM0-7
DQM
V
CC
Power Supply (3.3V)
V
SS
Ground
SDA
Serial Data I/O
SCL
Serial Clock
DNU
Do Not Use
NC
No Connect
PINOUT
PIN
FRONT
PIN
BACK
PIN
FRONT
PIN
BACK
PIN
FRONT
PIN
BACK
1
V
SS
2
V
SS
49
DQ13
50
DQ45
97
DQ22
98
DQ54
3
DQ0
4
DQ32
51
DQ14
52
DQ46
99
DQ23
100
DQ55
5
DQ1
6
DQ33
53
DQ15
54
DQ47
101
V
CC
102
V
CC
7
DQ2
8
DQ34
55
V
SS
56
V
SS
103
A6
104
A7
9
DQ3
10
DQ35
57
CB0
58
CB4
105
A8
106
BA0
11
V
CC
12
V
CC
59
CB1
60
CB5
107
V
SS
108
V
SS
13
DQ4
14
DQ36
61
CLK0
62
CKE0
109
A9
110
BA1
15
DQ5
16
DQ37
63
V
CC
64
V
CC
111
A10
112
A11
17
DQ6
18
DQ38
65
RAS#
66
CAS#
113
V
CC
114
V
CC
19
DQ7
20
DQ39
67
WE#
68
CKE1
115
DQMB2
116
DQMB6
21
V
SS
22
V
SS
69
SO#
70
A12
117
DQMB3
118
DQMB7
23
DQMB0
24
DQMB4
71
S1#
72
NC
119
V
SS
120
V
SS
25
DQMB1
26
DQMB5
73
NC
74
NC
121
DQ24
122
DQ56
27
V
CC
28
V
CC
75
V
SS
76
V
SS
123
DQ25
124
DQ57
29
A0
30
A3
77
CB2
78
CB6
125
DQ26
126
DQ58
31
A1
32
A4
79
CB3
80
CB7
127
DQ27
128
DQ59
33
A2
34
A5
81
V
CC
82
V
CC
129
V
CC
130
V
CC
35
V
SS
36
V
SS
83
DQ16
84
DQ48
131
DQ28
132
DQ60
37
DQ8
38
DQ40
85
DQ17
86
DQ49
133
DQ29
134
DQ61
39
DQ9
40
DQ41
87
DQ18
88
DQ50
135
DQ30
136
DQ62
41
DQ10
42
DQ42
89
DQ19
90
DQ51
137
DQ31
138
DQ63
43
DQ11
44
DQ43
91
V
SS
92
V
SS
139
V
SS
140
V
SS
45
V
CC
46
V
CC
93
DQ20
94
DQ52
141
SDA
142
SCL
47
DQ12
48
DQ44
95
DQ21
96
DQ53
143
V
CC
144
V
CC
PIN NAMES
W3DG7216V-AD1
2
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
June 2004
Rev 2
PRELIMINARY
FUNCTIONAL BLOCK DIAGRAM
DQMB0
WE#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
D0
DQM
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
DQ8
D1
DQ23
DQ22
DQ21
DQ20
DQ19
DQ18
DQ17
DQ16
D2
D3
DQ31
DQ30
DQ29
DQ28
DQ27
DQ26
DQ25
DQ24
D4
DQ62
DQ63
DQ61
DQ60
DQ59
DQ58
DQ57
DQ56
D8
DQ47
DQ51
DQ55
DQ54
DQ53
DQ52
DQ49
DQ50
DQ48
DQ43
DQ45
DQ46
DQ44
DQ41
DQ42
DQ40
DQ39
DQ37
DQ38
DQ35
DQ36
DQ33
DQ34
DQ32
D5
D7
D6
S0#
DQMB1
DQMB2
DQMB3
DQMB7
DQMB6
DQMB5
DQMB4
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 3
I/O 7
I/O 6
I/O 5
I/O 4
I/O 2
I/O 1
I/O 0
I/O 3
I/O 7
I/O 6
I/O 5
I/O 4
I/O 2
I/O 1
I/O 0
I/O 3
I/O 7
I/O 6
I/O 5
I/O 4
I/O 2
I/O 1
I/O 0
I/O 3
I/O 7
I/O 6
I/O 5
I/O 4
I/O 2
I/O 1
I/O 0
I/O 3
I/O 7
I/O 6
I/O 5
I/O 4
I/O 2
I/O 1
I/O 0
I/O 7
I/O 0
I/O 1
I/O 2
I/O 4
I/O 5
I/O 6
I/O 3
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 0
I/O 1
I/O 2
I/O 0
I/O 1
I/O 2
I/O 4
I/O 5
I/O 6
I/O 7
I/O 3
CB3
CB6
CB7
CB4
CB5
CB1
CB2
CB0
S0#
WE#
DQM
DQM
DQM
DQM
S0#
WE#
S0#
WE#
S0#
WE#
S0#
WE#
S0#
WE#
S0#
WE#
S0#
WE#
S0#
WE#
DQM
DQM
DQM
DQM
NOTE: DQ wiring may differ than described in this drawing,
however DQ/DQMB/CKE/S relationships must be
maintianed as shown.
