White Microelectronics Phoenix, AZ (602) 437-1520
7
FLASH MODULES
1
128Kx64 5V FLASH MODULE
PRELIMINARY*
FEATURES
s Access Times of 60, 70, 90, 120, 150ns
s Packaging
116 lead, 40mm square, Hermetic CQFP (Package 504)
s Sector Architecture
8 equal size sectors of 16KBytes each
Any combination of sectors can be concurrently erased.
Also supports full chip erase
s 100,000 Erase/Program Cycles Minimum (0
C to 70
C)
s Data Retention, 10 Year Minimum at 125
C
s Organized as 128Kx64, user configurable as 256Kx32,
512Kx16 or 1Mx8.
WF128K64-XG4WX5
s Commercial, Industrial and Military Temperature Ranges
s 5 Volt Programming; 5V (
10%) Supply
s Low Power CMOS, 8mA Standby Typical
s Hardware and Software Write Protection
s TTL Compatible Inputs and Outputs
s Built-in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation
s Weight
WF128K64-XG4WX5 - 20 grams typical
* This data sheet describes a product under development and is subject
to change without notice.
Note: Programming information available upon request.
FIG. 1
PIN CONFIGURATION FOR WF128K64-XG4WX5
1
128K x 8
8
I / O
0 - 7
CS
1
2
128K x 8
8
I / O
8 - 1 5
CS
2
8
I / O . . .
CS
x
8
128K x 8
8
I / O
5 6 - 6 3
CS
8
A
0 - 1 6
O E
WE
1
WE
2
WE
x
WE
8
. . . . . .
BLOCK DIAGRAM
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
116
115
114
113
112
111
110
109
108
107
106
105
104
103
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
GND
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
V
CC
WE
3
CS
3
NC
NC
NC
NC
A
16
A
15
WE
4
CS
4
OE
CS
5
WE
5
A
14
A
13
A
12
A
11
A
10
NC
CS
6
WE
6
V
CC
I/O
32
I/O
33
I/O
34
I/O
60
I/O
59
I/O
58
I/O
57
I/O
56
GND
I/O
55
I/O
54
I/O
53
I/O
52
I/O
51
I/O
50
I/O
49
I/O
48
GND
I/O
47
I/O
46
I/O
45
I/O
44
I/O
43
I/O
42
I/O
41
I/O
40
GND
I/O
39
I/O
38
I/O
37
I/O
36
I/O
35
I/O
2
I/O
1
I/O
0
V
CC
WE
2
CS
2
NC
A
0
A
1
A
2
A
3
A
4
WE
1
CS
1
NC
CS
8
WE
8
A
5
A
6
A
7
A
8
A
9
NC
CS
7
WE
7
V
CC
I/O
63
I/O
62
I/O
61
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
102
101
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
75
74
TOP VIEW
I/O
0-63
Data Inputs/Outputs
A
0-16
Address Inputs
WE
1-8
Write Enables
CS
1-8
Chip Selects
OE
Output Enable
V
CC
Power Supply
GND
Ground
NC
Not Connected
PIN DESCRIPTION
September 1998
2
White Microelectronics Phoenix, AZ (602) 437-1520
7
FLASH MODULES
WF128K64-XG4WX5
ABSOLUTE MAXIMUM RATINGS (1)
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,
inputs may overshoot V
SS
to -2.0 V for periods of up to 20ns. Maximum DC
voltage on output and I/O pins is V
CC
+ 0.5V. During voltage transitions,
outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A
9
pin is -0.5V. During voltage transitions, A
9
may
overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A
9
is +13.5V which may overshoot to 14.0 V for periods up to 20ns.
DC CHARACTERISTICS - CMOS COMPATIBLE
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
C to +125
C)
NOTES:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component (at 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
V
CC
4.5
5.5
V
Input High Voltage
V
IH
2.0
V
CC
+ 0.3
V
Input Low Voltage
V
IL
-0.5
+0.8
V
Operating Temp. (Mil.)
T
A
-55
+125
C
A
9
Voltage for Sector Protect
V
ID
11.5
12.5
V
Parameter
Unit
Operating Temperature
-55 to +125
C
Supply Voltage Range (V
CC
)
-2.0 to +7.0
V
Signal voltage range (any pin except A9) (2)
-2.0 to +7.0
V
Storage Temperature Range
-65 to +150
C
Lead Temperature (soldering, 10 seconds)
+300
C
Data Retention Mil Temp
10 years
Endurance (write/erase cycles) Mil Temp
10,000 cycles min.
