1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WS128K32V-XXX
128Kx32 3.3V SRAM MODULE
n Organized as 128Kx32; User Configurable as
256Kx16 or 512Kx8
n Commercial, Industrial and Military Temperature
Ranges
n 3.3 Volt Power Supply
n Low Power CMOS
n TTL Compatible Inputs and Outputs
n Built-in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation
n Weight
WS128K32V-XG2UX - 8 grams typical
WS128K32NV-XH1X - 13 grams typical
WS128K32V-XG1UX
1
- 5 grams typical
WS128K32V-XG1TX - 5 grams typical
*This data sheet describes a product under development, not fully
characterized, and is subject to change without notice.
**Commercial and Industrial only.
Note 1: Package Not Recommended For New Design
FEATURES
n Access Times of 15**, 17, 20, 25, 35ns
n MIL-STD-883 Compliant Devices Available
n Low Voltage Operation
n Packaging
66-pin, PGA Type, 1.075 inch square Hermetic
Ceramic HIP (Package 400)
68 lead, Hermetic CQFP (G2U), 22.4mm (0.880
inch) square (Package 510), 3.56mm (0.140
inch) high.
68 lead, Hermetic CQFP (G1U)
1
, 23.9mm (0.940
inch) square (Package 519), 3.56mm (0.140
inch) high.
68 lead, Hermetic CQFP (G1T), 23.9mm (0.940
inch) square (Package 524), 4.06mm (0.160
inch) high.
F
IG
. 1 P
IN
C
ONFIGURATION
F
OR
WS128K32NV-XH1X
P
IN
D
ESCRIPTION
I/O
0-31
Data Inputs/Outputs
A
0-16
Address Inputs
WE
1-4
Write Enables
CS
1-4
Chip Selects
OE
Output Enable
V
CC
Power Supply
GND
Ground
NC
Not Connected
T
OP
V
IEW
B
LOCK
D
IAGRAM
April 2003 Rev. 4
PRELIMINARY*
2
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
White Electronic Designs
WS128K32V-XXX
P
IN
D
ESCRIPTION
B
LOCK
D
IAGRAM
F
IG
. 2 P
IN
C
ONFIGURATION
F
OR
WS128K32V-XG1TX, WS128K32V-XG2UX
AND
WS128K32V-XG1UX
1
T
OP
V
IEW
I/O
0-31
Data Inputs/Outputs
A
0-16
Address Inputs
WE
1-4
Write Enables
CS
1-4
Chip Selects
OE
Output Enable
V
CC
Power Supply
GND
Ground
NC
Not Connected
Note 1: Package Not Recommended For New Design
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WS128K32V-XXX
C
APACITANCE
(TA = +25C)
T
RUTH
T
ABLE
A
BSOLUTE
M
AXIMUM
R
ATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
T
A
-55
+125
C
Storage Temperature
T
STG
-65
+150
C
Signal Voltage Relative to GND
V
G
-0.5
4.6
V
Junction Temperature
T
J
150
C
Supply Voltage
V
CC
-0.5
5.5
V
CS
OE
WE
Mode
Data I/O
Power
H
X
X
Standby
High Z
Standby
L
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
H
Out Disable
High Z
Active
R
ECOMMENDED
O
PERATING
C
ONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
V
CC
3.0
3.6
V
Input High Voltage
V
IH
2.2
V
CC
+ 0.3
V
Input Low Voltage
V
IL
-0.3
+0.8
V
DC C
HARACTERISTICS
(V
CC
= 3.3V 0.3V, V
SS
= 0V, T
A
= -55C
TO
+125C)
Parameter
Sym
Conditions
Units
Min
Max
Input Leakage Current
I
LI
V
IN
= GND to V
CC
10
A
Output Leakage Current
I
LO
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
10
A
Operating Supply Current (x 32 Mode)
I
CC
x 32
CS = V
IL
, OE = V
IH
, f = 5MHz
500
mA
Standby Current
I
SB
CS = V
IH
, OE = V
IH
, f = 5MHz
32
mA
Output Low Voltage
V
OL
I
OL
= 8mA
0.4
V
Output High Voltage
V
OH
I
OH
= -4.0mA
2.4
V
Parameter
Symbol
Conditions
Max
Unit
OE capacitance
C
OE
V
IN
= 0 V, f = 1.0 MHz
50
pF
WE
1-4
capacitance
C
WE
V
IN
= 0 V, f = 1.0 MHz
pF
HIP (PGA)
20
CQFP G2U/G1U/G1T
20
CS
1-4
capacitance
C
CS
V
IN
= 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
C
I/O
V
I/O
= 0 V, f = 1.0 MHz
20
pF
Address input capacitance
C
AD
V
IN
= 0 V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
4
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
White Electronic Designs
WS128K32V-XXX
F
IG
. 3 AC T
EST
C
IRCUIT
Notes:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75W.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC T
EST
C
ONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
V
IL
= 0, V
IH
= 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
