White Electronic Designs Corporation (508) 485-4000 www.whiteedc.com

June 2003 Rev. 1

ECO #16372

WED3DG647V-D1

White Electronic Designs Corp reserves the right to change products or specifications without notice.

64MB- 8Mx64 SDRAM UNBUFFERED

n PC100 and PC133 compatible
n Burst Mode Operation
n Auto and Self Refresh capability
n LVTTL compatible inputs and outputs
n Serial Presence Detect with EEPROM
n Fully synchronous: All signals are registered on the positive

edge of the system clock

n Programmable Burst Lengths: 1, 2, 4, 8 or Full Page
n 3.3 volt 6 0.3v Power Supply
n 144- Pin SO-DIMM JEDEC

The WED3DG647V is a 8Mx64 synchronous DRAM module

which consists of eight 8Mx8 SDRAM components in TSOP- 11

package, and one 2K EEPROM in an 8- pin TSSOP package for

Serial Presence Detect which are mounted on a 144 Pin SO-

DIMM multilayer FR4 Substrate.

DESCRIPTION

FEATURES

PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)

PIN NAMES

** These pins should be NC in the system which

does not support SPD.

A0 A11

Address input (Multiplexed)

BA0-1

Select Bank

DQ0-63

Data Input/Output

CLK0,CLK1

Clock input

CKE0

Clock Enable input

CS0

Chip select Input

RAS

Row Address Strobe

CAS

Column Address Strobe

Write Enable

DQM0-7

DQM

VDD

Power Supply (3.3V)

VSS

Ground

SDA

Serial data I/O

SCL

Serial clock

DNU

Do not use

No Connect

Front

Back

Front

Back

Front

Back

VSS

DQ14

DQ46

DQ21

DQ53

DQ0

DQ32

DQ15

DQ47

DQ22

DQ54

DQ1

DQ33

VSS

DQ23

100

DQ55

DQ2

DQ34

101

VDD

102

VDD

DQ3

DQ35

103

104

VDD

105

106

BA0

DQ4

DQ36

107

VSS

108

VSS

DQ5

DQ37

109

110

BA1

DQ6

DQ38

CLK0

CKE0

111

A10/AP

112

A11

DQ7

DQ39

VDD

113

VDD

114

VDD

VSS

RAS

CAS

115

DQM2

116

DQM6

DQM0

DQM4

117

DQM3

118

DQM7

DQM1

DQM5

CS0

119

VSS

120

VSS

VDD

121

DQ24

122

DQ56

DNU

CLK1

123

DQ25

124

DQ57

VSS

125

DQ26

126

DQ58

127

DQ27

128

DQ59

VSS

129

VDD

130

VDD

DQ8

DQ40

VDD

131

DQ28

132

DQ60

DQ9

DQ41

DQ16

DQ48

133

DQ29

134

DQ61

DQ10

DQ42

DQ17

DQ49

135

DQ30

136

DQ62

DQ11

DQ43

DQ18

DQ50

137

DQ31

138

DQ63

VDD

DQ19

DQ51

139

VSS

140

VSS

DQ12

DQ44

VSS

141

**SDA

142

**SCL

DQ13

DQ45

DQ20

DQ52

143

VDD

144

VDD

VOLTAGE KEY

White Electronic Designs Corporation (508) 485-4000 www.whiteedc.com

June 2003 Rev. 1

ECO #16372

WED3DG647V-D1

White Electronic Designs Corp reserves the right to change products or specifications without notice.

(Voltage Referenced to: V

= 0V, T

= 0�C to +70�C)

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Units

Voltage on any pin relative to VSS

, Vout

-1.0 ~ 4.6

Voltage on VDD supply relative to VSS

VDD, VDDQ

-1.0 ~ 4.6

Storage Temperature

TSTG

-55 ~ +150 �C

Power Dissipation

Short Circuit Current

IOS

Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

RECOMMENDED DC OPERATING CONDITIONS

Parameter

Symbol

Min

Typ

Max

Unit

Note

Supply Voltage

VDD

3.0

3.3

3.6

Input High Voltage

VIH

2.0

3.0 VDDQ+0.3 V

Input Low Voltage

VIL

-0.3

0.8

Output High Voltage

VOH

2.4

IOH= -2mA

Output Low Voltage

VOL

0.4

IOL= -2mA

Input Leakage Current

ILI

-10

�A

Note: 1. VIH (max)= 5.6V AC. The overshoot voltage duration is � 3ns.

2. VIL (min)= -2.0V AC. The undershoot voltage duration is � 3ns.

3. Any input 0V � VIN � VDDQ

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State

outputs.

CAPACITANCE

= 23�C, f = 1MHz, V

= 3.3V, VREF=1.4V 6200mV)

Parameter

Symbol

Min

Max

Unit

Input Capacitance (A0-A12)

CIN1

Input Capacitance (RAS,CAS,WE)

CIN2

Input Capacitance (CKE0)

CIN3

Input Capacitance (CLK0,CLK1)

CIN4

Input Capacitance (CS0)

CIN5

Input Capacitance (DQM0-DQM7)

CIN6

Input Capacitance (BA0-BA1)

CIN7

Data input/output capacitance (DQ0-DQ63)

Cout

White Electronic Designs Corporation (508) 485-4000 www.whiteedc.com

June 2003 Rev. 1

ECO #16372

WED3DG647V-D1

White Electronic Designs Corp reserves the right to change products or specifications without notice.

OPERATING CURRENT CHARACTERISTICS

= 3.3V, T

= 0�C to +70�C)

Notes: 1. Measured with outputs open.

2. Refresh period is 64ms.

3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VDDQ/VssQ)

Version

Parameter

Symbol

Conditions

133

100

Units Note

Operating Current

ICC1

Burst Length = 1

300

280

(One bank active)

tRC � tRC(min)

IOL = 0mA

Precharge Standby Current

ICC2P

CKE � VIL(max), tCC = 10ns

in Power Down Mode

ICC2PS

CKE & CLK � VIL(max), tCC = �

Icc2N

CKE � VIH(min), CS � VIH(min), tcc = 10ns

Precharge Standby Current

Input signals are charged one time during 20

in Non-Power Down Mode

Icc2NS

CKE � VIH(min), CLK � VIL(max), tcc = �

Input signals are stable

Active standby current in

ICC3P

CKE � VIL(max), tCC = 10ns

power-down mode

ICC3PS

CKE & CLK � VIL(max), tcc = �

ICC3N

CKE � VIH(min), CS � VIH(min), tcc = 10ns

Active standby current in

Input signals are changed one time during 20ns 120

non power-down mode

ICC3NS

CKE � VIH(min), CLK � VIL(max), tcc = �

input signals are stable

100

Io = mA

Operating current (Burst mode)

ICC4

Page burst

460

380

4 Banks activated

tCCD = 2CLK

Refresh current

ICC5

tRC � tRC(min)

540

500

Self refresh current

ICC6

CKE � 0.2V

Электронный компонент: WED3DG647V-D1