A
9
Voltage for sector protect (V
ID
) (3)
-2.0 to +14.0
V
CAPACITANCE
(T
A
= +25
C)
Parameter
Symbol
Conditions
Max
Unit
OE capacitance
C
OE
V
IN
= 0 V, f = 1.0 MHz
100
pF
WE capacitance
C
WE
V
IN
= 0 V, f = 1.0 MHz
20
pF
CS capacitance
C
CS
V
IN
= 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
C
I/O
V
I/O
= 0 V, f = 1.0 MHz
20
pF
Address input capacitance
C
AD
V
IN
= 0 V, f = 1.0 MHz
100
pF
This parameter is guaranteed by design but not tested.
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
I
LI
V
CC
= 5.5, V
IN
= GND to V
CC
10
A
Output Leakage Current
I
LOx32
V
CC
= 5.5, V
IN
= GND to V
CC
10
A
V
CC
Active Current for Read
(1)
I
CC1
CS = V
IL
, OE = V
IH
280
mA
V
CC
Active Current for Program or Erase
(2)
I
CC2
CS = V
IL
, OE = V
IH
400
mA
V
CC
Standby Current
I
CC3
V
CC
= 5.5, CS = V
IH
, f = 5MHz
13
mA
V
CC
Static Current
I
CC4
V
CC
= 5.5, CS = V
IH
1.2
mA
Output Low Voltage
V
OL
I
OL
= 12.0 mA, V
CC
= 4.5
0.45
V
Output High Voltage
V
OH1
I
OH
= -2.5 mA, V
CC
= 4.5
0.85 x
V
V
CC
Output High Voltage
V
OH2
I
OH
= -100
A, V
CC
= 4.5
V
CC
V
-0.4
Low V
CC
Lock Out Voltage
V
LKO
3.2
V
White Microelectronics Phoenix, AZ (602) 437-1520
7
FLASH MODULES
3
WF128K64-XG4WX5
AC CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS, WE CONTROLLED
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
C to +125
C)
Parameter
Symbol
-60
-70
-90
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
AVAV
t
WC
60
70
90
120
150
ns
Chip Select Setup Time
t
ELWL
t
CS
0
0
0
0
0
ns
Write Enable Pulse Width
t
WLWH
t
WP
30
35
45
50
50
ns
Address Setup Time
t
AVWL
t
AS
0
0
0
0
0
ns
Data Setup Time
t
DVWH
t
DS
30
30
45
50
50
ns
Data Hold Time
t
WHDX
t
DH
0
0
0
0
0
ns
Address Hold Time
t
WLAX
t
AH
45
45
45
50
50
ns
Chip Select Hold Time
t
WHEH
t
CH
0
0
0
0
0
ns
Write Enable Pulse Width High
t
WHWL
t
WPH
20
20
20
20
20
ns
Duration of Byte Programming Operation (min)
t
WHWH1
14
14
14
14
14
s
Chip and Sector Erase Time
t
WHWH2
2.2
60
2.2
60
2.2
60
2.2
60
2.2
60
sec
Read Recovery Time Before Write
t
GHWL
0
0
0
0
0
ns
V
CC
Setup Time
t
VCS
50
50
50
50
50
s
Chip Programming Time
12.5
12.5
12.5
12.5
12.5
sec
Output Enable Setup Time
t
OES
0
0
0
0
0
ns
Output Enable Hold Time (1)
t
OEH
10
10
10
10
10
ns
1. For Toggle and Data Polling.
AC CHARACTERISTICS READ ONLY OPERATIONS
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
C to +125
C)
Parameter
Symbol
-60
-70
-90
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
AVAV
t
RC
60
70
90
120
150
ns
Address Access Time
t
AVQV
t
ACC
60
70
90
120
150
ns
Chip Select Access Time
t
ELQV
t
CE
60
70
90
120
150
ns
OE to Output Valid
t
GLQV
t
OE
30
35
40
50
55
ns
Chip Select to Output High Z (1)
t
EHQZ
t
DF
20
20
25
30
35
ns
OE High to Output High Z (1)
