1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WMS256K16-XXX
White Electronic Designs
256Kx16 MONOLITHIC SRAM, SMD 5962-96902
FEATURES
Access Times 17, 20, 25, 35ns
MIL-STD-883 Compliant Devices Available
Packaging
44 pin Ceramic SOJ (Package 102)
44 lead Ceramic Flatpack (Package 225)
44 lead Formed Ceramic Flatpack
Organized as 256Kx16
Data Byte Control:
Lower Byte (LB) = I/O
1-8
Upper Byte (UB) = I/O
9-16
2V Minimum Data Retention for battery back up
operation (WMS256K16L-XXX Low Power Version
Only)
Commercial, Industrial and Military Temperature
Range
5 Volt Power Supply
Low Power CMOS
TTL Compatible Inputs and Outputs
P
IN
C
ONFIGURATION
FOR
WMS256K16-XXX
A
0-17
Address Inputs
LB
Lower-Byte Control (I/O
1-8
)
UB
Upper-Byte Control (I/O
9-16
)
I/O
1-16
Data Input/Output
CS
Chip Select
OE
Output Enable
WE
Write Enable
V
CC
+5.0V Power
GND
Ground
NC
No Connection
P
IN
D
ESCRIPTION
44 CSOJ
44 F
LATPAC
K
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A0
A1
A2
A3
A4
CS
I/O1
I/O2
I/O3
I/O4
V
CC
GND
I/O5
I/O6
I/O7
I/O8
WE
A5
A6
A7
A8
A9
A17
A16
A15
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
GND
V
CC
I/O12
I/O11
I/O10
I/O9
NC
A14
A13
A12
A11
A10
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
October 2002 Rev. 5
TOP VIEW
2
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
WMS256K16-XXX
White Electronic Designs
T
RUTH
T
ABLE
CS
WE
OE
LB
UB
Mode
Data I/O
Power
I/O
1-8
I/O
9-16
H
X
X
X
X
Not Select
High Z
High Z
Standby
L
H
H
X
X
Output Disable
High Z
High Z
Active
L
X
X
H
H
L
H
Data Out
High Z
L
H
L
H
L
Read
High Z
Data Out
Active
L
L
Data Out
Data Out
L
H
Data In
High Z
L
L
X
H
L
Write
High Z
Data In
Active
L
L
Data In
Data In
A
BSOLUTE
M
AXIMUM
R
ATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
T
A
-55
+125
C
Storage Temperature
T
STG
-65
+150
C
Signal Voltage Relative to GND V
G
-0.5
Vcc+0.5
V
Junction Temperature
T
J
150
C
Supply Voltage
V
CC
-0.5
7.0
V
R
ECOMMENDED
O
PERATING
C
ONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
V
CC
4.5
5.5
V
Input High Voltage
V
IH
2.2
V
CC
+ 0.3
V
Input Low Voltage
V
IL
-0.3
+0.8
V
Operating Temp. (Mil.)
T
A
-55
+125
C
Parameter
Symbol
Condition
Max Unit
Input capacitance
C
IN
V
IN
= 0V, f = 1.0MHz
20
pF
Output capicitance
C
OUT
V
OUT
= 0V, f = 1.0MHz
20
pF
This parameter is guaranteed by design but not tested.
C
APACITANCE
(T
A
= +25C)
DC C
HARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55C
TO
+125C)
Parameter
Sym
Conditions
Units
Min
Max
Input Leakage Current
I
LI
V
CC
= 5.5, V
IN
= GND to V
CC
10
A
Output Leakage Current
I
LO
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
10
A
Operating Supply Current
I
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
275
mA
Standby Current
I
SB
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 5.5
17
mA
Output Low Voltage
V
OL
I
OL
= 8mA, V
CC
= 4.5
0.4
V
Output High Voltage
V
OH
I
OH
= -4.0mA, V
CC
= 4.5
2.4
V
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
Parameter
Symbol
Conditions
Units
Min
Typ
Max
Data Retention Supply Voltage
V
DR
CS V
CC
-0.2V
2.0
5.5
V
Data Retention Current
I
CCDR1
V
CC
= 3V
1.0
8.0
mA
LOW POWER D
ATA
R
ETENTION
C
HARACTERISTICS
(WMS256K16L-XXX ONLY)
(T
A
= -55C
TO
+125C)
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WMS256K16-XXX
White Electronic Designs
I
Current Source
D.U.T.
