1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WS128K32-XG2TXE
December 2000
Rev. 0
ADVANCED*
128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLLERANT
TTL Compatible Inputs and Outputs
Built in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation
Weight
WS128K32-XG2TXE 8 grams typical
Radiation tolerant with epitaxial layer on die.
6T memory cells provide excellent protection
against soft errors
* This product is under development, is not qualifi ed or characterized and is subject to
change or cancellation without notice.
FEATURES
Access Times of 35, 45, 55ns
Packaging
68 lead, 22.4mm CQFP (G2T), 4.57mm (0.180"),
(Package 509)
Organized as 128Kx32; User Confi gurable as
256Kx16 or 512Kx8
Low Power Data Retention
Commercial,
Industrial
and
Military
Temperature
Ranges
5V
Power
Supply
Low
Power
CMOS
Pin Description
I/O
0-31
Data Inputs/Outputs
A
0-16
Address Inputs
WE
1-4
#
Write Enables
CS
1-4
#
Chip Selects
OE#
Output Enable
V
CC
Power Supply
GND Ground
NC
Not Connected
Block Diagram
Top View
FIGURE 1 PIN CONFIGURATION FOR WS128K32N-XG2TXE
WE
1
# CS
1
#
CS
2
#
CS
3
#
CS
4
#
WE
4
#
WE
3
#
WE
2
#
128K x 8
128K x 8
128K x 8
128K x 8
OE#
A
0-16
I/O
0-7
I/O
24-31
I/O
16-23
I/O
8-15
8
8
8
8
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
V
CC
A
11
A
12
A
13
A
14
A
15
A
16
CS
1
#
OE#
CS
2
#
NC
WE
2
#
WE
3
#
WE
4
#
NC
NC
NC
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
3
#
GND
CS
4
#
WE
1
#
A
6
A
7
A
8
A
9
A
10
V
CC
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
9 8 7 6 5 4 3 2 1 68 67
66 65
64
63
62 61
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
The White 68 lead G2T CQFP fi lls
the same fi t and function as the
JEDEC 68 lead CQFJ or 68 PLCC.
But the G2T has the TCE and lead
inspection advantage of the CQFP
form.
2
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WS128K32-XG2TXE
December 2000
Rev. 0
ADVANCED
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
T
A
-55 +125
C
Storage Temperature
T
STG
-65
+150
C
Signal Voltage Relative to GND
V
G
-0.5
V
CC
+0.5
V
Junction Temperature
T
J
150
C
Supply Voltage
V
CC
-0.5
7.0
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
V
CC
4.5
5.5
V
Input High Voltage
V
IH
2.2
V
CC
+ 0.3
V
Input Low Voltage
V
IL
-0.3
+0.8
V
Opertating Temp. (MIL)
T
A
-55
+125
C
TRUTH TABLE
CS#
OE#
WE#
Mode
Data I/O
Power
H
X
X
Standby
High Z
Standby
L
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
H
Out Disable
High Z
Active
CAPACITANCE
T
A
= +25C
Parameter
Symbol
Conditions Max Unit
OE# capacitance
C
OE
V
IN
= 0V, f = 1.0 MHz
50
pF
WE
1-4
# capacitance
CQFP G2T
C
WE
V
IN
= 0V, f = 1.0 MHz
20
pF
CS
1-4
# capacitance
C
CS
V
IN
= 0V, f = 1.0 MHz
20
pF
Data# I/O capacitance
C
I/O
V
I/O
= 0V, f = 1.0 MHz
20
pF
Address input capacitance
C
AD
V
IN
= 0V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
V
CC
= 5.0V, V
SS
= 0V, -55C T
A
+125C
Parameter
Sym
Conditions
Min
Max
Units
Input Leakage Current
I
LI
V
CC
= 5.5, V
IN
= GND to V
CC
10
A
Output Leakage Current
I
LO
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
10
A
Operating Supply Current
I
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
520
mA
Standby Current
I
SB
CS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
8
mA
Output Low Voltage
V
OL
I
OL
= 8mA, V
CC
= 4.5
0.4
V
Output High Voltage
V
OH
I
OH
= -40mA, V
CC
= 4.5
2.4
V
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
DATA RETENTION CHARACTERISTICS
-55C T
A
+125C
Characteristic
Sym
Conditions
Min
Max
Units
Data Retention Voltage
Data Retention Quiescent Current
V
CC
I
CCDR
V
CC
= 2.0V
CS V
CC
-0.2V
2
--
--
1
V
mA
Chip Disable to Data Retention Time (1)
Operation Recovery Time (1)
T
CDR
T
R
V
IN
V
CC
-0.2V
or V
IN
0.2V
0
T
RC
--
--
ns
ns
NOTE: Parameter guaranteed, but not tested.
