1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS256K32-XXX
HI-RELIABILITY PRODUCT
256Kx32 SRAM MODULE
PRELIMINARY*
FEATURES
s Access Times 20, 25, 35ns
s MIL-STD-883 Compliant Devices Available
s Packaging
66 pin, PGA Type, 1.185 inch square, Hermetic
Ceramic HIP (Package 401)
68 lead, 40mm, Hermetic CQFP (Package 501)
s Organized as 256Kx32, User Configurable as 512Kx16
s Upgradable to 512Kx32 for future expansion
s Data I/O Compatible with 3.3V devices
s 2V Data Retention devices available
(WS256K32L-XXX low power version only)
s Commercial, Industrial and Military Temperature Range
s 5 Volt Power Supply
s Low Power CMOS
s TTL Compatible Inputs and Outputs
s Weight
WS256K32N-XHX - 13 grams typical
WS256K32-XG4X - 20 grams typical
*
This data sheet describes a product under development, not fully
characterized, and is subject to change without notice.
FIG. 1
PIN CONFIGURATION FOR WS256K32N-XHX
I/O
8
I/O
9
I/O
10
A
13
A
14
A
15
A
16
A
17
I/O
0
I/O
1
I/O
2
NC
NC
GND
I/O
11
A
10
A
11
A
12
V
CC
CS
1
NC
I/O
3
I/O
15
I/O
14
I/O
13
I/O
12
OE
NC
WE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
24
I/O
25
I/O
26
A
6
A
7
NC
A
8
A
9
I/O
16
I/O
17
I/O
18
V
CC
NC
NC
I/O
27
A
3
A
4
A
5
WE
2
CS
2
GND
I/O
19
I/O
31
I/O
30
I/O
29
I/O
28
A
0
A
1
A
2
I/O
23
I/O
22
I/O
21
I/O
20
11 22 33 44 55 66
1 12 23 34 45 56
BLOCK DIAGRAM
TOP VIEW
PIN DESCRIPTION
I/O
0
-
31
Data Inputs/Outputs
A
0-17
Address Inputs
WE
1-2
Write Enables
CS
1-2
Chip Selects
OE
Output Enable
V
CC
Power Supply
GND
Ground
NC
Not Connected
256K x 16
16
I / O
0 - 1 5
CS
1
256K x 16
16
I / O
1 6 - 3 1
2
A
0 - 1 7
O E
WE
CS
WE
1
2
October 2000 Rev. 2
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS256K32-XXX
TOP VIEW
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
V
CC
A
11
A
12
A
13
A
14
A
15
A
16
NC
OE
NC
A
17
NC
NC
NC
NC
NC
NC
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
1
GND
CS
2
WE
A
6
A
7
A
8
A
9
A
10
V
CC
FIG. 2
PIN CONFIGURATION FOR WS256K32-XG4X
PIN DESCRIPTION
I/O
0
-
31
Data Inputs/Outputs
A
0-17
Address Inputs
WE
Write Enable
CS
1-2
Chip Selects
OE
Output Enable
V
CC
Power Supply
GND
Ground
NC
Not Connected
BLOCK DIAGRAM
256K x 16
16
I / O
0 - 1 5
CS
1
256K x 16
16
I / O
1 6 - 3 1
CS
2
A
0
-
1 7
O E
W E
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS256K32-XXX
Parameter
Symbol
Min
Max
Unit
Operating Temperature
T
A
-55
+125
C
Storage Temperature
T
STG
-65
+150
C
Signal Voltage Relative to GND
V
G
-0.5
Vcc+0.5
V
Junction Temperature
T
J
150
C
Supply Voltage
V
CC
-0.5
7.0
V
TRUTH TABLE
RECOMMENDED OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
V
CC
4.5
5.5
V
Input High Voltage
V
IH
2.2
V
CC
+ 0.3
V
Input Low Voltage
V
IL
-0.5
+0.8
V
Operating Temp (Mil)
T
A
-55
+125
C
CS
OE
WE
Mode
Data I/O
Power
H
X
X
Standby
High Z
Standby
L
L
H
Read
Data Out
Active
L
H
H
Out Disable
High Z
Active
L
X
L
Write
Data In
Active
CAPACITANCE
(T
A
= +25
C)
Parameter
Symbol
Conditions
Max
Unit
OE capacitance
C
OE
V
IN
= 0 V, f = 1.0 MHz
28
pF
WE
1-2
capacitance
C
WE
V
IN
= 0 V, f = 1.0 MHz
pF
HIP (PGA)
20
CQFP G4
28
CS
1-2
capacitance
C
CS
V
IN
= 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
C
I/O
V
I/O
= 0 V, f = 1.0 MHz
20
pF
Address input capacitance
C
AD
V
IN
= 0 V, f = 1.0 MHz
28
pF
This parameter is guaranteed by design but not tested.