C = 50 pf
eff
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
Notes:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75 W.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC T
EST
C
IRCUIT
AC T
EST
C
ONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
V
IL
= 0, V
IH
= 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
AC C
HARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55C
TO
+125C)
Parameter
Symbol
-17
-20
-25
-35
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
17
20
25
35
ns
Address Access Time
t
AA
17
20
25
35
ns
Output Hold from Address Change
t
OH
0
0
0
0
ns
Chip Select Access Time
t
ACS
17
20
25
35
ns
Output Enable to Output Valid
t
OE
10
12
15
20
ns
Chip Select to Output in Low Z
t
CLZ
1
2
5
5
5
ns
Output Enable to Output in Low Z
t
OLZ
1
0
0
0
0
ns
Chip Disable to Output in High Z
t
CHZ
1
9
10
12
15
ns
Output Disable to Output in High Z
t
OHZ
1
9
10
12
15
ns
LB, UB Access Time
t
BA
10
12
14
17
ns
LB, UB Enable to Low Z Output
t
BLZ
1
0
0
0
0
ns
LB, UB Disable to High Z Output
t
BHZ
1
9
10
12
15
ns
1. This parameter is guaranteed by design but not tested.
AC C
HARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55C
TO
+125C)
Parameter
Symbol
-17
-20
-25
-35
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
17
20
25
35
ns
Chip Select to End of Write
t
CW
14
17
20
25
ns
Address Valid to End of Write
t
AW
14
17
20
25
ns
Data Valid to End of Write
t
DW
10
12
15
20
ns
Write Pulse Width
t
WP
14
17
20
25
ns
Address Setup Time
t
AS
0
0
0
0
ns
Address Hold Time
t
AH
2
2
2
2
ns
Output Active from End of Write
t
OW
1
0
0
0
0
ns
Write Enable to Output in High Z
t
WHZ
1
9
10
10
15
ns
Data Hold Time
t
DH
0
0
0
0
ns
LB, UB Valid to End of Write
t
BW
14
17
20
25
ns
1. This parameter is guaranteed by design but not tested.
4
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
WMS256K16-XXX
White Electronic Designs
WS32K32-XHX
TIMING WAVEFORM - READ CYCLE
WRITE CYCLE - CS CONTROLLED
WRITE CYCLE - WE CONTROLLED
ADDRESS
DATA I/O
READ CYCLE 1 (CS = OE = V
IL
, UB or LB = V
IL
, WE = V
IH
)
t
AA
t
OH
t
RC
DATA VALID
PREVIOUS DATA VALID
ADDRESS
DATA I/O
READ CYCLE 2 (WE = V
IH
)
t
AA
t
ACS
t
OE
t
CLZ
t
OLZ
t
OHZ
t
RC
DATA VALID
HIGH IMPEDANCE
CS
OE
t
CHZ
LB, UB
t
BHZ
t
BA
t
BLZ
ADDRESS
DATA I/O
WRITE CYCLE 1, WE CONTROLLED
t
AW
t
CW
t
AH
t
WP
t
DW
t
WHZ
t
AS
t
OW
t
DH
t
WC
DATA VALID
CS
WE
t
BW
LB, UB
ADDRESS
DATA I/O
WRITE CYCLE 2, CS CONTROLLED
t
AW
t
AS
t
CW
t
AH
t
WP
t
DH
t
DW
t
WC
CS
WE
DATA VALID
t
BW
LB, UB
WRITE CYCLE - LB, UB CONTROLLED
ADDRESS
DATA I/O
WRITE CYCLE 3, LB, UB CONTROLLED
t
AW
t
AS
t
CW
t
AH
t
WP
t
DH
t
DW
t
WC
CS
WE
DATA VALID
