1
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
HI-RELIABILITY PRODUCT
WMF512K8-XXX5
512Kx8 MONOLITHIC FLASH, SMD 5962-96692
FEATURES
s Access Times of 70, 90, 120, 150ns
s Packaging
32 pin, Hermetic Ceramic, 0.600" DIP (Package 300)
32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)
32 pin, Rectangular Ceramic Leadless Chip Carrier
(Package 601)
32 lead Flatpack (Package 220)
s 1,000,000 Erase/Program Cycles Minimum
s Sector Erase Architecture
8 equal size sectors of 64K bytes each
Any combination of sectors can be concurrently
erased. Also supports full chip erase
s Organized as 512Kx8
s Commercial, Industrial and Military Temperature Ranges
s 5 Volt Programming. 5V
10% Supply.
s Low Power CMOS
s Embedded Erase and Program Algorithms
s TTL Compatible Inputs and CMOS Outputs
s Page Program Operation and Internal Program Control Time.
Note: For programming information refer to Flash Programming 4M5
Application Note.
May 1999 Rev. 3
PIN CONFIGURATION FOR WMF512K8-XXX5
A
0
-
18
Address Inputs
I/O
0-7
Data Input/Output
CS
Chip Select
OE
Output Enable
WE
Write Enable
V
CC
+5.0V Power
V
SS
Ground
PIN DESCRIPTION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
V
CC
WE
A17
A14
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
TOP VIEW
32 DIP
32 CSOJ
32 Flatpack
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
4 3 2 1 32 31 30
14 15 16 17 18 19 20
A7
A6
A5
A4
A3
A2
A1
A0
I/O
0
I/O1
I/O2
V
SS
I/O3
I/O4
I/O5
I/O6
A14
A13
A8
A9
A11
OE
A10
CS
I/O7
A12
A15
A16
A18
V
CC
WE
A17
PIN CONFIGURATION FOR WMF512K8-XCLX5
TOP VIEW
32 CLCC
2
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WMF512K8-XXX5
ABSOLUTE MAXIMUM RATINGS (1)
DC CHARACTERISTICS - CMOS COMPATIBLE
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
C to +125
C)
Parameter
Unit
Operating Temperature
-55 to +125
C
Supply Voltage (V
CC
) (1)
-2.0 to +7.0
V
Signal Voltage Range(any pin except A
9
) (2)
-2.0 to +7.0
V
Storage Temperature Range
-65 to +150
C
Lead Temperature (soldering, 10 seconds)
+300
C
Data Retention Mil Temp
20
years
Endurance - erase/program cycles (Mil Temp)
100,000 min
cycles
A
9
Voltage for sector protect (V
ID
) (3)
-2.0 to +14.0
V
Parameter
Symbol
Conditions
Unit
Min
Max
Input Leakage Current
I
LI
V
CC
= 5.5, V
IN
= GND to V
CC
10
A
Output Leakage Current
I
LOx32
V
CC
= 5.5, V
IN
= GND to V
CC
10
A
V
CC
Active Current for Read (1)
I
CC1
CS = V
IL
, OE = V
IH
, f = 5MHz
50
mA
V
CC
Active Current for Program
I
CC2
CS = V
IL
, OE = V
IH
or Erase
(2)
60
mA
V
CC
Standby Current
I
CC4
V
CC
= 5.5, CS = V
IH
, f = 5MHz
1.6
mA
Output Low Voltage
V
OL
I
OL
= 8.0 mA, V
CC
= 4.5
0.45
V
Output High Voltage
V
OH1
I
OH
= -2.5 mA, V
CC
= 4.5
0.85 x V
CC
V
Low V
CC
Lock-Out Voltage
V
LKO
3.2
4.2
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
V
CC
4.5
5.5
V
Input High Voltage
V
IH
2.0
Vcc + 0.5
V
Input Low Voltage
V
IL
-0.5
+0.8
V
Operating Temp. (Mil.)
T
A
-55
+125
C
Operating Temp. (Ind.)
T
A
-40
+85
C
A
9
Voltage for Sector Protect
V
ID
11.5
12.5
V
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,
inputs may overshoot V
SS
to -2.0 V for periods of up to 20ns. Maximum DC
voltage on output and I/O pins is V
CC
+ 0.5V. During voltage transitions,
outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A
9
pin is -0.5V. During voltage transitions, A
9
may overshoot Vss to -2V for periods of up to 20ns. Maximum DC input
voltage on A
9
is +13.5V which may overshoot to 14.0 V for periods up to 20ns.
