1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
HI-RELIABILITY PRODUCT
WMF2M8-XXX5
FIG. 1
PIN CONFIGURATION FOR WMF2M8-XXX5
December 1999 Rev. 4
2Mx8 MONOLITHIC FLASH, SMD 5962-97609
PRELIMINARY*
s 5 Volt Read and Write. 5V
10% Supply.
s Low Power CMOS
s Data Polling and Toggle Bit feature for detection of program
or erase cycle completion.
s Supports reading or programming data to a sector not being
erased.
s RESET pin resets internal state machine to the read mode.
s Multiple Ground Pins for Low Noise Operation
* This data sheet describes a product under development, not fully
characterized, and is subject to change without notice.
* * Package to be developed.
Note: For programming information refer to Flash Programming 16M5
Application Note.
FEATURES
s Access Times of 90, 120, 150ns
s Packaging:
56 lead, Hermetic Ceramic, 0.520" CSOP (Package 207).
Fits standard 56 SSOP footprint.
44 pin Ceramic LCC**
44 pin Ceramic SOJ (Package 102)**
44 lead Ceramic Flatpack (Package 225)**
s Sector Architecture
32 equal size sectors of 64KBytes each
Any combination of sectors can be erased. Also supports
full chip erase.
s 100,000 Write/Erase Cycles Minimum
s Organized as 2Mx8
s Commercial, Industrial, and Military Temperature Ranges
TOP VIEW
56 CSOP
PIN DESCRIPTION
I/O
0-7
Data Inputs/Outputs
A
0-20
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
V
CC
Power Supply
GND
Ground
RY/BY
Ready/Busy
RESET
Reset
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
CS
A12
A13
A14
A15
NC
NC
NC
A20
A19
A18
A17
A16
V
CC
GND
I/O6
NC
I/O7
NC
RY/BY
OE
WE
NC
NC
I/O5
NC
I/O4
V
CC
NC
RESET
A11
A10
A9
A1
A2
A3
A4
A5
A6
A7
GND
A8
V
CC
NC
I/O1
NC
I/O0
A0
NC
NC
NC
I/O2
NC
I/O3
NC
GND
TOP VIEW
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A16
A15
A14
A13
A12
A11
A10
A9
A8
RESET
CS
GND
NC
WE
A7
A6
A5
A4
A3
A2
A1
A0
A17
A18
OE
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
V
CC
NC
NC
NC
NC
NC
NC
NC
NC
A19
A20
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
44 CSOJ**
44 FLATPACK**
** Package to be developed.
TOP VIEW
44 CLCC**
7
8
9
10
11
12
13
14
15
16
17
39
38
37
36
35
34
33
32
31
30
29
4
3
6
5
2
1 44 43 42 41 40
18 19 20 21 22 23 24 25 26 27 28
A
7
A
6
A
5
A
4
NC
NC
NC
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
I/O
3
GND
GND
V
CC
I/O
4
I/O
5
I/O
6
I/O
7
A
16
A
17
A
18
A
19
NC
NC
NC
A
20
WE
OE
RY/BY
A
8
A
9
A
10
A
11
RESET
V
CC
CS
A
12
A
13
A
14
A
15
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WMF2M8-XXX5
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Voltage on Any Pin Relative to V
SS
V
T
-2.0 to +7.0
V
Power Dissipation
P
T
8
W
Storage Temperature
Tstg
-65 to +125
C
Short Circuit Output Current
I
OS
100
mA
Endurance - Write/Erase Cycles
100,000 min
cycles
(Mil Temp)
Data Retention (Mil Temp)
20
years
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.0
-
V
CC
+ 0.5
V
Input Low Voltage
V
IL
-0.5
-
+0.8
V
Operating Temperature (Mil.)
T
A
-55
-
+125
C
Operating Temperature (Ind.)
T
A
-40
-
+85
C
DC CHARACTERISTICS - CMOS COMPATIBLE
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
C to +125
C)
NOTES:
1. The Icc current listed includes both the DC operating current and the frequency dependent component (@ 5MHz). The frequency component typically is
less than 2mA/MHz, with OE at V
IH
.
2. Icc active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
I
LI
V
CC
= 5.5, V
IN
= GND to V
CC
10
A
Output Leakage Current
I
LO
V
CC
= 5.5, V
IN
= GND to V
CC
10
A
V
CC
Active Current for Read (1)
I
CC1
CS = V
IL
, OE = V
IH
, f = 5MHz
40
mA
V
CC
Active Current for Program or Erase (2)
I
CC2
CS = V
IL
, OE = V
IH
60
mA
V
CC
Standby Current
I
CC3
V
CC
= 5.5, CS = V
IH
, f = 5MHz, RESET = Vcc
0.3V
2.0
mA
Output Low Voltage
V
OL
I
OL
= 12.0 mA, V
CC
= 4.5
0.45
V
Output High Voltage
V
OH
I
OH
= -2.5 mA, V
CC
= 4.5
0.85xV
CC
V
Low V
CC
Lock-Out Voltage
V
LKO
3.2
4.2
V
CAPACITANCE
(T
A
= +25
C)
Parameter
Symbol
Conditions
Max Unit
Address Input capacitance
C
AD
V
I/O
= 0 V, f = 1.0 MHz
12
pF
Output Enable capacitance
C
OE
V
IN
= 0 V, f = 1.0 MHz
12
pF
Write Enable capacitance
C
WE
V
IN
= 0 V, f = 1.0 MHz
12
pF
Chip Select capacitance
C
CS
V
IN
= 0 V, f = 1.0 MHz
12
pF
Data I/O capacitance
C
I/O
V
I/O
= 0 V, f = 1.0 MHz
12
pF
This parameter is guaranteed by design but not tested.
