1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
HI-RELIABILITY PRODUCT
WF8M32-XG4DX5
October 1999 Rev. 3
8Mx32 5V FLASH MODULE
ADVANCED*
FEATURES
s Access Time of 100, 120, 150ns
s Packaging:
68 Lead, 40 mm (1.560") square hermetic CQFP, 5.2 mm
(0.205") high (Package 503)
s Sector Architecture
32 equal size sectors of 64KBytes per each 2Mx8 chip
Any combination of sectors can be erased. Also supports
full chip erase.
s 100,000 Write/Erase Cycles Minimum
s Organized as 8Mx32
s Commercial, Industrial, and Military Temperature Ranges
s 5 Volt Read and Write. 5V
10% Supply.
s Low Power CMOS
s Data Polling and Toggle Bit feature for detection of program
or erase cycle completion.
s Supports reading or programming data to a sector not being
erased.
s RESET pin resets internal state machine to the read mode.
(Not available in HIP package for WF2M32-XHX5)
s Built-in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation, Seperate Power and Ground Planes to
improve noise immunity.
s Built in Buffering.
* This data sheet describes a product that may or may not be under
development, and is subject to change or cancellation without notice.
Note: For programming information refer to Flash Programming 16M5
Application Note.
PIN DESCRIPTION
FIG. 1
PIN CONFIGURATION FOR WF8M32-XG4DX5
I/O
0-31
Data Inputs/Outputs
A
0-22
Address Inputs
WE
Write Enable
CS
1-4
Chip Selects
OE
Output Enable
V
CC
Power Supply
RESET
Reset
GND
Ground
NC
Not Connected
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
V
CC
A
11
A
12
A
13
A
14
A
15
A
16
CS
2
OE
CS
4
A
17
A
18
A
19
A
20
A21
RESET
A22
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
1
GND
CS
3
WE
A
6
A
7
A
8
A
9
A
10
V
CC
BLOCK DIAGRAM
TOP VIEW
2M x 8
O E
W E
2M x 8
2M x 8
2M x 8
2M x 8
2M x 8
2M x 8
R E S E T
2M x 8
2M x 8
2M x 8
2M x 8
2M x 8
2M x 8
2M x 8
2M x 8
2M x 8
I/O0-31
Interface
1
4
1
1
23
1
4
1
1
23
A
0-22
CS
1-4
CS1
8
I / O
0 - 7
8
I / O
8 - 1 5
8
I / O
1 6 - 2 3
8
I / O
2 4 - 3 1
CS2
CS3
CS4
32
CS
1
selects I/O
0-7
, CS
2
selects I/O
8-15
, CS
3
selects I/O
16-23
, CS
4
selects I/O
24-31
2
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WF8M32-XG4DX5
Parameter
Symbol
Conditions
Max Unit
OE capacitance
C
OE
V
IN
= 0 V, f = 1.0 MHz
20
pF
WE capacitance
C
WE
V
IN
= 0 V, f = 1.0 MHz
20
pF
CS
1-4
capacitance
C
CS
V
IN
= 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
C
I/O
V
I/O
= 0 V, f = 1.0 MHz
60
pF
Address input capacitance
C
AD
V
IN
= 0 V, f = 1.0 MHz
20
pF
RESET capacitance
C
RST
V
IN
= O V, f = 1.0 MHz
20
pF
This parameter is guaranteed by design but not tested.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Voltage on Any Pin Relative to V
SS
V
T
-2.0 to +7.0
V
Power Dissipation
P
T
8
W
Storage Temperature
Tstg
-65 to +125
C
Short Circuit Output Current
I
OS
100
mA
Endurance - Write/Erase Cycles
100,000 min
cycles
(Mil Temp)
Data Retention (Mil Temp)
20
years
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.0
-
V
CC
+ 0.5
V
Input Low Voltage
V
IL
-0.5
-
+0.8
V
Operating Temperature (Mil.)
T
A
-55
-
+125
C
Operating Temperature (Ind.)
T
A
-40
-
+85
C
DC CHARACTERISTICS - CMOS COMPATIBLE
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
C to +125
C)
NOTES:
1. The Icc current listed includes both the DC operating current and the frequency dependent component (@ 5MHz). The frequency component typically is less than
2mA/MHz, with OE at V
IH
.
