WED3DG7266V-D1
1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
Febuary 2006
Rev. 2
PRELIMINARY*
512MB 64Mx72 SDRAM, UNBUFFERED, w/PLL
FEATURES
PC100
and
PC133
Burst
Mode
Operation
Auto and Self Refresh capability
LVTTL compatible inputs and outputs
Serial Presence Detect with EEPROM
Fully synchronous: All signals are registered on the
positive edge of the system clock
Programmable Burst Lengths: 1, 2, 4, 8 or Full
Page
Single
Rank
3.3V 0.3V Power Supply
144
Pin
SO-DIMM
JEDEC
D1: 31.75 (1.25") TYP
DESCRIPTION
The WED3DG7266V is a 64Mx72 synchronous DRAM
module which consists of nine 64Mx8 SDRAM components
in TSOP II package, and one 2Kb EEPROM in an 8
pin TSOP package for Serial Presence Detect which
are mounted on a 144 pin SO-DIMM multilayer FR4
Substrate.
NOTE: Consult factory for availability of:
RoHS compliant products
Vendor source control options
Industrial temperature option
PIN NAMES
A0 A12
Address Input (Multiplexed)
BA0-1
Select Bank
DQ0-63
Data Input/Output
CLK0, CLK1
Clock Input
CB0-7
Check Bit (Data-In/Data-Out)
CKE0
Clock Enable Input
CS0#
Chip Select Input
RAS#
Row Address Strobe
CAS#
Column Address Strobe
WE#
#Write Enable
DQM0-7
DQM
V
CC
Power Supply (3.3V)
V
SS
Ground
SDA
Serial Data I/O
SCL
Serial Clock
DNU
Do Not Use
NC
No Connect
* These pins are not used in this module
** These pins should be NC in the system which does
not support SPD.
PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)
PINOUT
PIN
FRONT
PIN
BACK
PIN
FRONT
PIN
BACK
PIN
FRONT
PIN
BACK
1
V
SS
2
V
SS
49
DQ13
50
DQ45
97
DQ22
98
DQ54
3
DQ0
4
DQ32
51
DQ14
52
DQ46
99
DQ23
100
DQ55
5
DQ1
6
DQ33
53
DQ15
54
DQ47
101
V
CC
102
V
CC
7
DQ2
8
DQ34
55
V
SS
56
V
SS
103
A6
104
A7
9
DQ3
10
DQ35
57
CB0
58
CB4
105
A8
106
BA0
11
V
CC
12
V
CC
59
CB1
60
CB5
107
V
SS
108
V
SS
13
DQ4
14
DQ36
61
CLK0
62
CKE0
109
A9
110
BA1
15
DQ5
16
DQ37
63
V
CC
64
V
CC
111
A10
112
A11
17
DQ6
18
DQ38
65
RAS#
66
CAS#
113
V
CC
114
V
CC
19
DQ7
20
DQ39
67
WE#
68
CKE1*
115
DQMB2
116
DQMB6
21
V
SS
22
V
SS
69
SO#
70
A12*
117
DQMB3
118
DQMB7
23
DQMB0
24
DQMB4
71
S1#*
72
NC
119
V
SS
120
V
SS
25
DQMB1
26
DQMB5
73
NC
74
CLK1
121
DQ24
122
DQ56
27
V
CC
28
V
CC
75
V
SS
76
V
SS
123
DQ25
124
DQ57
29
A0
30
A3
77
CB2
78
CB6
125
DQ26
126
DQ58
31
A1
32
A4
79
CB3
80
CB7
127
DQ27
128
DQ59
33
A2
34
A5
81
V
CC
82
V
CC
129
V
CC
130
V
CC
35
V
SS
36
V
SS
83
DQ16
84
DQ48
131
DQ28
132
DQ60
37
DQ8
38
DQ40
85
DQ17
86
DQ49
133
DQ29
134
DQ61
39
DQ9
40
DQ41
87
DQ18
88
DQ50
135
DQ30
136
DQ62
41
DQ10
42
DQ42
89
DQ19
90
DQ51
137
DQ31
138
DQ63
43
DQ11
44
DQ43
91
V
SS
92
V
SS
139
V
SS
140
V
SS
45
V
CC
46
V
CC
93
DQ20
94
DQ52
141
SDA
142
SCL
47
DQ12
48
DQ44
95
DQ21
96
DQ53
143
V
CC
144
V
CC
WED3DG7266V-D1
2
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
Febuary 2006
Rev. 2
PRELIMINARY
FUNCTIONAL BLOCK DIAGRAM
DQMB0
WE#
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
S0#
DQM
WE#
