June 2003
Rev. 1
WED3DG649V-D2
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
64MB- 8M x 64 SDRAM UNBUFFERED
PC100 and PC133 compatible
Burst
Mode
Operation
Auto and Self Refresh capability
LVTTL compatible inputs and outputs
Serial Presence Detect with EEPROM
Fully synchronous: All signals are registered on the positive
edge of the system clock
Programmable Burst Lengths: 1, 2, 4, 8 or Full Page
3.3V
0.3v Power Supply
168 pin DIMM JEDEC
The WED3DG649V is a 8M x 64 synchronous DRAM
module which consists of four 8M x 16 SDRAM
components in TSOP II package and one 2K EEPROM
in an 8 pin TSSOP package for Serial Presence Detect
which are mounted on a 168 pin DIMM multilayer FR4
Substrate.
* This product is under development, is not qualifi ed or characterized and is subject to
change or cancellation without notice.
DESCRIPTION
FEATURES
PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)
PIN NAMES
* WP (write protect) option available on pin 81,
see ordering information on page 5.
** These pins should be NC in the system which
does not support SPD.
A0 A11
Address input (Multiplexed)
BA0-1
Select Bank
DQ0-63
Data Input/Output
CK0,CK2
Clock input
CKE0
Clock Enable input
CS0#,CS2# Chip
select
Input
RAS#
Row Address Strobe
CAS#
Column Address Strobe
WE#
Write Enable
DQM0-7#
DQM
V
CC
Power Supply (3.3V)
V
SS
Ground
SDA
Serial data I/O
SCL
Serial clock
DNU
Do not use
NC
No Connect
Pin
Front
Pin
Front
Pin
Front
Pin
Back
Pin
Back
Pin
Back
1
V
SS
29
DQM1
57
DQ18
85
V
SS
113
DQM5
141
DQ50
2
DQ0
30
CS0#
58
DQ19
86
DQ32
114
CS1#
142
DQ51
3
DQ1
31
DNU
59
V
CC
87
DQ33
115
RAS#
143
V
CC
4
DQ2
32
V
SS
60
DQ20
88
DQ34
116
V
SS
144
DQ52
5
DQ3
33
A0
61
NC
89
DQ35
117
A1
145
NC
6
V
CC
34
A2
62
NC
90
V
CC
118
A3
146
NC
7
DQ4
35
A4
63
NC
91
DQ36
119
A5
147
DNU
8
DQ5
36
A6
64
V
SS
92
DQ37
120
A7
148
V
SS
9
DQ6
37
A8
65
DQ21
93
DQ38
121
A9
149
DQ53
10
DQ7
38
A10/AP
66
DQ22
94
DQ39
122
BA0
150
DQ54
11
DQ8
39
BA1
67
DQ23
95
DQ40
123
A11
151
DQ55
12
V
SS
40
V
CC
68
V
SS
96
V
SS
124
V
CC
152
V
SS
13
DQ9
41
V
CC
69
DQ24
97
DQ41
125
NC
153
DQ56
14
DQ10
42
CK0
70
DQ25
98
DQ42
126
NC
154
DQ57
15
DQ11
43
V
SS
71
DQ26
99
DQ43
127
V
SS
155
DQ58
16
DQ12
44
DNU
72
DQ27
100
DQ44
128
CKE0
156
DQ59
17
DQ13
45
CS2#
73
V
CC
101
DQ45
129
NC
157
V
CC
18
V
CC
46
DQM2
74
DQ28
102
V
CC
130
DQM6
158
DQ60
19
DQ14
47
DQM3
75
DQ29
103
DQ46
131
DQM7
159
DQ61
20
DQ15
48
DNU
76
DQ30
104
DQ47
132
NC
160
DQ62
21
NC
49
V
CC
77
DQ31
105
NC
133
V
CC
161
DQ63
22
NC
50
NC
78
V
SS
106
NC
134
NC
162
V
SS
23
V
SS
51
NC
79
CK2
107
V
SS
135
NC
163
NC
24
NC
52
NC
80
NC
108
NC
136
NC
164
NC
25
NC
53
NC
81
*WP
109
NC
137
NC
165
**SA0
26
V
CC
54
V
SS
82
**SDA
110
V
CC
138
V
SS
166
**SA1
27
WE#
55
DQ16
83
**SCL
111
CAS#
139
DQ48
167
**SA2
28
DQM0
56
DQ17
84
V
CC
112
DQM4
140
DQ49
168
V
CC
June 2003
Rev. 1
WED3DG649V-D2
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
FUNCTIONAL BLOCK DIAGRAM
CS#
LDQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
UDQM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
U2
DQM4
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
U0
U1
U3
DQM5
CS#
LDQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
UDQM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQM6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DQM7
CS#
LDQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
UDQM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQM3
CS#
LDQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
UDQM
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQM0
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQM1
CSO#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CS2#
DQM2
SDRAM
SDRAM
SDRAM
SDRAM
SDRAM
U0U3
U0U3
U0U3
U0U3
U0U3
A0An,BA0 &1
RAS#
CAS#
WE#
CKE0
DQn
10
Every DQpin of SDRAM
V
CC
V
CC
To all SDRAMS
TWO 0.1 uF CAPACITORS
PER EACH SDRAM
CK0/2
10
U0/U2
U1/U3
15pF
CK1/3
10
10pF
SERIAL PD
SCL
SDA
WP
A0
SA0
SA1
SA2
A1
A2
47
June 2003
Rev. 1
WED3DG649V-D2
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
Absolute Maximum Ratings
Parameter
Symbol
Value
Units
Voltage on any pin relative to V
SS
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
CC
supply relative to V
SS
V
CC
, V
CCQ
-1.0 ~ 4.6
V
Storage Temperature
T
STG
-55 ~ +150
C
Power Dissipation
P
D
4
W
Short Circuit Current
I
OS
50
mA
Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
(Voltage Referenced to: V
SS
= 0V, 0C
T
A
70C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply Voltage
V
CC
3.0
3.3 3.6
V
Input High Voltage
V
IH
2.0
3.0
V
CCQ
+0.3
V
1
Input Low Voltage
V
IL
-0.3
--
0.8
V
2
Output High Voltage
V
OH
2.4
--
--
V
I
OH
= -2mA
Output Low Voltage
V
OL
--
--
0.4
V
I
OL
= -2mA
Input Leakage Current
I
LI
-10
--
10
A
3
Note: 1. V
IH
(max)= 5.6V AC. The overshoot voltage duration is
3ns.
