1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WMS128K8-XXX
n MIL-STD-883 Compliant Devices Available
n Commercial, Industrial and Military Temperature Range
n 5 Volt Power Supply
n Low Power CMOS
n 2V Data Retention Devices Available
(Low Power Version)
n TTL Compatible Inputs and Outputs
128Kx8 MONOLITHIC SRAM, SMD 5962-96691
FEATURES
n Access Times 70, 85, 100, 120ns
n Revolutionary, Center Power/Ground Pinout
JEDEC Approved
32 lead Ceramic SOJ (Package 101)
n Evolutionary, Corner Power/Ground Pinout
JEDEC Approved
32 pin Ceramic DIP (Package 300)
32 lead Ceramic SOJ (Package 101)
32 lead Ceramic Flat Pack (Package 206)
E
VOLUTIONARY
P
INOUT
R
EVOLUTIONARY
P
INOUT
A
0-16
Address Inputs
I/O
0-7
Data Input/Output
CS
Chip Select
OE
Output Enable
WE
Write Enable
V
CC
+5.0V Power
GND
Ground
P
IN
D
ESCRIPTION
32 DIP (C)
32 CSOJ (DE)
32 FLATPACK (FE)
T
OP
V
IEW
32 CSOJ (DR)
March 2003 Rev. 6
T
OP
V
IEW
2
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
White Electronic Designs
WMS128K8-XXX
Parameter
Sym
Conditions
-70
-85
-100
-120
Units
Min
Max
Min
Max
Min
Max
Min
Max
Input Leakage Current
I
LI
V
CC
= 5.5, V
IN
= GND to V
CC
10
10
10
10
A
Output Leakage Current
I
LO
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
10
10
10
10
A
Operating Supply Current
I
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
30
30
30
30
mA
Standby Current
I
SB
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 5.5
5
5
5
5
mA
Output Low Voltage
V
OL
I
OL
= 2.1mA, Vcc = 4.5
0.4
0.4
0.4
0.4
V
Output High Voltage
V
OH
I
OH
= -1.0mA, Vcc = 4.5
2.4
2.4
2.4
2.4
V
A
BSOLUTE
M
AXIMUM
R
ATINGS
T
RUTH
T
ABLE
R
ECOMMENDED
O
PERATING
C
ONDITIONS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
T
A
-55
+125
C
Storage Temperature
T
STG
-65
+150
C
Signal Voltage Relative to GND
V
G
-0.5
Vcc+0.5
V
Junction Temperature
T
J
150
C
Supply Voltage
V
CC
-0.5
7.0
V
Parameter
Symbol
Min
Max
Unit
Supply Voltage
V
CC
4.5
5.5
V
Input High Voltage
V
IH
2.2
V
CC
+ 0.3
V
Input Low Voltage
V
IL
-0.5
+0.8
V
DC C
HARACTERISTICS
(VCC
= 5.0V, GND = 0V, TA = -55C
TO
+125C)
D
ATA
R
ETENTION
C
HARACTERISTICS
(TA
= -55C
TO
+125C)
CS
OE
WE
Mode
Data I/O
Power
H
X
X
Standby
High Z
Standby
L
L
H
Read
Data Out
Active
L
H
H
Out Disable
High Z
Active
L
X
L
Write
Data In
Active
Parameter
Symbol
Conditions
-70
-85
-100
-120
Units
Min
Max
Min
Max
Min
Max
Min
Max
Data Retention
Supply Voltage
V
DR
CS
V
CC
-0.2V
2.0
5.5
2.0
5.5
2.0
5.5
2.0
5.5
V
Data Retention
Current
I
C C D R 1
V
CC
= 3V
1
1
1
1
mA
C
APACITANCE
(TA = +25C)
Parameter
Symbol
Condition
Package
Max
Unit
Input capacitance
C
IN
V
IN
= 0V, f = 1.0MHz
32 Pin CSOJ, DIP,
12
pF
Flat Pack Evolutionary
32 Pin CSOJ Revolutionary
20
pF
Output capicitance
C
OUT
V
OUT
= 0V, f = 1.0MHz
32 Pin CSOJ, DIP,
12
pF
Flat Pack Evolutionary
32 Pin CSOJ Revolutionary
20
pF
This parameter is guaranteed by design but not tested.
