White Electronic Designs Corporation · (602) 437-1520 · www.whiteedc.com

White Electronic Designs

WS128K32-XXX

128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595

Commercial, Industrial and Military Temperature
Ranges

5 Volt Power Supply

Low Power CMOS

TTL Compatible Inputs and Outputs

Built in Decoupling Caps and Multiple Ground Pins

for Low Noise Operation

Weight:

WS128K32-XG1UX

- 5 grams typical

WS128K32-XG1TX - 5 grams typical
WS128K32-XG2UX - 8 grams typical
WS128K32-XG2LX - 8 grams typical
WS128K32-XH1X - 13 grams typical
WS128K32-XG4TX

- 20 grams typical

All devices are upgradeable to 512Kx32

Note 1: Package Not Recommended For New Design

FEATURES

Access Times of 15, 17, 20, 25, 35, 45, 55ns

MIL-STD-883 Compliant Devices Available

Packaging

· 66 pin, PGA Type, 1.075" square, Hermetic Ce

ramic HIP (Package 400)

· 68 lead, 40mm CQFP (G4T)

, 3.56mm (0.140")

(Package 502)
· 68 lead, 22.4mm CQFP (G2U), 3.56mm (0.140"),
(Package 510)
· 68 lead, 22.4mm (0.880") square, CQFP (G2L),
5.08mm (0.200") high, (Package 528).
· 68 lead, 23.9mm Low Profile CQFP (G1U)

3.57mm (0.140"), (Package 519)
· 68 lead, 23.9mm Low Profile CQFP (G1T), 4.06
mm (0.160"), (Package 524)

Organized as 128Kx32; User Configurable as
256Kx16 or 512Kx8

ESCRIPTION

I/O

0-31

Data Inputs/Outputs

0-16

Address Inputs

1-4

Write Enables

1-4

Chip Selects

Output Enable

Power Supply

GND

Ground

Not Connected

IEW

LOCK

IAGRAM

FIG. 1

October 2003 Rev. 14

ONFIGURATION

WS128K32N-XH1X

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White Electronic Designs

WS128K32-XXX

LOCK

IAGRAM

FIG. 2

FIG. 3

IEW

LOCK

IAGRAM

ESCRIPTION

I/O

0-31

Data Inputs/Outputs

0-16

Address Inputs

Write Enables

1-4

Chip Selects

Output Enable

Power Supply

GND

Ground

Not Connected

ESCRIPTION

I/O

0-31

Data Inputs/Outputs

0-16

Address Inputs

1-4

Write Enables

1-4

Chip Selects

Output Enable

Power Supply

GND

Ground

Not Connected

ONFIGURATION

WS128K32-XG4TX

ONFIGURATION

WS128K32-XG2UX, WS128K32-XG2LX, WS128K32-XG1TX

AND

WS128K32-XG1UX

Note 1: Package Not Recommended For New Design

White Electronic Designs Corporation · (602) 437-1520 · www.whiteedc.com

White Electronic Designs

WS128K32-XXX

APACITANCE

(TA = +25°C)

Parameter

Symbol

Conditions

Max

Unit

OE capacitance

= 0V, f = 1.0 MHz

1-4

capacitance

= 0V, f = 1.0 MHz

HIP (PGA) H1

CQFP G4T

CQFP G2U/G2L

CQFP G1U/G1T

1-4

capacitance

= 0V, f = 1.0 MHz

Data I/O capacitance

I/O

= 0V, f = 1.0 MHz

Address input capacitance

= 0V, f = 1.0 MHz

This parameter is guaranteed by design but not tested.

RUTH

ABLE

BSOLUTE

AXIMUM

ATINGS

Parameter

Symbol

Min

Max

Unit

Operating Temperature

-55

+125

°C

Storage Temperature

STG

-65

+150

°C

Signal Voltage Relative to GND

-0.5

Vcc+0.5

Junction Temperature

150

°C

Supply Voltage

-0.5

7.0

Mode

Data I/O

Power

Standby

High Z

Standby

Read

Data Out

Active

Write

Data In

Active

Out Disable

High Z

Active

ECOMMENDED

PERATING

ONDITIONS

Parameter

Symbol

Min

Max

Unit

Supply Voltage

4.5

5.5

Input High Voltage

2.2

+ 0.3

Input Low Voltage

-0.3

+0.8

Operating Temp. (Mil.)

-55

+125

°C

DC C

HARACTERISTICS

(VCC

= 5.0V, GND = 0V, TA = -55°C

+125°C)

Parameter

Sym

Conditions

-15

-17

-20

-25

Units

Min

Max

Min

Max

Min

Max

Min

Max

Input Leakage Current

= 5.5, V

= GND to V

µA

Output Leakage Current

CS = V

, OE = V

, V

OUT

= GND to V

µA

Operating Supply Current

CS = V

, OE = V

, f = 5MHz, Vcc = 5.5

600

Standby Current

CS = V

, OE = V

, f = 5MHz, Vcc = 5.5

Output Low Voltage

= 8mA, V

= 4.5

0.4

Output High Voltage

= -4.0mA, V

= 4.5

2.4

Parameter

Sym

Conditions

-35

-45

-55

Units

Min

Max

Min

Max

Min

Max

Input Leakage Current

= 5.5, V

= GND to V

µA

Output Leakage Current

CS = V

, OE = V

, V

OUT

= GND to V

µA

Operating Supply Current

CS = V

, OE = V

, f = 5MHz, Vcc = 5.5

600

Standby Current

CS = V

, OE = V

, f = 5MHz, Vcc = 5.5

Output Low Voltage

= 2.1mA, V

= 4.5

0.4

Output High Voltage

= -1.0mA, V

= 4.5

2.4

NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V

Characteristic

Sym

Conditions

Min

Typ

Max

Units

Data Retention Voltage

= 2.0V

Data Retention Quiescent Current

ICCDR

VCC -0.2V

Chip Disable to Data Retention Time (1)

CDR

-0.2V

Operation Recovery Time (1)

or V

- 0.2V

NOTE: Parameter guaranteed, but not tested.