AC C
HARACTERISTICS
(V
CC
= 3.3V, T
A
= -55C
TO
+125C)
Parameter
Symbol
-15*
-17
-20
-25
-35
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
15
17
20
25
35
n s
Address Access Time
t
A A
15
17
20
25
35
n s
Output Hold from Address Change
t
OH
0
0
0
0
0
n s
Chip Select Access Time
t
A C S
15
17
20
25
35
n s
Output Enable to Output Valid
t
OE
10
11
12
15
20
n s
Chip Select to Output in Low Z
t
CLZ
1
5
5
5
5
5
n s
Output Enable to Output in Low Z
t
OLZ
1
5
5
5
5
5
n s
Chip Disable to Output in High Z
t
CHZ
1
8
9
10
12
15
n s
Output Disable to Output in High Z
t
OHZ
1
8
9
10
12
15
n s
AC C
HARACTERISTICS
(V
CC
= 3.3V, T
A
= -55C
TO
+125C)
Parameter
Symbol
-15*
-17
-20
-25
-35
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
15
17
20
25
35
n s
Chip Select to End of Write
t
CW
13
14
15
20
30
n s
Address Valid to End of Write
t
AW
13
14
15
20
30
n s
Data Valid to End of Write
t
DW
10
11
12
15
18
n s
Write Pulse Width
t
WP
13
14
15
20
30
n s
Address Setup Time
t
A S
0
0
0
0
0
n s
Address Hold Time
t
A H
0
0
0
0
0
n s
Output Active from End of Write
t
OW
1
5
5
5
5
5
n s
Write Enable to Output in High Z
t
WHZ
1
8
9
10
10
15
n s
Data Hold Time
t
DH
0
0
0
0
0
n s
1. This parameter is guaranteed by design but not tested.
* Commercial and Industrial only.
1. This parameter is guaranteed by design but not tested.
* Commercial and Industrial only.
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WS128K32V-XXX
WS32K32-XHX
F
IG
. 4 T
IMING
W
AVEFORM
- R
EAD
C
YCLE
F
IG
. 6 W
RITE
C
YCLE
- CS C
ONTROLLED
F
IG
. 5 W
RITE
C
YCLE
- WE C
ONTROLLED
ADDRESS
DATA I/O
READ CYCLE 1 (CS = OE = V
IL
, WE = V
IH
)
t
AA
t
OH
t
RC
DATA VALID
PREVIOUS DATA VALID
ADDRESS
DATA I/O
WRITE CYCLE 1, WE CONTROLLED
t
AW
t
CW
t
AH
t
WP
t
DW
t
WHZ
t
AS
t
OW
t
DH
t
WC
DATA VALID
CS
WE
ADDRESS
DATA I/O
WRITE CYCLE 2, CS CONTROLLED
t
AW
t
AS
t
CW
t
AH
t
WP
t
DH
t
DW
t
WC
CS
WE
DATA VALID
6
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
White Electronic Designs
WS128K32V-XXX
P
ACKAGE
400: 66 P
IN
, PGA T
YPE
, C
ERAMIC
H
EX
-I
N
-L
INE
P
ACKAGE
, H
IP
(H1)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
7
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WS128K32V-XXX
P
ACKAGE
510: 68 L
EAD
, L
OW
P
ROFILE
C
ERAMIC
Q
UAD
F
LAT
P
ACK
, CQFP (G2U)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
P
ACKAGE
519: 68 L
EAD
, C
ERAMIC
Q
UAD
F
LAT
P
ACK
, CQFP (G1U)
1
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Note 1: Package Not Recommended For New Design
8
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
White Electronic Designs
WS128K32V-XXX
P
ACKAGE
524: 68 L
EAD
, C
ERAMIC
Q
UAD
F
LAT
P
ACK
, L
OW
P
ROFILE
CQFP (G1T)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
25.27 (0.995)
0.13 (0.005) SQ
23.88 (0.940)
0.25 (0.010) SQ
0.38 (0.015)
0.05 (0.002)
20.3 (0.800) REF
1.27 (0.050)
4.06 (0.160) MAX
0.25 (0.010) MAX
SEE DETAIL "A"
0.84 (0.033) REF
DETAIL A
0.83 (0.033)
0.32 (0.013)
9
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WS128K32V-XXX
O
RDERING
I
NFORMATION
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
M = Military Screened -55C to +125C
I = Industrial
-40C to +85C
C = Commercial
0C to +70C
PACKAGE TYPE:
H1 = Ceramic Hex-In-line Package, HIP (Package 400)
G2U = 22.4mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 510)
G1U
1
= 23.9mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 519)
G1T = 23.9mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 524)
ACCESS TIME (ns)
LOW VOLTAGE SUPPLY 3.3V 10%
IMPROVEMENT MARK:
N = No Connect at pins 8, 21, 28, 39 in HIP for upgrade. (H1 only)
ORGANIZATION, 128Kx32
User configurable as 256Kx16 or 512Kx8
SRAM
WHITE ELECTRONIC DESIGNS CORP.
W S 128K 32 X V - XXX X X X
Note 1: Package Not Recommended For New Design
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