2. Icc active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
I
LI
V
CC
= 5.5, V
IN
= GND to V
CC
10
A
Output Leakage Current
I
LOx32
V
CC
= 5.5, V
IN
= GND to V
CC
10
A
V
CC
Active Current for Read (1)
I
CC1
CS = V
IL
, OE = V
IH
, f = 5MHz
640
mA
V
CC
Active Current for Program or Erase (2)
I
CC2
CS = V
IL
, OE = V
IH
960
mA
V
CC
Standby Current
I
CC3
V
CC
= 5.5, CS = V
IH
, f = 5MHz, RESET = Vcc
0.3V
160
mA
Output Low Voltage
V
OL
I
OL
= 12.0 mA, V
CC
= 4.5
0.45
V
Output High Voltage
V
OH
I
OH
= -2.5 mA, V
CC
= 4.5
0.85 x
V
Vcc
Low V
CC
Lock-Out Voltage
V
LKO
3.2
4.2
V
CAPACITANCE
(T
A
= +25
C)
3
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WF8M32-XG4DX5
AC CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS - WE CONTROLLED
(V
CC
= 5.0V, T
A
= -55
C to +125
C)
Parameter
Symbol
-100
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
AVAV
t
WC
100
120
150
ns
Chip Select Setup Time
t
ELWL
t
CS
0
0
0
ns
Write Enable Pulse Width
t
WLWH
t
WP
50
50
50
ns
Address Setup Time
t
AVWL
t
AS
0
0
0
ns
Data Setup Time
t
DVWH
t
DS
50
50
50
ns
Data Hold Time
t
WHDX
t
DH
0
0
0
ns
Address Hold Time
t
WLAX
t
AH
50
50
50
ns
Write Enable Pulse Width High
t
WHWL
t
WPH
20
20
20
ns
Duration of Byte Programming Operation (1)
t
WHWH1
300
300
300
s
Sector Erase (2)
t
WHWH2
15
15
15
sec
Read Recovery Time before Write
t
GHWL
0
0
0
s
V
CC
Setup Time
t
VCS
50
50
50
s
Chip Programming Time
44
44
44
sec
Chip Erase Time (3)
256
256
256
sec
Output Enable Hold Time (4)
t
OEH
10
10
10
ns
RESET Pulse Width
t
RP
500
500
500
ns
NOTES:
1. Typical value for t
WHWH1
is 7
s.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
AC CHARACTERISTICS READ-ONLY OPERATIONS
(V
CC
= 5.0V, T
A
= -55
C to +125
C)
Parameter
Symbol
-100
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
AVAV
t
RC
100
120
150
ns
Address Access Time
t
AVQV
t
ACC
100
120
150
ns
Chip Select Access Time
t
ELQV
t
CE
100
120
150
ns
Output Enable to Output Valid
t
GLQV
t
OE
50
50
55
ns
Chip Select High to Output High Z (1)
t
EHQZ
t
DF
30
30
35
ns
Output Enable High to Output High Z (1)
t
GHQZ
t
DF
30
30
35
ns
Output Hold from Addresses, CS or OE Change,
t
AXQX
t
OH
0
0
0
ns
whichever is First
RST Low to Read Mode (1)
t
Ready
20
20
20
s
1. Guaranteed by design, not tested.
4
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WF8M32-XG4DX5
CS
WE
RY/BY
RESET
t
RP
The rising edge of the last WE signal
Entire programming
or erase operations
t
Ready
t
BUSY
AC CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
C to +125
C)
FIG. 2
AC TEST CIRCUIT
AC TEST CONDITIONS
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Parameter
Typ
Unit
Input Pulse Levels
V
IL
= 0, V
IH
= 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
I
Current Source
D.U.T.