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
DQ8
WE#
DQM
S0#
DQ23
DQ22
DQ21
DQ20
DQ19
DQ18
DQ17
DQ16
WE#
DQM
S0#
WE#
DQM
S0#
DQ31
DQ30
DQ29
DQ28
DQ27
DQ26
DQ25
DQ24
WE#
DQM
S0#
DQ62
DQ63
DQ61
DQ60
DQ59
DQ58
DQ57
DQ56
DQ47
DQ51
DQ55
DQ54
DQ53
DQ52
DQ49
DQ50
DQ48
DQ43
DQ45
DQ46
DQ44
DQ41
DQ42
DQ40
DQ39
DQ37
DQ38
DQ35
DQ36
DQ33
DQ34
DQ32
WE#
WE#
DQM
S0#
DQM
S0#
WE#
S0#
DQM
WE#
DQM
S0#
S0#
DQMB1
DQMB2
DQMB3
DQMB7
DQMB6
DQMB5
DQMB4
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 3
I/O 7
I/O 6
I/O 5
I/O 4
I/O 2
I/O 1
I/O 0
I/O 3
I/O 7
I/O 6
I/O 5
I/O 4
I/O 2
I/O 1
I/O 0
I/O 3
I/O 7
I/O 6
I/O 5
I/O 4
I/O 2
I/O 1
I/O 0
I/O 3
I/O 7
I/O 6
I/O 5
I/O 4
I/O 2
I/O 1
I/O 0
I/O 3
I/O 7
I/O 6
I/O 5
I/O 4
I/O 2
I/O 1
I/O 0
I/O 7
I/O 0
I/O 1
I/O 2
I/O 4
I/O 5
I/O 6
I/O 3
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O 0
I/O 1
I/O 2
I/O 0
I/O 1
I/O 2
I/O 4
I/O 5
I/O 6
I/O 7
I/O 3
CB3
CB6
CB7
CB4
CB5
CB1
CB2
CB0
V
SS
A0
CAS#
RAS#
CKE0
V
CC
CKE: SDRAM
CAS#: SDRAM
RAS#: SDRAM
SCL
CLK0
SDRAMs
PLL
SDA
A2
A1
SERIAL PD
A0-A12: SDRAM
A0-A12
BA0-BA1
BA0-BA1: SDRAM
SDRAM
SDRAM
*CLOCK WIRING
CLOCK
INPUT
SDRAMS
*CLK0
*CLK1
4 OR 5 SDRAMS
4 OR 5 SDRAMS
NOTE: DQ wiring may differ than described in this
drawing however, DQ/DQMB/CKE/S relationships
must be maintained as shown.
WED3DG7266V-D1
3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
Febuary 2006
Rev. 2
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
Voltage on any pin relative to V
SS
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
CC
supply relative to V
SS
V
CC
, V
CCQ
-1.0 ~ 4.6
V
Storage Temperature
T
STG
-55 ~ +150
C
Power Dissipation
P
D
9 W
Short Circuit Current
I
OS
50
mA
Note:
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply Voltage
V
CC
3.0
3.3 3.6
V
Input High Voltage
V
IH
2.0
3.0
V
CCQ
+0.3
V
1
Input Low Voltage
V
IL
-0.3
--
0.8
V
2
Output High Voltage
V
OH
2.4
--
--
V
I
OH
= -2mA
Output Low Voltage
V
OL
--
--
0.4
V
I
OL
= -2mA
Input Leakage Current
I
LI
-10
--
10
A
3
Note: 1. V
IH
(max)= 5.6V AC. The overshoot voltage duration is 3ns.
2.
V
IL
(min)= -2.0V AC. The undershoot voltage duration is 3ns.
3. Any input 0V V
IN
V
CCQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
T
A
= 25C, f = 1MHz, V
CC
= 3.3V, V
REF
= 1.4V 200mV
Parameter
Symbol
Max
Unit
Input Capacitance (A0-A12)
C
IN1
40
pF
Input Capacitance (RAS#,CAS#,WE#)
C
IN2
40
pF
Input Capacitance (CKE0)
C
IN3
40
pF
Input Capacitance (CK0)
C
IN4
6
pF
Input Capacitance (CS0#)
C
IN5
40
pF
Input Capacitance (DQM0-DQM7)
C
IN6
7
pF
Input Capacitance (BA0-BA1)
C
IN7
40
pF
Data Input/Output Capacitance (DQ0-DQ63)
C
OUT
9
pF
Data Input/Output Capacitance (CB0-7)
C
OUT1
9
pF
RECOMMENDED DC OPERATING CONDITIONS
Voltage Referenced to: V
SS
= 0V, 0C
T
A
+70C
WED3DG7266V-D1
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
Febuary 2006
Rev. 2
PRELIMINARY
OPERATING CURRENT CHARACTERISTICS
(V
CC
= 3.3V, T
A
= 0C +70C)
Notes:
