White Electronic Designs Corporation (508) 485-4000 www.whiteedc.com

June 2003 Rev. 1

ECO #16361

WED3DG6433V-D2

White Electronic Designs Corp reserves the right to change products or specifications without notice.

256MB- 32Mx64 SDRAM UNBUFFERED

n PC100 and PC133 compatible
n Burst Mode Operation
n Auto and Self Refresh capability
n LVTTL compatible inputs and outputs
n Serial Presence Detect with EEPROM
n Fully synchronous: All signals are registered on the positive

edge of the system clock

n Programmable Burst Lengths: 1, 2, 4, 8 or Full Page
n 3.3 volt 6 0.3v Power Supply
n 168- Pin DIMM JEDEC

The WED3DG6433V is a 32Mx64 synchronous DRAM module

which consists of four 32Mx16 SDRAM components in TSOP- 11

package and one 2K EEPROM in an 8- pin TSSOP package for

Serial Presence Detect which are mounted on a 168 Pin DIMM

multilayer FR4 Substrate.

DESCRIPTION

FEATURES

PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)

PIN NAMES

* WP (write protect) option is available on

Pin 81, see ordering information on page 5.

** These pins should be NC in the system which

does not support SPD.

A0 A12

Address input (Multiplexed)

BA0-1

Select Bank

DQ0-63

Data Input/Output

CLK0,CLK2

Clock input

CKE0

Clock Enable input

CS0,CS2

Chip select Input

RAS

Row Address Strobe

CAS

Column Address Strobe

Write Enable

DQM0-7

DQM

VDD

Power Supply (3.3V)

VSS

Ground

SDA

Serial data I/O

SCL

Serial clock

DNU

Do not use

No Connect

Front

Back

VSS

DQM1

DQ18

VSS

113

DQM5

141

DQ50

DQ0

CS0

DQ19

DQ32

114

CS1

142

DQ51

DQ1

DNU

VDD

DQ33

115

RAS

143

VDD

DQ2

VSS

DQ20

DQ34

116

VSS

144

DQ52

DQ3

DQ35

117

145

VDD

VCC

118

146

DQ4

DQ36

119

147

DNU

DQ5

VSS

DQ37

120

148

VSS

DQ6

DQ21

DQ38

121

149

DQ53

DQ7

A10/AP

DQ22

DQ39

122

BA0

150

DQ54

DQ8

BA1

DQ23

DQ40

123

A11

151

DQ55

VSS

VDD

VSS

124

VDD

152

VSS

DQ9

VDD

DQ24

DQ41

125

153

DQ56

DQ10

CLK0

DQ25

DQ42

126

A12

154

DQ57

DQ11

VSS

DQ26

DQ43

127

VSS

155

DQ58

DQ12

DNU

DQ27

100

DQ44

128

CKE0

156

DQ59

DQ13

CS2

VDD

101

DQ45

129

157

VDD

DQM2

DQ28

102

VDD

130

DQM6

158

DQ60

DQ14

DQM3

DQ29

103

DQ46

131

DQM7

159

DQ61

DQ15

DNU

DQ30

104

DQ47

132

160

DQ62

VDD

DQ31

105

133

VDD

161

DQ63

VSS

106

134

162

VSS

CLK2

107

VSS

135

163

108

136

164

*WP

109

137

165

**SA0

VDD

VSS

**SDA

110

VDD

138

VSS

166

**SA1

DQ16

**SCL

111

CAS

139

DQ48

167

**SA2

DQM0

DQ17

VDD

112

DQM4

140

DQ49

168

VDD

White Electronic Designs Corporation (508) 485-4000 www.whiteedc.com

June 2003 Rev. 1

ECO #16361

WED3DG6433V-D2

White Electronic Designs Corp reserves the right to change products or specifications without notice.

(Voltage Referenced to: V

= 0V, T

= 0�C to +70�C)

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Units

Voltage on any pin relative to VSS

, Vout

-1.0 ~ 4.6

Voltage on VDD supply relative to VSS

VDD, VDDQ

-1.0 ~ 4.6

Storage Temperature

TSTG

-55 ~ +150 �C

Power Dissipation

Short Circuit Current

IOS

Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

RECOMMENDED DC OPERATING CONDITIONS

Parameter

Symbol

Min

Typ

Max

Unit

Note

Supply Voltage

VDD

3.0

3.3

3.6

Input High Voltage

VIH

2.0

3.0 VDDQ+0.3 V

Input Low Voltage

VIL

-0.3

0.8

Output High Voltage

VOH

2.4

IOH= -2mA

Output Low Voltage

VOL

0.4

IOL= -2mA

Input Leakage Current

ILI

-10

�A

Note: 1. VIH (max)= 5.6V AC. The overshoot voltage duration is � 3ns.

2. VIL (min)= -2.0V AC. The undershoot voltage duration is � 3ns.

3. Any input 0V � VIN � VDDQ

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State

outputs.

CAPACITANCE

= 23�C, f = 1MHz, V

= 3.3V, VREF=1.4V 6200mV)

Parameter

Symbol

Min

Max

Unit

Input Capacitance (A0-A12)

CIN1

Input Capacitance (RAS,CAS,WE)

CIN2

Input Capacitance (CKE0)

CIN3

Input Capacitance (CLK0,CLK2)

CIN4

Input Capacitance (CS0,CS2)

CIN5

Input Capacitance (DQM0-DQM7)

CIN6

Input Capacitance (BA0-BA1)

CIN7

Data input/output capacitance (DQ0-DQ63)

Cout

White Electronic Designs Corporation (508) 485-4000 www.whiteedc.com

June 2003 Rev. 1

ECO #16361

WED3DG6433V-D2

White Electronic Designs Corp reserves the right to change products or specifications without notice.

OPERATING CURRENT CHARACTERISTICS

= 3.3V, T

= 0�C to +70�C)

Notes: 1. Measured with outputs open.

2. Refresh period is 64ms.

3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VDDQ/VssQ)

Version

Parameter

Symbol

Conditions

133

100

Units Note

Operating Current

ICC1

Burst Length = 1

600

560

(One bank active)

tRC � tRC(min)

IOL = 0mA

Precharge Standby Current

ICC2P

CKE � VIL(max), tCC = 10ns

in Power Down Mode

ICC2PS

CKE & CLK � VIL(max), tCC = �

Icc2N

CKE � VIH(min), CS � VIH(min), tcc = 10ns

Precharge Standby Current

Input signals are charged one time during 20

in Non-Power Down Mode

Icc2NS

CKE � VIH(min), CLK � VIL(max), tcc = �

Input signals are stable

Active standby current in

ICC3P

CKE � VIL(max), tCC = 10ns

power-down mode

ICC3PS

CKE & CLK � VIL(max), tcc = �

ICC3N

CKE � VIH(min), CS � VIH(min), tcc = 10ns

Active standby current in

Input signals are changed one time during 20ns 140

non power-down mode

ICC3NS

CKE � VIH(min), CLK � VIL(max), tcc = �

input signals are stable

120

Io = mA

Operating current (Burst mode)

ICC4

Page burst

720

580

4 Banks activated

tCCD = 2CLK

Refresh current

ICC5

tRC � tRC(min)

840

800

Self refresh current

ICC6

CKE � 0.2V

Электронный компонент: WED3DG6433V