RADIATION CHARACTERISTICS
Total Dose (TM1019.5)
Latch-up
25C
V
CC
Max
(MeV/mg/cm2)
SEU LET
Threshold
(V
CC
MIN)
(MeV/mg/cm2)
Cross
Section
/BIT
(E-6 cm2)
Functional
Parametric
(Krads)
(Krads)
Typical Iccsb (mA
)
30
30
1.2
>100
2
0.2
3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WS128K32-XG2TXE
December 2000
Rev. 0
ADVANCED
I
Current Source
D.U.T.
C = 50 pf
eff
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
AC CHARACTERISTICS
V
CC
= 5.0V, GND = 0V, -55C T
A
+125C
Parameter
Write Cycle
Symbol
-35
-45
-55
Units
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
35
45
55
ns
Chip Select to End of Write
t
CW
25
35
45
ns
Address Valid to End of Write
t
AW
25
35
45
ns
Data Valid to End of Write
t
DW
20
25
25
ns
Write Pulse Width
t
WP
25
35
45
ns
Address Setup Time
t
AS
0
0
0
ns
Address Hold Time
t
AH
0
0
0
ns
Output Active from End of Write
t
OW
1
0
0
0
ns
Write Enable to Output in High Z
t
WHZ
1
10
15
20
ns
Data Hold Time
t
DH
0
0
0
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
V
CC
= 5.0V, GND = 0V, -55C T
A
+125C
Parameter
Read Cycle
Symbol
-35
-45
-55
Units
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
35
45
55
ns
Address Access Time
t
AA
35
45
55
ns
Output Hold from Address Change
t
OH
3
3
3
ns
Chip Select Access Time
t
ACS
35
45
55
ns
Output Enable to Output Valid
t
OE
15
20
30
ns
Chip Select to Output in Low Z
t
CLZ
1
3
3
3
ns
Output Enable to Output in Low Z
t
OLZ
1
0
0
0
ns
Chip Disable to Output in High Z
t
CHZ
1
20
20
20
ns
Output Disable to Output in High Z
t
OHZ
1
12
15
20
ns
1. This parameter is guaranteed by design but not tested.
FIGURE 2 AC TEST CIRCUIT
Notes:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC Test Conditions
Parameter
Typ
Unit
Input Pulse Levels
V
IL
= 0, V
IH
= 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WS128K32-XG2TXE
December 2000
Rev. 0
ADVANCED
WS32K32-XHX
READ CYCLE 1, (CS# = OE# = V
IL
, WE# = V
IH
)
READ CYCLE 2 (WE# = V
IH
)
CS#
OE#
WRITE CYCLE 1, WE# CONTROLLED
CS#
WE#
WRITE CYCLE 2, CS# CONTROLLED
CS#
WE#
FIGURE 3 TIMING WAVEFORM - READ CYCLE
FIGURE 5 WRITE CYCLE - CS# CONTROLLED
FIGURE 4 WRITE CYCLE - WE# CONTROLLED
5
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WS128K32-XG2TXE
December 2000
Rev. 0
ADVANCED
PACKAGE 510: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2T)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
The White 68 lead G2T CQFP
fi lls the same fi t and function
as the JEDEC 68 lead CQFJ
or 68 PLCC. But the G2T has
the TCE and lead inspection
advantage of the CQFP form.
0.38 (0.015) 0.05 (0.002)
0.27 (0.011) 0.04 (0.002)
25.15 (0.990) 0.26 (0.010) SQ
1.27
(0.050)
TYP
24.03 (0.946)
0.26 (0.010)
22.36 (0.880) 0.26 (0.010) SQ
20.3 (0.800) REF
4.57 (0.180) MAX
0.19 (0.007)
0.06 (0.002)
23.87
(0.940) REF
1.0 (0.040)
0.127 (0.005)
0.25 (0.010) REF
1 / 7
R 0.25
(0.010)
DETAIL A
SEE DETAIL "A"
Pin 1
0.940"
TYP
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