1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WS1M8-XXX
July 2004
Rev. 5
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
2x512Kx8 DUALITHICTM SRAM
FEATURES
Access Times 17, 20, 25, 35, 45, 55ns
Revolutionary, Center Power/Ground Pinout
Packaging:
32 pin, Her
met ic Ceramic DIP (Package 300)
36 lead Ceramic SOJ (Package 100)
36 lead Ceramic Flatpack (Package 226)
36
CSOJ
36
FLATPACK
TOP VIEW
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
A0
A1
A2
A3
A4
CS1#
I/O0
I/O1
V
CC
GND
I/O2
I/O3
WE#
A5
A6
A7
A8
A9
NC
A18
A17
A16
A15
OE#
I/O7
I/O6
GND
V
CC
I/O5
I/O4
A14
A13
A12
A11
A10
CS2#
Block Diagram
512K x 8
512K x 8
A 0 - 1 8
O E #
W E #
C S 1 #
C S 2 #
I / O 0 - 7
(1)
(1)
PIN CONFIGURATION FOR WS1M8-XDJX
AND WS1M8-XFX
Pin Description
A0-18
Address Inputs
I/O0-7
Data Input/Output
CS1-2#
Chip Selects
OE#
Output Enable
WE#
Write Enable
V
CC
+5.0V Power
GND
Ground
NOTE:
1. CS1# and CS2# are used to select the lower and upper 512Kx8 of the device. CS1# and CS2# must not be enabled at the same time.
Organized as two banks of 512Kx8
Commercial, Industrial and Military Temperature Ranges
5 Volt Power Supply
Low Power CMOS
TTL Compatible Inputs and Outputs
PIN CONFIGURATION FOR WS1M8-XCX
32
DIP
TOP VIEW
512K x 8
512K x 8
A 0 - 1 8
W E #
C S
1 #
C S
2 #
I / O 0 - 7
(1)
(1)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
V
CC
A15
A17
WE#
A13
A8
A9
A11
CS2#
A10
CS1#
I/O7
I/O6
I/O5
I/O4
I/O3
Pin Description
A0-18
Address Inputs
I/O0-7
Data Input/Output
CS1-2#
Chip Selects
WE#
Write Enable
V
CC
+5.0V Power
GND
Ground
Block Diagram
2
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WS1M8-XXX
July 2004
Rev. 5
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
T
A
-55 +125
C
Storage Temperature
T
STG
-65
+150
C
Signal Voltage Relative to GND
V
G
-0.5
V
CC
+0.5
V
Junction Temperature
T
J
150
C
Supply Voltage
V
CC
-0.5
7.0
V
TRUTH TABLE
CS#
OE#
WE#
Mode
Data I/O
Power
H
X
X
Standby
High Z
Standby
L
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
H
Out Disable
High Z
Active
NOTE: OE# is internally tied to the GND and not accessible on the WS1M8-XCXX.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
V
CC
4.5
5.5
V
Input High Voltage
V
IH
2.2
V
CC
+ 0.3
V
Input Low Voltage
V
IL
-0.3
+0.8
V
Operating Temp. (Mil.)
T
A
-55
+125
C
CAPACITANCE
T
A
= +25C
Parameter
Symbol
Condition
Max
Unit
Input capacitance
C
IN
V
IN
= 0V, f = 1.0MHz
20
pF
Output capicitance
C
OUT
V
OUT
= 0V, f = 1.0MHz
20
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
V
CC
= 5.0V, V
SS
= 0V, -55C T
A
+125C
Parameter
Sym
Conditions
Min
Max
Units
Input Leakage Current
I
LI
V
CC
= 5.5, V
IN
= GND to V
CC
10
A
Output Leakage Current
I
LO
1
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
10
A
Operating Supply Current
I
CC
1
CS# = V
IL
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
180
mA
Standby Current
I
SB
1
CS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 5.5
40
mA
Output Low Voltage
V
OL
I
OL
= 6mA
0.4
V
Output High Voltage
V
OH
I
OH
= -4.0mA
2.4
V
NOTE: DC test conditions: V
IH
= V
CC
-0.3V , V
IL
= 0.3V
1. OE# is internally tied to the GND and not accessible on the WS1M8-XCXX.
3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WS1M8-XXX
July 2004
Rev. 5
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
I
Current Source
D.U.T.
C = 50 pf
eff
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
Notes:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75 .
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load cir cuit.
ATE tester includes jig capacitance.
