White Microelectronics Phoenix, AZ (602) 437-1520
4
SRAM MODULES
1
256Kx64 SRAM MODULE
ADVANCED*
FEATURES
s Access Times 20, 25, 35ns
s MIL-STD-883 Compliant Devices Available
s Packaging:
116 lead, 40mm, Hermetic CQFP (Package 504)
s Organized as 256Kx64, User Configurable as 512Kx32 or
1Mx16.
s Data I/O Compatible with 3.3V devices
s 2V Data Retention devices available
s Commercial, Industrial and Military Temperature Range
s 5 Volt Power Supply
s Low Power CMOS
s TTL Compatible Inputs and Outputs
s Weight
WS256K64-XG4WX - 20 grams typical
*
This data sheet describes a product that may or may not be under
development and is subject to change or cancellation without notice.
FIG. 1
PIN CONFIGURATION FOR WS256K64-XG4WX
BLOCK DIAGRAM
TOP VIEW
PIN DESCRIPTION
I/O
0-63
Data Inputs/Outputs
A
0-17
Address Inputs
WE
1-4
Write Enables
CS
1-4
Chip Selects
OE
Output Enable
V
CC
Power Supply
GND
Ground
256K x 16
16
I / O
0 - 1 5
CS
1
256K x 16
16
I / O
1 6 - 3 1
CS
2
16
I / O
3 2 - 4 7
CS
3
256K x 16
16
I / O
4 8 - 6 3
CS
4
A
0 - 1 7
O E
WE
1
WE
2
WE
3
WE
4
256K x 16
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
116
115
114
113
112
111
110
109
108
107
106
105
104
103
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
GND
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
V
CC
WE
2
CS
2
NC
NC
NC
A
17
A
16
A
15
NC
NC
OE
CS
3
WE
3
A
14
A
13
A
12
A
11
A
10
NC
NC
NC
V
CC
I/O
32
I/O
33
I/O
34
I/O
60
I/O
59
I/O
58
I/O
57
I/O
56
GND
I/O
55
I/O
54
I/O
53
I/O
52
I/O
51
I/O
50
I/O
49
I/O
48
GND
I/O
47
I/O
46
I/O
45
I/O
44
I/O
43
I/O
42
I/O
41
I/O
40
GND
I/O
39
I/O
38
I/O
37
I/O
36
I/O
35
I/O
2
I/O
1
I/O
0
V
CC
NC
NC
NC
A
0
A
1
A
2
A
3
A
4
WE
1
CS
1
NC
NC
NC
A
5
A
6
A
7
A
8
A
9
NC
CS
4
WE
4
V
CC
I/O
63
I/O
62
I/O
61
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
102
101
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
75
74
WS256K64-XG4WX
September 1998
2
White Microelectronics Phoenix, AZ (602) 437-1520
4
SRAM MODULES
Parameter
Symbol
Condition
Max
Unit
Output Enable Capacitance
C
OE
V
IN
= 0V, f = 1.0MHz
50
pF
Write Enable Capacitance
C
WE
V
IN
= 0V, f = 1.0MHz
20
pF
Chip Select Capacitance
C
CS
V
IN
= 0V, f = 1.0MHz
20
pF
Data I/OCapacitance
C
I
/
O
V
IN
= 0V, f = 1.0MHz
20
pF
Address Input Capacitance
C
AD
V
IN
= OV, f = 1.OMH
Z
50
pF
This parameter is guaranteed by design but not tested.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
T
A
-55
+125
C
Storage Temperature
T
STG
-65
+150
C
Signal Voltage Relative to GND
V
G
-0.5
Vcc + 0.5
V
Junction Temperature
T
J
150
C
Supply Voltage
V
CC
-0.5
7.0
V
RECOMMENDED OPERATING CONDITIONS
CAPACITANCE
(T
A
= +25
C)
DC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
C to +125
C)
Parameter
Sym
Conditions
Units
Min
Max
Input Leakage Current
I
LI
V
CC
= 5.5, V
IN
= GND to V
CC
10
A
Output Leakage Current
I
LO
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
10
A
Operating Supply Current
I
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
920
mA
Standby Current
I
SB
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 5.5
68
mA
Output Low Voltage
V
OL
I
OL
= 8mA, V
CC
= 4.5
0.4
V
Output High Voltage
V
OH
I
OH
= -4.0mA, V
CC
= 4.5
2.4
V
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
Parameter
Symbol
Min
Max
Unit
Supply Voltage
V
CC
4.5
5.5
V
Input High Voltage
V
IH
2.2
V
CC
+ 0.3
V
Input Low Voltage
V
IL
-0.3
+0.8
V
Operating Temp. (Mil.)