C = 50 pf
eff
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
Parameter
Symbol
-100
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
AVAV
t
WC
100
120
150
ns
Write Enable Setup Time
t
WLEL
t
WS
0
0
0
ns
Chip Select Pulse Width
t
ELEH
t
CP
50
50
50
ns
Address Setup Time
t
AVEL
t
AS
0
0
0
ns
Data Setup Time
t
DVEH
t
DS
50
50
50
ns
Data Hold Time
t
EHDX
t
DH
0
0
0
ns
Address Hold Time
t
ELAX
t
AH
50
50
50
ns
Chip Select Pulse Width High
t
EHEL
t
CPH
20
20
20
ns
Duration of Byte Programming Operation (1)
t
WHWH1
300
300
300
s
Sector Erase Time (2)
t
WHWH2
15
15
15
sec
Read Recovery Time
t
GHEL
0
0
0
s
Chip Programming Time
100
100
100
sec
Chip Erase Time (3)
480
480
480
sec
Output Enable Hold Time (4)
t
OEH
10
10
10
ns
NOTES:
1. Typical value for t
WHWH1
is 7
s.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
FIG. 3
RESET TIMING DIAGRAM
5
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WF8M32-XG4DX5
FIG. 4
AC WAVEFORMS FOR READ OPERATIONS
Addresses
CS
OE
WE
Outputs
High Z
Addresses Stable
t
OE
t
RC
Output Valid
t
CE
t
ACC
t
OH
High Z
t
DF
6
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WF8M32-XG4DX5
NOTES:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D
7
is the output of the complement of the data written to each chip.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
FIG. 5
WRITE/ERASE/PROGRAM
OPERATION, WE CONTROLLED
Addresses
CS
OE
WE
Data
5.0 V
5555H
PA
PA
t
WC
t
CS
PD
D
7
D
OUT
t
AH
t
WPH
t
DH
t
DS
Data Polling
t
AS
t
RC
t
WP
A0H
t
OE
t
DF
t
OH
t
CE
t
GHWL
t
WHWH1
7
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WF8M32-XG4DX5
FIG. 6
AC WAVEFORMS CHIP/SECTOR
ERASE OPERATIONS
NOTE:
1. SA is the sector address for Sector Erase.
Addresses
CS
OE
WE
Data
V
CC
5555H
2AAAH
2AAAH
SA
5555H
5555H
t
WP
t
CS
t
VCS
10H/30H
55H
80H
55H
AAH
AAH
t
AH
t
GHWL
t
WPH
t
DH
t
DS
t
AS
8
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WF8M32-XG4DX5
FIG. 7
AC WAVEFORMS FOR DATA POLLING
DURING EMBEDDED ALGORITHM OPERATIONS
CS
OE
WE
t
OE
t
CE
t
CH
t
OH
D7
D7 =
Valid Data
High Z
D0-D6 = Invalid
D0-D7
Valid Data
t
DF
D7
D0-D6
t
OEH
t
WHWH 1 or 2
Data
9
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WF8M32-XG4DX5
NOTES:
1. PA represents the address of the memory location to be programmed.
2. PD represents the data to be programmed at byte address.
3. D
7
is the output of the complement of the data written to each chip.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates the last two bus cycles of a four bus cycle sequence.
Addresses
WE
OE
CS
Data
5.0 V
5555H
PA
PA
t
WC
t
WS
PD
D
7
D
OUT
t
AH
t
CPH
t
CP
t
DH
t
DS
Data Polling
t
AS
t
GHEL
A0H
t
WHWH1
FIG. 8
ALTERNATE CS CONTROLLED
PROGRAMMING OPERATION TIMINGS
10
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WF8M32-XG4DX5
PACKAGE 503:
68 LEAD, CERAMIC QUAD FLAT PACK DUAL CAVITY, CQFP (G4D)
5.2 (0.205) MAX
1.27 (0.050)
0.1 (0.005)
0.010
+ 0.002
- 0.001
0.38 (0.015)
0.08 (0.003)
68 PLACES
1.27 (0.050)
TYP
39.6 (1.56)
0.38 (0.015) SQ
38 (1.50) TYP
4 PLACES
5.1 (0.200)
0.25 (0.010)
4 PLACES
12.7 (0.500)
0.5 (0.020)
4 PLACES
PIN 1 IDENTIFIER
Pin 1
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
ORDERING INFORMATION
V
PP
PROGRAMMING VOLTAGE
5 = 5 V
DEVICE GRADE:
M = Military Screened
-55
C to +125
C
I = Industrial
-40
C to +85
C
C = Commercial
0
C to +70
C
PACKAGE TYPE:
G4D = 40mm CQFP (Package 503)
ACCESS TIME (ns)
ORGANIZATION, 8M x 32
User configurable as 16M x 16 or 32M x 8
Flash
WHITE ELECTRONIC DESIGNS CORP.
W F 8M32 - XXX G4D X 5
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