CAPACITANCE
(T
A
= +25
C)
Parameter
Symbol
Conditions
Max Unit
Address Input capacitance
C
AD
V
I/O
= 0 V, f = 1.0 MHz
15
pF
Output Enable capacitance
C
OE
V
IN
= 0 V, f = 1.0 MHz
15
pF
Write Enable capacitance
C
WE
V
IN
= 0 V, f = 1.0 MHz
15
pF
Chip Select capacitance
C
CS
V
IN
= 0 V, f = 1.0 MHz
15
pF
Data I/O capacitance
C
I/O
V
I/O
= 0 V, f = 1.0 MHz
15
pF
This parameter is guaranteed by design but not tested.
NOTES:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically
is less than 2 mA/MHz, with OE at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
3
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WMF512K8-XXX5
AC CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
C to +125
C)
AC TEST CIRCUIT
AC TEST CONDITIONS
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Parameter
Typ
Unit
Input Pulse Levels
V
IL
= 0, V
IH
= 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
I
Current Source
D.U.T.
C = 50 pf
eff
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
Parameter
Symbol
-70
-90
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
AVAV
t
WC
70
90
120
150
ns
Write Enable Setup Time
t
WLEL
t
WS
0
0
0
0
ns
Chip Select Pulse Width
t
ELEH
t
CP
45
45
50
50
ns
Address Setup Time
t
AVEL
t
AS
0
0
0
0
ns
Data Setup Time
t
DVEH
t
DS
45
45
50
50
ns
Data Hold Time
t
EHDX
t
DH
0
0
0
0
ns
Address Hold Time
t
ELAX
t
AH
45
45
50
50
ns
Chip Select Pulse Width High
t
EHEL
t
CPH
20
20
20
20
ns
Duration of Byte Programming Operation (1)
t
WHWH1
300
300
300
300
s
Sector Erase Time (2)
t
WHWH2
15
15
15
15
sec
Read Recovery Time
t
GHEL
0
0
0
0
ns
Chip Programming Time
11
11
11
11
sec
Chip Erase Time (3)
64
64
64
64
sec
NOTES:
1. Typical value for t
WHWH1
is 7
s.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase time is 8sec.
4
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WMF512K8-XXX5
AC CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS, WE CONTROLLED
(V
CC
= 5.0V, T
A
= -55
C to +125
C)
WF512K32-XXX5
WF512K32-XXX5
AC CHARACTERISTICS READ ONLY OPERATIONS
(V
CC
= 5.0V, T
A
= -55
C to +125
C)
Parameter
Symbol
-70
-90
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
AVAV
t
RC
70
90
120
150
ns
Address Access Time
t
AVQV
t
ACC
70
90
120
150
ns
Chip Select Access Time
t
ELQV
t
CE
70
90
120
150
ns
Output Enable to Output Valid
t
GLQV
t
OE
35
35
50
55
ns
Chip Select to Output High Z (1)
t
EHQZ
t
DF
20
20
30
35
ns
Output Enable High to Output High Z (1)
t
GHQZ
t
DF
20
20
30
35
ns
Output Hold from Address, CS or OE Change,
t
AXQX
t
OH
0
0
0
0
ns
whichever is First
NOTES:
1. Guaranteed by design, but not tested
Parameter
Symbol
-70
-90
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
AVAV
t
WC
70
90
120
150
ns
Chip Select Setup Time
t
ELWL
t
CS
0
0
0
0
ns
Write Enable Pulse Width
t
WLWH
t
WP
45
45
50
50
ns
Address Setup Time
t
AVWH
t
AS
0
0
0
0
ns
Data Setup Time
t
DVWH
t
DS
45
45
50
50
ns
Data Hold Time
t
WHDX
t
DH
0
0
0
0
ns
Address Hold Time
t
WHAX
t
AH
45
45
50
50
ns
Write Enable Pulse Width High
t
WHWL
t
WPH
20
20
20
20
ns
Duration of Byte Programming Operation (1)
t
WHWH1
300
300
300
300
s
Sector Erase Time (2)
t
WHWH2
15
15
15
15
sec
Read Recovery Time before Write
t
GHWL
0
0
0
0
ms
V
CC
Set-up Time
tvcs
50
50
50
50
s
Chip Programming Time
11
11
11
11
sec
Output Enable Setup Time
t
OES
0
0
0
0
ns
Output Enable Hold Time (4)
t
OEH
10
10
10
10
ns
Chip Erase Time (3)
64
64
64
64
sec
NOTES:
1. Typical value for t
WHWH1
is 7
s.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase time is 8sec.
4. For Toggle and Data Polling.
5
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WMF512K8-XXX5
AC WAVEFORMS FOR READ OPERATIONS
Addresses
CS
OE
WE
Outputs
High Z
Addresses Stable
t
OE
t
RC
Output Valid
t
CE
t
ACC
t
OH
High Z
t
DF
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