A0
A2
A1
SDA
SCL
SERIAL PD
RAS#
RAS#:
CKE:
CAS#:
CAS#
CKEO
SDRAM DO-D8
SDRAM DO-D8
SDRAM DO-D8
CLOCK
INPUT
SDRAMS
*CLK0
*CLK1
4 0R 5 SDRAMS
4 0R 5 SDRAMS
*CLOCK WIRING
BA0-BA1
A0-A11
BA0-BA1:SDRAM D0-8
A0-A11: SDRAM D0-D8
D0-D8
D0-D8
V
SS
V
CC
W3DG7216V-AD1
3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
June 2004
Rev 2
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
Voltage on any pin relative to V
SS
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
CC
supply relative to V
SS
V
CC
, V
CCQ
-1.0 ~ 4.6
V
Storage Temperature
T
STG
-55 ~ +150
C
Power Dissipation
P
D
9 W
Short Circuit Current
I
OS
50
mA
Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
CAPACITANCE
T
A
= 25C, f = 1MHz, V
CC
= 3.3V, V
REF
= 1.4V 200mV
Parameter
Symbol
Max
Unit
Input Capacitance (A0-A11)
C
IN1
40
pF
Input Capacitance (RAS#,CAS#,WE#)
C
IN2
40
pF
Input Capacitance (CKE0)
C
IN3
40
pF
Input Capacitance (CLK0)
C
IN4
20
pF
Input Capacitance (CS0#)
C
IN5
40
pF
Input Capacitance (DQM0-DQM7)
C
IN6
7
pF
Input Capacitance (BA0-BA1)
C
IN7
40
pF
Data Input/Output Capacitance (DQ0-DQ63)
C
OUT
10
pF
Data Input/Output Capacitance (CB0-7)
C
OUT1
10
pF
RECOMMENDED DC OPERATING CONDITIONS
Voltage Referenced to: V
SS
= 0V, 0C
T
A
+70C
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply Voltage
V
CC
3.0
3.3 3.6
V
Input High Voltage
V
IH
2.0
3.0
V
CCQ
+0.3
V
1
Input Low Voltage
V
IL
-0.3
--
0.8
V
2
Output High Voltage
V
OH
2.4
--
--
V
I
OH
= -2mA
Output Low Voltage
V
OL
--
--
0.4
V
I
OL
= -2mA
Input Leakage Current
I
LI
-10
--
10
A
3
Note:
1. V
IH
(max)= 5.6V AC. The overshoot voltage duration is 3ns.
2. V
IL
(min)= -2.0V AC. The undershoot voltage duration is 3ns.
3. Any input 0V V
IN
V
CCQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
W3DG7216V-AD1
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
June 2004
Rev 2
PRELIMINARY
OPERATING CURRENT CHARACTERISTICS
V
CC
= 3.3V, 0C T
A
+70C
Version
Parameter
Symbol
Conditions
133/100
Units
Note
Operating Current
(One bank active)
I
CC1
Burst Length = 1
t
RC
t
RC
(min)
I
OL
= 0mA
1440
mA
1
Precharge Standby Current
in Power Down Mode
I
CC2
CKE
V
IL
(max), t
CC
= 10ns
18
mA
Active Standby Current in
Non-Power Down Mode
I
CC3
CKE
V
IH
(min), CS
V
IH
(min), tcc = 10ns Input
signals are changed one time during 20ns
450
mA
Operating Current (Burst mode)
I
CC4
Io = mA
Page burst
4 Banks activated
t
CCD
= 2CK
1485
mA
1
Refresh Current
I
CC5
t
RC
t
RC
(min)
2970
mA
2
Self Refresh Current
I
CC6
CKE
0.2V
27
mA
Notes:
1. Measured with outputs open.
2. Refresh period is 64ms.
W3DG7216V-AD1
5
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
June 2004
Rev 2
PRELIMINARY
Note: For industrial temperature range product, add an "I" to the end of the part number.
Ordering Information
Speed
CAS Latency
Height*
W3DG7216V10AD1
100MHz
CL=2
27.94 (1.10")
W3DG7216V7AD1
133MHz
CL=2
27.94 (1.10")
W3DG7216V75AD1
133MHz
CL=3
27.94 (1.10")
PACKAGE DIMENSIONS FOR AD1
3.99
(0.157)
2.01 (0.079 Min)
67.72
(2.661 Max)
32.79
(1.291)
4.60 (0.181)
1.50 (0.059)
28.2
(1.112)
23.14
(0.913)
19.99
(0.787)
27.94
(1.10)
Max
3.81
(0.150)
MAX.
0.99
(0.039)
( 0.004)
300
WEDC
PACKAGE DIMENSIONS FOR AD1
* ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES).
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