1. Measured with outputs open.
2. Refresh period is 64ms.
Version
Parameter
Symbol
Conditions
133/100
Units
Note
Operating Current
(One bank active)
I
CC1
Burst Length = 1
t
RC
t
RC
(min)
I
OL
= 0mA
1,925
mA
1
Precharge Standby Current
in Power Down Mode
I
CC2P
CKE V
IL
(max), t
CC
= 10ns
64
mA
I
CC2PS
CKE & CLK
V
IL
(max), t
CC
=
64
Precharge Standby Current
in Non-Power Down Mode
Icc
2N
CKE
V
IH
(min), CS V
IH
(min), tcc =10ns
Input signals are charged one time during 20
395
mA
Icc
2NS
CKE V
IH
(min), CLK V
IL
(max), t
CC
=
Input signals are stable
215
Active Standby Current in
Power-Down Mode
I
CC3P
CKE V
IL
(max), t
CC
= 10ns
100
mA
I
CC3PS
CKE & CLK
V
IL
(max), t
CC
=
100
Active Standby Current in
Non-Power Down Mode
I
CC3N
CKE V
IH
(min), CS V
IH
(min), tcc = 10ns Input
signals are changed one time during 20ns
575
mA
I
CC3NS
CKE V
IH
(min), CLK V
IL
(max), tcc =
Input signals are stable
420
mA
Operating Current (Burst mode)
I
CC4
Io = mA
Page burst
4 Banks activated
t
CCD
= 2CLK
1,925
mA
1
Refresh Current
I
CC5
t
RC
t
RC
(min)
3,095
mA
2
Self Refresh Current
I
CC6
CKE 0.2V
180
mA
WED3DG7266V-D1
5
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
Febuary 2006
Rev. 2
PRELIMINARY
Ordering Information
Speed
CAS
Latency
Height
WED3DG7266V10D1xx
100MHz
CL=2
31.75 (1.250") TYP
WED3DG7266V7D1xx
133MHz
CL=2
31.75 (1.250") TYP
WED3DG7266V75D1xx
133MHz
CL=3
31.75 (1.250") TYP
Notes:
Consult Factory for availability of RoHS products. (G = RoHS Compliant)
Vendor specifi c part numbers are used to provide memory components source control. The place holder for this is shown as lower case "x" in the part numbers above and is to be
replaced with the respective vendors code. Consult factory for qualifi ed sourcing options. (M = Micron, S = Samsung & consult factory for others)
Consult factory for availability of industrial temperature (-40C to 85C) option
3.99
(0.157)
2.01 (0.079 Min)
67.72
(2.661 Max)
32.79
(1.291)
4.60 (0.181)
1.50 (0.059)
28.2
(1.112)
23.14
(0.913)
19.99
(0.787)
31.75
(1.250)
Max
3.81
(0.150)
MAX.
9.91
(0.039)
( 0.004)
PACKAGE DIMENSIONS FOR D1
* ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES).
Industrial Temperature
Ordering Information
Speed
CAS
Latency
Height
WED3DG7266V10D1I-xx
100MHz
CL=2
31.75 (1.250") TYP
WED3DG7266V7D1I-xx
133MHz
CL=2
31.75 (1.250") TYP
WED3DG7266V75D1I-xx
133MHz
CL=3
31.75 (1.250") TYP
ORDERING INFORMATION FOR D1
WED3DG7266V-D1
6
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
Febuary 2006
Rev. 2
PRELIMINARY
PART NUMBERING GUIDE
WED 3 D G 7266 V xx D1 I- x G
WEDC
MEMORY
SDRAM
GOLD
DEPTH & BUS WIDTH
3.3 VOLTS
CLOCK SPEED (MHz)
10 = 100MHz @ CL = 2
7 = 133MHz @ CL = 2
75 = 133MHz @ CL = 3
PACKAGE 144 PIN SO-DIMM
INDUSTRIAL TEMP
COMPONENT VENDOR NAME
(M = Micron)
(S = Samsung)
G = ROHS COMPLIANT
WED3DG7266V-D1
7
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
Febuary 2006
Rev. 2
PRELIMINARY
Document Title
512MB - 64Mx72 SDRAM UNBUFFERED, w/PLL
Revision History
Rev #
History
Release Date
Status
Rev A
Created
3-02
Advanced
Rev 0
0.1 Added PLL spec
0.2 Updated CAP and IDD specs
0.3 Moved status from advanced to preliminary
0.4 Removed "ED" from part number
0.5 Moved from Advanced to preliminary
6-04
Preliminary
Rev 1
1.1 Added "ED" to part number
7-05
Preliminary
Rev 2
2.1 Added RoHS, vendor source and industrial option notes
2.2 Added part number guide
2-06
Preliminary
PDF 
ZIP