WED3DG649V-D1
1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
May 2004
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
64MB- 8Mx64 SDRAM, UNBUFFERED
PC100 and PC133 compatible
Burst
Mode
Operation
Auto and Self Refresh capability
LVTTL compatible inputs and outputs
Serial Presence Detect with EEPROM
Fully synchronous: All signals are registered on the positive
edge of the system clock
Programmable Burst Lengths: 1, 2, 4, 8 or Full Page
3.3V
0.3V Power Supply
144 Pin SO-DIMM JEDEC
The WED3DG649V is a 8Mx64 synchronous DRAM
module which consists of four 8Meg x 16 SDRAM
components in TSOP II package, and one 2Kb EEPROM
in an 8 pin TSSOP package for Serial Presence Detect
which are mounted on a 144 pin SO-DIMM multilayer
FR4 Substrate.
* This product is subject to change without notice.
DESCRIPTION
FEATURES
PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)
PIN NAMES
* These pins are not used in this module.
** These pins should be NC in the system which does
not support SPD.
A0 A11
Address Input (Multiplexed)
BA0-1
Select Bank
DQ0-63
Data Input/Output
CLK0
Clock Input
CKE0
Clock Enable Input
CS0#
Chip Select Input
RAS#
Row Address Strobe
CAS#
Column Address Strobe
WE#
Write Enable
DQM0-7
DQM
V
CC
Power Supply (3.3V)
V
SS
Ground
*V
REF
Power Supply for Reference
SDA
Serial Data I/O
SCL
Serial Clock
DNU
Do Not Use
NC
No Connect
PINOUT
PIN
FRONT
PIN
BACK
PIN
FRONT
PIN
BACK
PIN
BACK
PIN
BACK
1
V
SS
2
V
SS
51
DQ14
52
DQ46
95
DQ21
96
DQ53
3
DQ0
4
DQ32
53
DQ15
54
DQ47
97
DQ22
98
DQ54
5
DQ1
6
DQ33
55
V
SS
56
V
SS
99
DQ23
100
DQ55
7
DQ2
8
DQ34
57
NC
58
NC
101
V
CC
102
V
CC
9
DQ3
10
DQ35
59
NC
60
NC
103
A6
104
A7
11
V
CC
12
V
CC
105
A8
106
BA0
13
DQ4
14
DQ36
107
V
SS
108
V
SS
15
DQ5
16
DQ37
109
A9
110
BA1
17
DQ6
18
DQ38
61
CLK0
62
CKE0
111
A10/AP
112
A11
19
DQ7
20
DQ39
63
V
CC
64
V
CC
113
V
CC
114
V
CC
21
V
SS
22
V
SS
65
RAS#
66
CAS#
115
DQM2
116
DQM6
23
DQM0
24
DQM4
67
WE#
68
*CKE1
117
DQM3
118
DQM7
25
DQM1
26
DQM5
69
CS0#
70
*A12
119
V
SS
120
V
SS
27
V
CC
28
V
CC
71
*CS1#
72
*A13
121
DQ24
122
DQ56
29
A0
30
A3
73
DNU
74
*CLK1
123
DQ25
124
DQ57
31
A1
32
A4
75
VSS
76
V
SS
125
DQ26
126
DQ58
33
A2
34
A5
77
NC
78
NC
127
DQ27
128
DQ59
35
V
SS
36
V
SS
79
NC
80
NC
129
V
CC
130
V
CC
37
DQ8
38
DQ40
81
V
CC
82
V
CC
131
DQ28
132
DQ60
39
DQ9
40
DQ41
83
DQ16
84
DQ48
133
DQ29
134
DQ61
41
DQ10
42
DQ42
85
DQ17
86
DQ49
135
DQ30
136
DQ62
43
DQ11
44
DQ43
87
DQ18
88
DQ50
137
DQ31
138
DQ63
45
V
CC
46
V
CC
89
DQ19
90
DQ51
139
V
SS
140
V
SS
47
DQ12
48
DQ44
91
V
SS
92
V
SS
141
**SDA
142
**SCL
49
DQ13
50
DQ45
93
DQ20
94
DQ52
143
V
CC
144
V
CC
VOLTAGE KEY
WED3DG649V-D1
2
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
May 2004
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
FUNCTIONAL BLOCK DIAGRAM
CS0#
DQM2
DQM0
DQM1
UDQM
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
LDQM
CS#
U0
DQM4
DQM5
UDQM
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
LDQM
CS#
U2
DQM6
DQM7
UDQM
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
LDQM
CS#
U3
DQM3
UDQM
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
LDQM
CS#
U1
SA0
U0
U1
U2
U3
SA2
SA1
SDA
SERIAL PD
WP
10
10pF
RAS#
CAS#
WE#
CKE0
DQn
Every DQpin of SDRAM
TWO 0.1 uF CAPACITORS
PER EACH SDRAM
To all SDRAM
SDRAM U0-U3
SDRAM U0-U3
SDRAM U0-U3
SDRAM U0-U3
SDRAM U0-U3
A0-A11, BA0 & BA1
CLK0
CLK1
SCL
47
10
V
CC
V
CC
WED3DG649V-D1
3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
May 2004
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
Voltage on any pin relative to V
SS
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
CC
supply relative to V
SS
V
CC
, V
CCQ
-1.0 ~ 4.6
V
Storage Temperature
T
STG
-55 ~ +150
C
Power Dissipation
P
D
9 W
Short Circuit Current
I
OS
50
mA
Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply Voltage
V
CC
3.0
3.3 3.6
V
Input High Voltage
V
IH
2.0
3.0
V
CCQ+0.3
V
1
Input Low Voltage
V
IL
-0.3
--
0.8
V
2
Output High Voltage
V
OH
2.4
--
--
V
I
OH
= -2mA
Output Low Voltage
V
OL
--
--
0.4
V
I
OL
= -2mA
Input Leakage Current
I
LI
-10
--
10
A
3
Note: 1. V
IH
(max)= 5.6V AC. The overshoot voltage duration is 3ns.
