1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS1M8-XCX
White Electronic Designs
2x512Kx8 DUALITHIC SRAM
PRELIMINARY*
FEATURES
Access Times 70, 85, 100ns
Evolutionary, Corner Power/Ground Pinout
Packaging:
32 pin, Hermetic Ceramic DIP (Package 300)
Organized as two banks of 512Kx8
Commercial, Industrial and Military Temperature
Ranges
5 Volt Power Supply
Low Power CMOS
TTL Compatible Inputs and Outputs
Output Enable Internally tied to GND.
* This datasheet describes a product that is not fully qualified or
characterized and is subject to change without notice.
November 2002 Rev. 2
NOTE:
1. CS
1
and CS
2
are used to select the lower and upper 512Kx8
of the device. CS
1
and CS
2
must not be enabled at the same
time.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
V
CC
A15
A17
WE
A13
A8
A9
A11
CS2
A10
CS1
I/O7
I/O6
I/O5
I/O4
I/O3
PIN CONFIGURATION FOR WS1M8-XCX
32 DIP
TOP VIEW
BLOCK DIAGRAM
512K x 8
512K x 8
A
0-18
WE
CS
1
CS
2
I/O
0-7
(1)
(1)
A
0-18
Address Inputs
I/O
0-7
Data Input/Output
CS
1-2
Chip Selects
WE
Write Enable
V
CC
+5.0V Power Supply
GND
Ground
PIN DESCRIPTION
2
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
WS1M8-XCX
White Electronic Designs
T
RUTH
T
ABLE
A
BSOLUTE
M
AXIMUM
R
ATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
T
A
-55
+125
C
Storage Temperature
T
STG
-65
+150
C
Signal Voltage Relative to GND
V
G
-0.5 V
CC
+0.5 V
Junction Temperature
T
J
150
C
Supply Voltage
V
CC
-0.5
7.0
V
CS
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
L
Write
Data In
Active
NOTE: OE is internally tied to GND.
R
ECOMMENDED
O
PERATING
C
ONDITIONS
Parameter
Symbol
Condition
Max Unit
Input capacitance
C
IN
V
IN
= 0V, f = 1.0MHz
28
pF
Output capicitance
C
OUT
V
OUT
= 0V, f = 1.0MHz
28
pF
This parameter is guaranteed by design but not tested.
Parameter
Symbol
Min
Max
Unit
Supply Voltage
V
CC
4.5
5.5
V
Input High Voltage
V
IH
2.2
V
CC
+ 0.3
V
Input Low Voltage
V
IL
-0.3
+0.8
V
Operating Temp. (Mil.)
T
A
-55
+125
C
C
APACITANCE
(T
A
= +25C)
DC C
HARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55C
TO
+125C)
Parameter
Sym
Conditions
Units
Min
Max
Input Leakage Current
I
LI
V
CC
= 5.5, V
IN
= GND to V
CC
10
A
Output Leakage Current
I
LO
1
CS = V
IH
, V
OUT
= GND to V
CC
10
A
Operating Supply Current
I
CC
1
CS = V
IL
, f = 5MHz, Vcc = 5.5
55
mA
Standby Current
I
SB
1
CS = V
IH
, f = 5MHz, Vcc = 5.5
2
mA
Output Low Voltage
V
OL
I
OL
= 2.1mA
0.4
V
Output High Voltage
V
OH
I
OH
= -1.0mA
2.4
V
NOTE: DC test conditions: V
IH
= V
CC
-0.3V , V
IL
= 0.3V
1. OE is internally tied to GND.
D
ATA
R
ETENTION
C
HARACTERISTICS
(T
A
= -55C
TO
+125C)
Parameter
Sym
Conditions
Units
Min
Typ
Max
Data Retention Supply Voltage
V
DR
CS V
SS
-0.2V
2.0
5.5
V
Data Retention Current
I
CCDR
1
V
CC
= 3V
150
800*
A
* Also available in Low Power version. Please call factory for information.
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS1M8-XCX
White Electronic Designs
AC C
HARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55C
TO
+125C)
Parameter
Symbol
-70
-85
-100
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
70
85
100
ns
Address Access Time
t
AA
70
85
100
ns
Output Hold from Address Change
t
OH
5
5
5
ns
Chip Select Access Time
t
ACS
70
85
100
ns
Chip Select to Output in Low Z
t
CLZ
1
5
5
5
ns
Chip Disable to Output in High Z
t
CHZ
1
25
25
25
ns
1. This parameter is guaranteed by design but not tested.
AC C
HARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55C
TO
+125C)
Parameter
Symbol
-70
-85
-100
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
70
85
100
ns
Chip Select to End of Write
t
CW
60
75
80
ns
Address Valid to End of Write
t
AW
60
75
80
ns
Data Valid to End of Write
t
DW
30
30
40
ns
Write Pulse Width
t
WP
50
50
60
ns
Address Setup Time
t
AS
0
0
0
ns
Address Hold Time
t
AH
5
5
5
ns
Output Active from End of Write
t
OW
1
5
5
5
ns
Write Enable to Output in High Z
t
WHZ
1
25
25
35
ns
Data Hold Time
t
DH
0
0
0
ns
1. This parameter is guaranteed by design but not tested.
I
Current Source
D.U.T.
C = 50 pf
eff
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75W.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC T
EST
C
IRCUIT
AC T
EST
C
ONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
V
IL
= 0, V
IH
= 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
4
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
WS1M8-XCX
White Electronic Designs
WS32K32-XHX
WRITE CYCLE - CS CONTROLLED
WRITE CYCLE - WE CONTROLLED
ADDRESS
DATA I/O
WRITE CYCLE 1, WE CONTROLLED
t
AW
t
CW
t
AH
t
WP
t
DW
t
WHZ
t
AS
t
OW
t
DH
t
WC
DATA VALID
CS
WE
ADDRESS
DATA I/O
WRITE CYCLE 2, CS CONTROLLED
t
AW
t
AS
t
CW
t
AH
t
WP
t
DH
t
DW
t
WC
CS
WE
DATA VALID
TIMING WAVEFORM - READ CYCLE
ADDRESS
DATA I/O
READ CYCLE 2 (WE = V
IH
)
t
AA
t
ACS
t
CLZ
t
RC
DATA VALID
HIGH IMPEDANCE
CS
t
CHZ
ADDRESS
DATA I/O
READ CYCLE 1 (CS = V
IL
, WE = V
IH
)
t
AA
t
OH
t
RC
DATA VALID
PREVIOUS DATA VALID
NOTE:OE is internally tied to GND.
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS1M8-XCX
White Electronic Designs
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.4 (1.670) 0.4 (0.016)
PIN 1 IDENTIFIER
0.84 (0.033)
0.4 (0.014)
4.34 (0.171) 0.79 (0.031)
15.04 (0.592)
0.3 (0.012)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
ORDERING INFORMATION
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
M = Military Screened
-55C to +125C
I = Industrial
-40C to +85C
C = Commercial
0C to +70C
PACKAGE:
C = Ceramic 0.600" DIP (Package 300)
ACCESS TIME (ns)
ORGANIZATION, two banks of 512K x 8
SRAM
WHITE ELECTRONIC DESIGNS CORP.
W S 1M8 - XXX C X X
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