t
GHQZ
t
DF
20
20
25
30
35
ns
Output Hold from Address, CS or OE Change,
t
AXQX
t
OH
0
0
0
0
0
ns
whichever is first
1. Guaranteed by design, not tested.
4
White Microelectronics Phoenix, AZ (602) 437-1520
7
FLASH MODULES
WF128K64-XG4WX5
AC CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS, CS CONTROLLED
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
C to +125
C)
Parameter
Symbol
-60
-70
-90
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
AVAV
t
WC
60
70
90
120
150
ns
WE Setup Time
t
WLEL
t
WS
0
0
0
0
0
ns
CS Pulse Width
t
ELEH
t
CP
30
35
45
50
50
ns
Address Setup Time
t
AVEL
t
AS
0
0
0
0
0
ns
Data Setup Time
t
DVEH
t
DS
30
30
45
50
50
ns
Data Hold Time
t
EHDX
t
DH
0
0
0
0
0
ns
Address Hold Time
t
ELAX
t
AH
45
45
45
50
50
ns
WE Hold from WE High
t
EHWH
t
WH
0
0
0
0
0
ns
CS Pulse Width High
t
EHEL
t
CPH
20
20
20
20
20
ns
Duration of Programming Operation
t
WHWH1
14
14
14
14
14
s
Duration of Erase Operation
t
WHWH2
2.2
60
2.2
60
2.2
60
2.2
60
2.2
60
sec
Read Recovery before Write
t
GHEL
0
0
0
0
0
ns
Chip Programming Time
12.5
12.5
12.5
12.5
12.5
sec
White Microelectronics Phoenix, AZ (602) 437-1520
7
FLASH MODULES
5
WF128K64-XG4WX5
FIG. 2
AC WAVEFORMS FOR READ OPERATIONS
Addresses
CS
OE
WE
Outputs
High Z
Addresses Stable
t
OE
t
RC
Output Valid
t
CE
t
ACC
t
OH
High Z
t
DF
6
White Microelectronics Phoenix, AZ (602) 437-1520
7
FLASH MODULES
WF128K64-XG4WX5
FIG. 3
WRITE/ERASE/PROGRAM OPERATION, WE CONTROLLED
NOTES:
1. PA is the address of the memory location
to be programmed.
2. PD is the data to be programmed at byte address.
3. D
7
is the output of the complement of the
data written to each chip.
4. D
OUT
is the output of the data written to
the device.
5. Figure indicates last two bus cycles of four bus
cycle sequence.
Addresses
CS
OE
WE
Data
5.0 V
5555H
PA
PA
t
WC
t
CS
PD
D
7
D
OUT
t
AH
t
WPH
t
DH
t
DS
Data Polling
t
AS
t
RC
t
WP
A0H
t
OE
t
DF
t
OH
t
CE
t
GHWL
t
WHWH1
White Microelectronics Phoenix, AZ (602) 437-1520
7
FLASH MODULES
7
WF128K64-XG4WX5
FIG. 4
AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS
NOTES:
1. SA is the sector address
for Sector Erase.
Addresses
CS
OE
WE
Data
V
CC
5555H
2AAAH
2AAAH
SA
5555H
5555H
t
WP
t
CS
t
VCS
10H/30H
55H
80H
55H
AAH
AAH
t
AH
t
AS
t
GHWL
t
WPH
t
DH
t
DS
8
White Microelectronics Phoenix, AZ (602) 437-1520
7
FLASH MODULES
WF128K64-XG4WX5
FIG. 5
AC WAVEFORMS FOR DATA POLLING DURING
EMBEDDED ALGORITHM OPERATIONS
CS
OE
WE
t
OE
t
CE
t
CH
t
OH
D7
D7 =
Valid Data
High Z
D0-D6 = Invalid
D0-D7
Valid Data
t
DF
D7
D0-D6
t
OEH
t
WHWH 1 or 2
t
OE
Data
White Microelectronics Phoenix, AZ (602) 437-1520
7
FLASH MODULES
9
WF128K64-XG4WX5
FIG. 6
WRITE/ERASE/PROGRAM OPERATION, CS CONTROLLED
NOTES:
1. PA represents the address of the memory location to be programmed.
2. PD represents the data to be programmed at byte address.
3. D
7
is the output of the complement of the data written to each chip.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates the last two bus cycles of a four bus cycle sequence.
Addresses
WE
OE
CS
Data
5.0 V
5555H
PA
PA
t
WC
t
WS
PD
D
7
D
OUT
t
AH
t
CPH
t
CP
t
DH
t
DS
Data Polling
t
AS
t
GHEL
A0H
t
WHWH1
10
White Microelectronics Phoenix, AZ (602) 437-1520
7
FLASH MODULES
WF128K64-XG4WX5
V
PP
PROGRAMMING VOLTAGE
5 = 5V
DEVICE GRADE:
M = Military Screened
-55
C to +125
C
I = Industrial
-40
C to +85
C
C = Commercial
0 to + 70
C
PACKAGE TYPE:
G4W = 116 Lead 40mm Ceramic Quad Flat Pack, CQFP (Package 504)
ACCESS TIME (ns)
ORGANIZATION, 128K x 64
User configurable as 256K x 32, 512K x 16, or 1M x 8
Flash PROM
WHITE MICROELECTRONICS
ORDERING INFORMATION
PACKAGE 504:
116 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G4W)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
38 (1.50) REF
4 PLACES
0.38 (0.015)
0.08 (0.003)
68 PLACES
1.27 (0.050)
REF
5.1 (0.200)
0.25 (0.010)
4 PLACES
39.6 (1.56)
0.38 (0.015) SQ
12.7 (0.500)
0.5 (0.020)
4 PLACES
5.1 (0.200) MAX
0.25 (0.010)
0.05 (0.002)
1.27 (0.050)
0.1 (0.005)
PIN 1 IDENTIFIER
Pin 1
W F 128K64 - XXX G4W X 5
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