Parameter
Symbol
Conditions
Units
Min
Max
Input Leakage Current
I
LI
V
CC
= 5.5, V
IN
= GND to V
CC
10
A
Output Leakage Current
I
LO
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
10
A
Operating Supply Current x 32 Mode
I
CC x 32
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
550
mA
Standby Current
I
SB
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 5.5
34
mA
Output Low Voltage
V
OL
I
OL
= 8mA, Vcc = 4.5
0.4
V
Output High Voltage
V
OH
I
OH
= -4.0mA, Vcc = 4.5
2.4
V
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
DC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
C to +125
C)
LOW POWER DATA RETENTION CHARACTERISTICS
(WS256K32L-XXX ONLY)
(T
A
= -55
C to +125
C)
Parameter
Symbol
Conditions
Units
Min
Typ
Max
Data Retention Supply Voltage
V
DR
CS
V
CC
-0.2V
2.0
5.5
V
Data Retention Current
I
CCDR3
V
CC
= 3V
1.0
16
mA
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS256K32-XXX
AC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
C to +125
C)
Parameter
Symbol
-20
-25
-35
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
20
25
35
ns
Address Access Time
t
AA
20
25
35
ns
Output Hold from Address Change
t
OH
0
0
0
ns
Chip Select Access Time
t
ACS
20
25
35
ns
Output Enable to Output Valid
t
OE
12
15
20
ns
Chip Select to Output in Low Z
t
CLZ
1
5
5
5
ns
Output Enable to Output in Low Z
t
OLZ
1
0
0
0
ns
Chip Disable to Output in High Z
t
CHZ
1
12
15
20
ns
Output Disable to Output in High Z
t
OHZ
1
12
15
20
ns
1. This parameter is guaranteed by design but not tested.
I
Current Source
D.U.T.
C = 50 pf
eff
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
FIG. 3
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
V
IL
= 0, V
IH
= 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
AC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
C to +125
C)
Parameter
Symbol
-20
-25
-35
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
20
25
35
ns
Chip Select to End of Write
t
CW
17
20
25
ns
Address Valid to End of Write
t
AW
17
20
25
ns
Data Valid to End of Write
t
DW
12
15
20
ns
Write Pulse Width
t
WP
17
20
25
ns
Address Setup Time
t
AS
0
0
0
ns
Address Hold Time
t
AH
2
2
2
ns
Output Active from End of Write
t
OW
1
0
0
0
ns
Write Enable to Output in High Z
t
WHZ
1
8
10
15
ns
Data Hold Time
t
DH
0
0
0
ns
1. This parameter is guaranteed by design but not tested.
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS256K32-XXX
WS32K32-XHX
FIG. 4
TIMING WAVEFORM - READ CYCLE
FIG. 6
WRITE CYCLE - CS CONTROLLED
FIG. 5
WRITE CYCLE - WE CONTROLLED
ADDRESS
DATA I/O
WRITE CYCLE 1, WE CONTROLLED
t
AW
t
CW
t
AH
t
WP
t
DW
t
WHZ
t
AS
t
OW
t
DH
t
WC
DATA VALID
CS
WE
ADDRESS
DATA I/O
WRITE CYCLE 2, CS CONTROLLED
t
AW
t
AS
t
CW
t
AH
t
WP
t
DH
t
DW
t
WC
CS
WE
DATA VALID
ADDRESS
DATA I/O
READ CYCLE 2 (WE = V
IH
)
t
AA
t
ACS
t
OE
t
CLZ
t
OLZ
t
OHZ
t
RC
DATA VALID
HIGH IMPEDANCE
CS
OE
t
CHZ
ADDRESS
DATA I/O
READ CYCLE 1 (CS = OE = V
IL
, WE = V
IH
)
t
AA
t
OH
t
RC
DATA VALID
PREVIOUS DATA VALID
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