t
BW
LB, UB
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WMS256K16-XXX
White Electronic Designs
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 102: 44 LEAD, CERAMIC SOJ
1.27 (0.050) TYP
28.70 (1.13)
0.25 (0.010)
26.7 (1.050) TYP
11.3 (0.446)
0.2 (0.009)
3.96 (0.156) MAX
0.2 (0.008)
0.05 (0.002)
9.55 (0.376)
0.25 (0.010)
1.27 (0.050)
0.25 (0.010)
0.89 (0.035)
Radius TYP
PACKAGE 225: 44 LEAD, CERAMIC FLAT PACK
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
28.45 (1.120)
0.26 (0.010)
12.95 (0.510)
0.13 (0.005)
2.60 (0.102)
MAX
0.14 (0.006)
0.05 (0.002)
1.27 (0.050) TYP
26.67 (1.050) TYP
10.16 (0.400)
0.51 (0.020)
0.43 (0.017)
0.05 (0.002)
6
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
WMS256K16-XXX
White Electronic Designs
W M S 256K16 X - XXX X X X
ORDERING INFORMATION
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
M = Military Screened
-55C to +125C
I = Industrial
-40C to +85C
C = Commercial
0C to +70C
PACKAGE:
DL = 44 Lead Ceramic SOJ (Package 102)
FL = 44 Lead Ceramic Flatpack (Package 225)
FG = 44 Lead Formed Ceramic Flatpack
ACCESS TIME (ns)
IMPROVEMENT MARK:
Blank = Standard Power
L = Low Power Data Retention
ORGANIZATION, 256K x 16
SRAM
MONOLITHIC
WHITE ELECTRONIC DESIGNS CORP.
PACKAGE 211: 44 LEAD FORMED, CERAMIC FLAT PACK
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
12.95 (0.510)
0.13 (0.005)
3.81 (0.150)
MAX
0.14 (0.006)
0.05 (0.002)
PIN 1
IDENTIFIER
1.27 (0.050) TYP
26.67 (1.050) TYP
1.52 (0.060) TYP
0.43 (0.017)
0.05 (0.002)
+
+
1.90 (0.075) TYP
28.45 (1.120)
0.26 (0.010)
0.46 (0.030) TYP
16.76 (0.660)
0.13 (0.005)
7
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WMS256K16-XXX
White Electronic Designs
DEVICE TYPE
SPEED
PACKAGE
SMD NO.
256K x 16 SRAM Monolithic
35ns
44 lead SOJ (DL)
5962-96902 01HMX
256K x 16 SRAM Monolithic
25ns
44 lead SOJ (DL)
5962-96902 02HMX
256K x 16 SRAM Monolithic
20ns
44 lead SOJ (DL)
5962-96902 03HMX
256K x 16 SRAM Monolithic
17ns
44 lead SOJ (DL)
5962-96902 04HMX
256K x 16 SRAM Monolithic
35ns
44 lead Flatpack (FL)
5962-96902 01HNX
256K x 16 SRAM Monolithic
25ns
44 lead Flatpack (FL)
5962-96902 02HNX
256K x 16 SRAM Monolithic
20ns
44 lead Flatpack (FL)
5962-96902 03HNX
256K x 16 SRAM Monolithic
17ns
44 lead Flatpack (FL)
5962-96902 04HNX
256K x 16 SRAM Monolithic
35ns
44 lead Formed Flatpack (FG)
5962-96902 01HTX
256K x 16 SRAM Monolithic
25ns
44 lead Formed Flatpack (FG)
5962-96902 02HTX
256K x 16 SRAM Monolithic
20ns
44 lead Formed Flatpack (FG)
5962-96902 03HTX
256K x 16 SRAM Monolithic
17ns
44 lead Formed Flatpack (FG)
5962-96902 04HTX
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