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WMF2M8-XXX5
AC CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS - WE CONTROLLED
(V
CC
= 5.0V, T
A
= -55
C to +125
C)
Parameter
Symbol
-90
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
AVAV
t
WC
90
120
150
ns
Chip Select Setup Time
t
ELWL
t
CS
0
0
0
ns
Write Enable Pulse Width
t
WLWH
t
WP
45
50
50
ns
Address Setup Time
t
AVWL
t
AS
0
0
0
ns
Data Setup Time
t
DVWH
t
DS
45
50
50
ns
Data Hold Time
t
WHDX
t
DH
0
0
0
ns
Address Hold Time
t
WLAX
t
AH
45
50
50
ns
Write Enable Pulse Width High
t
WHWL
t
WPH
20
20
20
ns
Duration of Byte Programming Operation (1)
t
WHWH1
300
300
300
s
Sector Erase (2)
t
WHWH2
15
15
15
sec
Read Recovery Time before Write
t
GHWL
0
0
0
s
V
CC
Setup Time
t
VCS
50
50
50
s
Chip Programming Time
44
44
44
sec
Chip Erase Time (3)
256
256
256
sec
Output Enable Hold Time (4)
t
OEH
10
10
10
ns
RESET Pulse Width
t
RP
500
500
500
ns
NOTES:
1. Typical value for t
WHWH1
is 7
s.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
AC CHARACTERISTICS READ-ONLY OPERATIONS
(V
CC
= 5.0V, T
A
= -55
C to +125
C)
Parameter
Symbol
-90
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
AVAV
t
RC
90
120
150
ns
Address Access Time
t
AVQV
t
ACC
90
120
150
ns
Chip Select Access Time
t
ELQV
t
CE
90
120
150
ns
Output Enable to Output Valid
t
GLQV
t
OE
40
50
55
ns
Chip Select High to Output High Z (1)
t
EHQZ
t
DF
20
30
35
ns
Output Enable High to Output High Z (1)
t
GHQZ
t
DF
20
30
35
ns
Output Hold from Addresses, CS or OE Change,
t
AXQX
t
OH
0
0
0
ns
whichever is First
RESET Low to Read Mode (1)
t
Ready
20
20
20
s
1. Guaranteed by design, not tested.
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
CS
WE
RY/BY
RESET
t
RP
The rising edge of the last WE signal
Entire programming
or erase operations
t
Ready
t
BUSY
AC CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
C to +125
C)
FIG. 2
AC TEST CIRCUIT
AC TEST CONDITIONS
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Parameter
Typ
Unit
Input Pulse Levels
V
IL
= 0, V
IH
= 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
I
Current Source
D.U.T.
C = 50 pf
eff
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
Parameter
Symbol
-90
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
AVAV
t
WC
90
120
150
ns
Write Enable Setup Time
t
WLEL
t
WS
0
0
0
ns
Chip Select Pulse Width
t
ELEH
t
CP
45
50
50
ns
Address Setup Time
t
AVEL
t
AS
0
0
0
ns
Data Setup Time
t
DVEH
t
DS
45
50
50
ns
Data Hold Time
t
EHDX
t
DH
0
0
0
ns
Address Hold Time
t
ELAX
t
AH
45
50
50
ns
Chip Select Pulse Width High
t
EHEL
t
CPH
20
20
20
ns
Duration of Byte Programming Operation (1)
t
WHWH1
300
300
300
s
Sector Erase Time (2)
t
WHWH2
15
15
15
sec
Read Recovery Time
t
GHEL
0
0
0
s
Chip Programming Time
44
44
44
sec
Chip Erase Time (3)
256
256
256
sec
Output Enable Hold Time (4)
t
OEH
10
10
10
ns
NOTES:
1. Typical value for t
WHWH1
is 7
s.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
FIG. 3
RESET TIMING DIAGRAM
WMF2M8-XXX5
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
FIG. 4
AC WAVEFORMS FOR READ OPERATIONS
Addresses
CS
OE
WE
Outputs
High Z
Addresses Stable
t
OE
t
RC
Output Valid
t
CE
t
ACC
t
OH
High Z
t
DF
WMF2M8-XXX5
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