T
A
-55
+125
C
TRUTH TABLE
CS
OE
WE
Mode
Data I/O
Power
H
X
X
Standby
High Z
Standby
L
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
H
Out Disable
High Z
Active
WS256K64-XG4WX
White Microelectronics Phoenix, AZ (602) 437-1520
4
SRAM MODULES
3
AC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
C to +125
C)
Parameter
Symbol
-20
-25
-35
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
20
25
35
ns
Address Access Time
t
AA
20
25
35
ns
Output Hold from Address Change
t
OH
0
0
0
ns
Chip Select Access Time
t
ACS
20
25
35
ns
Output Enable to Output Valid
t
OE
12
15
20
ns
Chip Select to Output in Low Z
t
CLZ
1
5
5
5
ns
Output Enable to Output in Low Z
t
OLZ
1
0
0
0
ns
Chip Disable to Output in High Z
t
CHZ
1
12
15
15
ns
Output Disable to Output in High Z
t
OHZ
1
12
15
15
ns
1. This parameter is guaranteed by design but not tested.
I
Current Source
D.U.T.
C = 50 pf
eff
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
FIG. 2
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
V
IL
= 0, V
IH
= 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
AC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
C to +125
C)
Parameter
Symbol
-20
-25
-35
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
20
25
35
ns
Chip Select to End of Write
t
CW
17
20
25
ns
Address Valid to End of Write
t
AW
17
20
25
ns
Data Valid to End of Write
t
DW
12
15
20
ns
Write Pulse Width
t
WP
17
20
25
ns
Address Setup Time
t
AS
0
0
0
ns
Address Hold Time
t
AH
2
2
2
ns
Output Active from End of Write
t
OW
1
0
0
0
ns
Write Enable to Output in High Z
t
WHZ
1
10
10
15
ns
Data Hold Time
t
DH
0
0
0
ns
1. This parameter is guaranteed by design but not tested.
WS256K64-XG4WX
4
White Microelectronics Phoenix, AZ (602) 437-1520
4
SRAM MODULES
WS32K32-XHX
FIG. 3
TIMING WAVEFORM - READ CYCLE
FIG. 5
WRITE CYCLE - CS CONTROLLED
FIG. 4
WRITE CYCLE - WE CONTROLLED
ADDRESS
DATA I/O
WRITE CYCLE 1, WE CONTROLLED
t
AW
t
CW
t
AH
t
WP
t
DW
t
WHZ
t
AS
t
OW
t
DH
t
WC
DATA VALID
CS
WE
ADDRESS
DATA I/O
WRITE CYCLE 2, CS CONTROLLED
t
AW
t
AS
t
CW
t
AH
t
WP
t
DH
t
DW
t
WC
CS
WE
DATA VALID
ADDRESS
DATA I/O
READ CYCLE 2 (WE = V
IH
)
t
AA
t
ACS
t
OE
t
CLZ
t
OLZ
t
OHZ
t
RC
DATA VALID
HIGH IMPEDANCE
CS
OE
t
CHZ
ADDRESS
DATA I/O
READ CYCLE 1 (CS = OE = V
IL
, WE = V
IH
)
t
AA
t
OH
t
RC
DATA VALID
PREVIOUS DATA VALID
WS256K64-XG4WX
White Microelectronics Phoenix, AZ (602) 437-1520
4
SRAM MODULES
5
DEVICE GRADE:
M = Military Screened
-55
C to +125
C
I = Industrial
-40
C to +85
C
C = Commercial
0
C to +70
C
PACKAGE:
G4W = 116 Lead 40mm Ceramic Quad Flat Pack, CQFP (Package 504)
ACCESS TIME (ns)
ORGANIZATION, 256K x 64
User configurable as 1M x 16 or 512K x 32
SRAM
WHITE MICROELECTRONICS
ORDERING INFORMATION
WS256K64-XG4WX
PACKAGE 504:
116 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G4W)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
38 (1.50) REF
4 PLACES
0.38 (0.015)
0.08 (0.003)
68 PLACES
1.27 (0.050)
REF
5.1 (0.200)
0.25 (0.010)
4 PLACES
39.6 (1.56)
0.38 (0.015) SQ
12.7 (0.500)
0.5 (0.020)
4 PLACES
5.1 (0.200) MAX
0.25 (0.010)
0.05 (0.002)
1.27 (0.050)
0.1 (0.005)
PIN 1 IDENTIFIER
Pin 1
W S 256K64 - XXX G4W X
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