2. V
IL
(min)= -2.0V AC. The undershoot voltage duration is
3ns.
3. Any input 0V
V
IN
V
CCQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State
outputs.
Capacitance
(T
A
= 23C, f = 1MHz, V
CC
= 3.3V, V
REF
=1.4V 200mV)
Parameter
Symbol
Min
Max
Unit
Input Capacitance (A0-A12)
C
IN
1
-
25
pF
Input Capacitance (RAS#,CAS#,WE#)
C
IN
2
-
25
pF
Input Capacitance (CKE0)
C
IN
3
-
25
pF
Input Capacitance (CK0,CK2)
C
IN
4
-
13
pF
Input Capacitance (CS0#,CS2#)
C
IN
5
-
15
pF
Input Capacitance (DQM0-DQM7)
C
IN
6
-
10
pF
Input Capacitance (BA0-BA1)
C
IN
7
-
25
pF
Data input/output capacitance (DQ0-DQ63)
C
OUT
-
12
pF
June 2003
Rev. 1
WED3DG649V-D2
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
OPERATING CURRENT CHARACTERISTICS
(V
CC
= 3.3V, 0C
T
A
70C)
Notes: 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS (V
IH
/V
IL
= V
CC
/V
SSQ
)
Parameters
Symbol
Conditions
Versions
Units
Note
133
100
Operating Current
(One bank active)
I
CC1
Burst Length = 1
t
RC
t
RC
(min)
I
OL
= 0mA
520
440
mA
1
Precharge Standby Current
in Power Down Mode
I
CC2P
CKE V
IL
(max), t
CC
= 10ns
10
mA
I
CC2PS
CKE & CK V
IL
(max), t
CC
=
10
mA
Precharge Standby Current
in Non-Power Down Mode
I
CC2N
CKE V
IH
(min), CS V
IH
(min), t
CC
=10ns
Input signals are charged one time during 20
80
mA
I
CC2NS
CKE V
IH
(min), CK V
IL
(max), t
CC
=
Input signals are stable
40
mA
Active standby current in power-
down mode
I
CC3P
CKE V
IL
(max), t
CC
= 10ns
20
mA
I
CC3PS
CKE & CK V
IL
(max), t
CC
=
20
Active standby in current non
power-down mode
I
CC3N
CKE V
IH
(min), CS V
IH
(min), t
CC
= 10ns
Input signals are charged one time during 20ns
120
mA
I
CC3NS
CKE V
IH
(min), CK V
IL
(max), t
CC
=
input signals are stable
100
mA
Operating current (Burst mode)
I
CC4
Io = mA
Page burst
4 Banks activated
t
CCD
= 2CK
600
520
mA
1
Refresh current
I
CC5
t
RC
t
RC
(min)
880
760
mA
2
Self refresh current
I
CC6
CKE 0.2V
10
mA
June 2003
Rev. 1
WED3DG649V-D2
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
ALL DIMENSIONS ARE IN INCHES
.157 (2X)
.350
.614
.250
P1
.450
.125 (2X)
5.255 MAX.
4.550
.250
2.150
.050
.157
.150 MAX.
1.000
.700
MIN.
MAX.
.004
278
2.275
1.450
PACKAGE DIMENSIONS
ORDERING INFORMATION
Note: Modules are available in industrial temperature - 40C
T
A
85C.
Add an "I" to the end of the part number.
Part Number
Speed
CAS Latency
WED3DG639V10D2
100MHz
CL=2
WED3DG639V7D2
133MHz
CL=2
WED3DG639V75D2
133MHz
CL=3
Note: Available with WP (write protect) on pin 81.
Part Number
Speed
CAS Latency
WED3DG649V10D2
100MHz
CL=2
WED3DG649V7D2
133MHz
CL=2
WED3DG649V75D2
133MHz
CL=3
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