2.
V
IL
(min)= -2.0V AC. The undershoot voltage duration is 3ns.
3. Any input 0V V
IN
V
CCQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
(T
A
= 25C, f = 1MHz, V
CC
= 3.3V, V
REF
=1.4V 200mV)
Parameter
Symbol
Max
Unit
Input Capacitance (A0-A11)
C
IN1
25
pF
Input Capacitance (RAS#,CAS#,WE#)
C
IN2
25
pF
Input Capacitance (CKE0)
C
IN3
25
pF
Input Capacitance (CLK0)
C
IN4
18
pF
Input Capacitance (CS0#)
C
IN5
25
pF
Input Capacitance (DQM0-DQM7)
C
IN6
8
pF
Input Capacitance (BA0-BA1)
C
IN7
25
pF
Data input/output capacitance (DQ0-DQ63)
Cou
T
9.5
pF
RECOMMENDED DC OPERATING CONDITIONS
(Voltage Referenced to: V
SS
= 0V, T
A
0C +70C)
WED3DG649V-D1
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
May 2004
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
OPERATING CURRENT CHARACTERISTICS
(V
CC
= 3.3V, T
A
= 0C +70C)
Notes: 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS (V
IH
/V
IL
= V
CCQ
/V
SSQ
)
Version
Parameter
Symbol
Conditions
133/100
Units
Note
Operating Current
(One bank active)
I
CC1
Burst Length = 1
t
RC
t
RC
(min)
I
OL
= 0mA
560
mA
1
Precharge Standby Current
in Power Down Mode
I
CC2P
CKE V
IL
(max), t
CC
= 10ns
4
mA
I
CC2PS
CKE & CLK
V
IL
(max), t
CC
=
4
Precharge Standby Current
in Non-Power Down Mode
I
CC2N
CKE
V
IH
(min), CS V
IH
(min), tcc =10ns
Input signals are charged one time during 20
80
mA
I
CC2NS
CKE V
IH
(min), CLK V
IL
(max), t
CC
=
Input signals are stable
30
Active Standby Current in
Power-Down Mode
I
CC3P
CKE V
IL
(max), t
CC
= 10ns
20
mA
I
CC3PS
CKE & CLK
V
IL
(max), t
CC
=
20
Active Standby Current in
Non-Power Down Mode
I
CC3N
CKE V
IH
(min), CS V
IH
(min), tcc = 10ns Input
signals are changed one time during 20ns
120
mA
I
CC3NS
CKE V
IH
(min), CLK V
IL
(max), tcc =
Input signals are stable
80
mA
Operating Current (Burst mode)
I
CC4
Io = mA
Page burst
4 Banks activated
t
CCD
= 2CLK
580
mA
1
Refresh Current
I
CC5
t
RC
t
RC
(min)
840
mA
2
Self Refresh Current
I
CC6
CKE 0.2V
6
mA
WED3DG649V-D1
5
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
May 2004
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
Note: For industrial temperature range product, add an "I" to the end of the part number.
Ordering Information
Speed
CAS Latency
Height*
WED3DG649V10D1
100MHz
CL=2
31.75 (1.250")
WED3DG649V7D1
133MHz
CL=2
31.75 (1.250")
WED3DG649V75D1
133MHz
CL=3
31.75 (1.250")
PACKAGE DIMENSIONS FOR D1
3.99
(0.157)
2.01 (0.079 Min)
67.72
(2.661 Max)
32.79
(1.291)
4.60 (0.181)
1.50 (0.059)
28.2
(1.112)
23.14
(0.913)
19.99
(0.787)
31.75
(1.250)
Max
2.54
(0.100)
MAX.
3.20
(0.126)
MIN.
0.99
0.10
(0.039)
( 0.004)
PACKAGE DIMENSIONS FOR D1
* All Dimensions are in millimeters and (inches).
WED3DG649V-D1
6
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
May 2004
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
Document Title
64MB- 8Mx64 SDRAM, UNBUFFERED
Revision History
Rev #
History
Release Date
Status
Rev 1
1.1 Updated CAP and I
DD
Specs
5-04
Final
PDF 
ZIP