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WMS128K8-XXX
Notes:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75
W.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC T
EST
C
IRCUIT
AC T
EST
C
ONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
V
IL
= 0, V
IH
= 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
Parameter
Symbol
-70
-85
-100
-120
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
70
85
100
120
ns
Address Access Time
t
A A
70
85
100
120
ns
Output Hold from Address Change
t
OH
3
3
3
3
ns
Chip Select Access Time
t
ACS
70
85
100
120
ns
Output Enable to Output Valid
t
OE
35
45
50
60
ns
Chip Select to Output in Low Z
t
C L Z
1
3
3
3
3
ns
Output Enable to Output in Low Z
t
OLZ
1
0
0
0
0
ns
Chip Disable to Output in High Z
t
CHZ
1
25
25
35
35
ns
Output Disable to Output in High Z
t
OHZ
1
25
25
35
35
ns
AC C
HARACTERISTICS
(VCC
= 5.0V, TA
= -55C T
O
+125C)
AC C
HARACTERISTICS
(VCC
= 5.0V, TA
= -55C T
O
+125C)
Parameter
Symbol
-70
-85
-100
-120
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
70
85
100
120
ns
Chip Select to End of Write
t
CW
60
75
80
100
ns
Address Valid to End of Write
t
AW
60
75
80
100
ns
Data Valid to End of Write
t
DW
30
35
40
50
ns
Write Pulse Width
t
WP
50
55
70
80
ns
Address Setup Time
t
AS
0
0
0
0
ns
Address Hold Time
t
AH
5
5
5
5
ns
Output Active from End of Write
t
OW
1
5
5
5
5
ns
Write Enable to Output in High Z
t
WHZ
1
25
30
35
35
ns
Data Hold Time
t
DH
0
0
0
0
ns
1. This parameter is guaranteed by design but not tested.
1. This parameter is guaranteed by design but not tested.
4
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
White Electronic Designs
WMS128K8-XXX
WS32K32-XHX
T
IMING
W
AVEFORM
- R
EAD
C
YCLE
W
RITE
C
YCLE
- CS C
ONTROLLED
W
RITE
C
YCLE
- WE C
ONTROLLED
ADDRESS
DATA I/O
READ CYCLE 1 (CS = OE = V
IL
, WE = V
IH
)
t
AA
t
OH
t
RC
DATA VALID
PREVIOUS DATA VALID
ADDRESS
DATA I/O
WRITE CYCLE 1, WE CONTROLLED
t
AW
t
CW
t
AH
t
WP
t
DW
t
WHZ
t
AS
t
OW
t
DH
t
WC
DATA VALID
CS
WE
ADDRESS
DATA I/O
WRITE CYCLE 2, CS CONTROLLED
t
AW
t
AS
t
CW
t
AH
t
WP
t
DH
t
DW
t
WC
CS
WE
DATA VALID
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WMS128K8-XXX
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
P
ACKAGE
101: 32 L
EAD
, C
ERAMIC
SOJ
P
ACKAGE
206: 32 L
EAD
, C
ERAMIC
F
LAT
P
ACK
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
1.27 (0.050) TYP
21.1 (0.830) 0.25 (0.010)
19.1 (0.750) TYP
11.23 (0.442)
0.30 (0.012)
3.96 (0.156) MAX
0.2 (0.008)
0.05 (0.002)
9.55 (0.376) 0.25 (0.010)
1.27 (0.050) 0.25 (0.010)
0.89 (0.035)
Radius TYP
10.41 (0.410)
0.13 (0.005)
3.18 (0.125) MAX
0.127 (0.005)
+ 0.05 (0.002)
0.025 (0.001)
PIN 1
IDENTIFIER
1.27 (0.050) TYP
7.87 (0.310)
0.13 (0.005)
19.05 (0.750) TYP
6.35 (0.250)
MIN
0.43 (0.017)
0.05 (0.002)
20.83 (0.820)
0.25 (0.010)
PDF 
ZIP