AC CHARACTERISTICS
V
CC
= 5.0V, V
SS
= 0V, -55C T
A
+125C
Parameter
Read Cycle
Symbol
-17
-20
-25
-35
-45
-55
Units
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
17
20
25
35
45
55
ns
Address Access Time
t
AA
17
20
25
35
45
55
ns
Output Hold from Address Change
t
OH
0
0
0
0
0
0
ns
Chip Select Access Time
t
ACS
17
20
25
35
45
55
ns
Output Enable to Output Valid
t
OE
2
9
10
12
25
25
25
ns
Chip Select to Output in Low Z
t
CLZ
1
2
2
2
4
4
4
ns
Output Enable to Output in Low Z
t
OLZ
2
0
0
0
0
0
0
ns
Chip Disable to Output in High Z
t
CHZ
1
9
10
12
15
20
20
ns
Output Disable to Output in High Z
t
OHZ
2
9
10
12
15
20
20
ns
1. This parameter is guaranteed by design but not tested.
2. OE# is internally tied to the GND and not accessible on the WS1M8-XCXX.
AC CHARACTERISTICS
V
CC
= 5.0V, V
SS
= 0V, -55C T
A
+125C
Parameter
Write Cycle
Symbol
-17
-20
-25
-35
-45
-55
Units
Write Cycle Time
t
WC
17
20
25
35
45
55
ns
Chip Select to End of Write
t
CW
14
14
15
25
35
50
ns
Address Valid to End of Write
t
AW
14
14
15
25
35
50
ns
Data Valid to End of Write
t
DW
9
10
10
20
25
25
ns
Write Pulse Width
t
WP
14
14
15
25
35
40
ns
Address Setup Time
t
AS
0
0
0
0
0
0
ns
Address Hold Time
t
AH
0
0
0
0
5
5
ns
Output Active from End of Write
t
OW
1
2
3
4
4
5
5
ns
Write Enable to Output in High Z
t
WHZ
1
9
9
10
15
15
25
ns
Data Hold Time
t
DH
0
0
0
0
0
0
ns
1. This parameter is guaranteed by design but not tested.
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WS1M8-XXX
July 2004
Rev. 5
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
TIMING WAVEFORM READ CYCLE
WRITE CYCLE CS# CONTROLLED
ADDRESS
DATA I/O
WRITE CYCLE 2, CS# CONTROLLED
t
AW
t
AS
t
CW
t
AH
t
WP
t
DH
t
DW
t
WC
CS#
WE#
DATA VALID
ADDRESS
DATA I/O
READ CYCLE 2 (WE# = V
IH
)
t
AA
t
ACS
t
OE
t
CLZ
t
OLZ
t
OHZ
t
RC
DATA VALID
HIGH IMPEDANCE
CS#
OE#
t
CHZ
ADDRESS
DATA I/O
READ CYCLE 1 (CS# = OE# = V
IL
, WE# = V
IH
)
t
AA
t
OH
t
RC
DATA VALID
PREVIOUS DATA VALID
NOTE: OE# is internally tied to the GND and not accessible on the WS1M8-XCXX.
WRITE CYCLE WE# CON TROLLED
ADDRESS
CS#
WE#
t
AS
t
WP
t
CW
t
AW
t
WC
t
AH
t
OW
t
DH
DATA VALID
t
DW
t
WHZ
DATA I/O
WRITE CYCLE 1, WE# CONTROLLED
5
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WS1M8-XXX
July 2004
Rev. 5
White Electronic Designs Corp. reserves the right to change products or specifi cations without notice.
PACKAGE 100: 36 LEAD, CERAMIC SOJ
1.27 (0.050) TYP
23.37 (0.920) 0.25 (0.010)
PIN 1 IDENTIFIER
21.59 (0.850) TYP
11.3 (0.446)
0.2 (0.009)
0.43 (0.017)
0.05 (0.002)
4.76 (0.184) MAX
0.89 (0.035)
Radius TYP
0.20 (0.008)
0.05 (0.002)
9.55 (0.376) 0.25 (0.010)
1.27 (0.050) 0.25 (0.010)
PACKAGE 226: 36 LEAD, CERAMIC FLAT PACK
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
23.37 (0.920)
0.25 (0.010)
32.64 (1.285) TYP
12.95 (0.510)
0.13 (0.005)
3.8 (0.150)
TYP
3.18 (0.125)
MAX
0.127 (0.005)
0.05 (0.002)
PIN 1
IDENTIFIER
1.27 (0.050) TYP
21.59 (0.850) TYP
38.1 (1.50) 0.4 (0.015)
12.7 (0.500)
0.5 (0.020)
5.1 (0.200)
0.25 (0.010)
0.43 (0.017)
0.05 (0.002)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
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