ATA

RETENTION

HARACTERISTICS

WS128K32L-XXX O

NLY

)

(TA = -55°C

+125°C), (TA = -40°C

+85°C)

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White Electronic Designs

WS128K32-XXX

FIG. 4

Notes:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75

VZ is typically the midpoint of VOH and VOL.
IOL & IOH

are adjusted to simulate a typical resistive load circuit.

ATE tester includes jig capacitance.

AC T

EST

ONDITIONS

Parameter

Typ

Unit

Input Pulse Levels

= 0, V

= 3.0

Input Rise and Fall

Input and Output Reference Level

1.5

Output Timing Reference Level

1.5

AC C

HARACTERISTICS

= 5.0V, GND = 0V, T

= -55°C

+125°C)

Parameter

Symbol

-15

-17

-20

-25

-35

-45

-55

Units

Read Cycle

Min

Max

Min

Max Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Read Cycle Time

Address Access Time

Output Hold from Address Change

Chip Select Access Time

ACS

Output Enable to Output Valid

Chip Select to Output in Low Z

CLZ

Output Enable to Output in Low Z

OLZ

Chip Disable to Output in High Z

CHZ

Output Disable to Output in High Z

OHZ

1. This parameter is guaranteed by design but not tested.

AC C

HARACTERISTICS

= 5.0V, GND = 0V, T

= -55°C

+125°C)

Parameter

Symbol

-15

-17

-20

-25

-35

-45

-55

Units

Write Cycle

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Write Cycle Time

Chip Select to End of Write

Address Valid to End of Write

Data Valid to End of Write

Write Pulse Width

Address Setup Time

Address Hold Time

Output Active from End of Write

Write Enable to Output in High Z

WHZ

Data Hold Time

1. This parameter is guaranteed by design but not tested.

WS128K32-XXX /

EDI8C32128C

AC T

EST

IRCUIT

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White Electronic Designs

WS128K32-XXX

PACKAGE 524:

68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G1T)

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

25.27 (0.995)

0.13 (0.005) SQ

23.88 (0.940)

0.25 (0.010) SQ

0.38 (0.015)

0.05 (0.002)

20.3 (0.800) REF

1.27 (0.050)

4.06 (0.160) MAX

0.25 (0.010) MAX

SEE DETAIL "A"

0.84 (0.033) REF

DETAIL A

0.83 (0.033)

0.32 (0.013)

ACKAGE

528: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2L)

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

25.15 (0.990) 0.25 (0.010) MAX

22.36 (0.880) 0.25 (0.010) MAX

20.31 (0.800) REF

0.38 (0.015) 0.05 (0.002)

1.27 (0.050) TYP

5.10 (0.200) MAX

0.25 (0.010) 0.10 (0.002)

24.0 (0.946)

0.25 (0.010)

0.23 (0.009) REF

R 0.127

(0.005)

/ 9

0.89 (0.035)

1.14 (0.045)

1.37 (0.054) MIN 0.004

0.940" TYP

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White Electronic Designs

WS128K32-XXX

LEAD FINISH:

Blank = Gold plated leads

A = Solder dip leads

DEVICE GRADE:

Q = MIL-STD-883 Compliant

M = Military Screened

-55°C to +125°C

I = Industrial

-40°C to +85°C

C = Commercial

0°C to +70°C

PACKAGE TYPE:

H1= 1.075" sq. Ceramic Hex-In-line Package, HIP (Package 400)

G2U = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 510)
G2L = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 528)

G1U

= 23.9mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 519)

G1T = 23.9mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 524)
G4T

= 40 mm Low Profile CQFP (Package 502)

ACCESS TIME (ns)

IMPROVEMENT MARK:

N = No Connect at pin 8, 21, 28 and 39 in HIP for Upgrades

L = Low Power*

ORGANIZATION, 128Kx32

User configurable as 256Kx16 or 512Kx8

SRAM

WHITE ELECTRONIC DESIGNS CORPORATION

ORDERING INFORMATION

W S 128K 32 X - XXX X X X

* Low Power Data Retention only available in G2U, G2L, G1U, G1T PackageTypes

Note 1: Package Not Recommended For New Designs

White Electronic Designs Corporation · (602) 437-1520 · www.whiteedc.com

White Electronic Designs

WS128K32-XXX

DEVICE TYPE

SPEED

PACKAGE

SMD NO.

128K x 32 SRAM Module

55ns

66 pin HIP (H1)

5962-93187 05H4X

128K x 32 SRAM Module

45ns

66 pin HIP (H1)

5962-93187 06H4X

128K x 32 SRAM Module

35ns

66 pin HIP (H1)

5962-93187 07H4X

128K x 32 SRAM Module

25ns

66 pin HIP (H1)

5962-93187 08H4X

128K x 32 SRAM Module

20ns

66 pin HIP (H1)

5962-93187 09H4X

128K x 32 SRAM Module

17ns

66 pin HIP (H1)

5962-93187 10H4X

128K x 32 SRAM Module

15ns

66 pin HIP (H1)

5962-93187 11H4X

128K x 32 SRAM Module

55ns