1
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
HI-RELIABILITY PRODUCT
WS512K8-XCX
512Kx8 SRAM MODULE, SMD 5962-92078
FEATURES
s Access Times 20, 25, 35, 45ns
s Standard Microcircuit Drawing, 5962-92078
s MIL-STD-883 Compliant Devices Available
s Rad Tolerant Devices Available
s JEDEC Standard 32 pin, Hermetic Ceramic DIP (Package 300)
s Commercial, Industrial andMilitary Temperature Range
(-55
C to +125
C)
s Organized as 512K x 8
s 5 Volt Power Supply
s Low Power CMOS
s TTL Compatible Inputs and Outputs
s Battery Back-Up Operation
PIN CONFIGURATION
TOP VIEW
FIG. 1
BLOCK DIAGRAM
128K x 8
I / O
0 - 7
128K x 8
128K x 8
128K x 8
A
0
- 1 6
O E
Decoder
W E
C S
A
1 7
A
1 8
PIN DESCRIPTION
A
0-18
Address Inputs
I/O
0-7
Data Input/Output
CS
Chip Select
OE
Output Enable
WE
Write Enable
V
CC
+5.0V Power
GND
Ground
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
V
CC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
May 1999 Rev. 2
2
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WS512K8-XCX
FIG. 2
AC TEST CIRCUIT
I
Current Source
D.U.T.
C = 50 pf
eff
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
TRUTH TABLE
Parameter
Symbol
Condition
Max
Unit
Input capacitance
C
IN
V
IN
= 0V, f = 1.0MHz
45
pF
Output capicitance
C
OUT
V
OUT
= 0V, f = 1.0MHz
45
pF
This parameter is guaranteed by design but not tested.
CAPACITANCE
(T
A
= +25
C)
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
V
IL
= 0, V
IH
= 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
T
A
-55
+125
C
Storage Temperature
T
STG
-65
+150
C
Signal Voltage Relative to GND
V
G
-0.5
Vcc+0.5
V
Junction Temperature
T
J
150
C
Supply Voltage
V
CC
-0.5
7.0
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
V
CC
4.5
5.5
V
Input High Voltage
V
IH
2.2
V
CC
+ 0.3
V
Input Low Voltage
V
IL
-0.5
+0.8
V
Operating Temp. (Mil.)
T
A
-55
+125
C
CS
OE
WE
Mode
Data I/O
Power
H
X
X
Standby
High Z
Standby
L
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
H
Out Disable
High Z
Active
DC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
C to +125
C)
Parameter
Symbol
Conditions
-20
-25
-35
-45
Units
Min
Max
Min
Max
Min
Max Min
Max
Input Leakage Current
I
LI
V
CC
= 5.5, V
IN
= GND to V
CC
10
10
10
10
A
Output Leakage Current
I
LO
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
10
10
10
10
A
Operating Supply Current
I
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
210
210
210
210
mA
Standby Current
I
SB
CS = V
IH
, OE = V
IH
, f = 5MHz
80
60
60
55
mA
Output Low Voltage
V
OL
I
OL
= 8mA, Vcc = 4.5
0.4
0.4
0.4
0.4
V
Output High Voltage
V
OH
I
OH
= -4.0mA, Vcc = 4.5
2.4
2.4
2.4
2.4
V
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
DATA RETENTION CHARACTERISTICS
(T
A
= -55
C to +125
C)
Parameter
Symbol
Conditions
-20
-25
-35
-45
Units
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max Min
Typ
Max
Data Retention Supply Voltage
V
DR
CS
V
CC
-0.2V
2.0
5.5
2.0
5.5
2.0
5.5
2.0
5.5
V
Data Retention Current
I
CCDR1
V
CC
= 3V
8.0
12.8
8.0
12.8
8.0 12.8
8.0 12.8
mA
3
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WS512K8-XCX
AC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55
C to +125
C)
AC CHARACTERISTICS
(V
CC
= 5.0V, GND =0V, T
A
= -55
C to +125
C)
Parameter
Symbol
-20
-25
-35
-45
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
20
25
35
45
ns
Chip Select to End of Write
t
CW
16
20
25
30
ns
Address Valid to End of Write
t
AW
16
20
25
30
ns
Data Valid to End of Write
t
DW
15
15
20
25
ns
Write Pulse Width
t
WP
16
20
25
30
ns
Address Setup Time
t
AS
2
2
2
2
ns
Address Hold Time
t
AH
2
2
2
2
ns
Output Active from End of Write
t
OW
1
4
5
5
5
ns
Write Enable to Output in High Z
t
WHZ
1
10
0
15
0
20
0
25
ns
Data Hold Time
t
DH
1
1
1
1
ns
1. This parameter is guaranteed by design but not tested.
Parameter
Symbol
-20
-25
-35
-45
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
20
25
35
45
ns
Address Access Time
t
AA
20
25
35
45
ns
Output Hold from Address Change
t
OH
3
3
3
3
ns
Chip Select Access Time
t
ACS
20
25
35
45
ns
Output Enable to Output Valid
t
OE
10
10
25
35
ns
Chip Select to Output in Low Z
t
CLZ
1
3
3
3
3
ns
Output Enable to Output in Low Z
t
OLZ
1
0
0
0
0
ns
Chip Disable to Output in High Z
t
CHZ
1
15
17
20
30
ns
Output Disable to Output in High Z
t
OHZ
1
12
15
20
25
ns
1. This parameter is guaranteed by design but not tested.
4
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WS512K8-XCX
WS32K32-XHX
FIG. 3
TIMING WAVEFORM - READ CYCLE
FIG. 5
WRITE CYCLE - CS CONTROLLED
FIG. 4
WRITE CYCLE - WE CONTROLLED
ADDRESS
DATA I/O
WRITE CYCLE 1, WE CONTROLLED
t
AW
t
CW
t
AH
t
WP
t
DW
t
WHZ
t
AS
t
OW
t
DH
t
WC
DATA VALID
CS
WE
ADDRESS
DATA I/O
WRITE CYCLE 2, CS CONTROLLED
t
AW
t
AS
t
CW
t
AH
t
WP
t
DH
t
DW
t
WC
CS
WE
DATA VALID
ADDRESS
DATA I/O
READ CYCLE 2 (WE = V
IH
)
t
AA
t
ACS
t
OE
t
CLZ
t
OLZ
t
OHZ
t
RC
DATA VALID
HIGH IMPEDANCE
CS
OE
t
CHZ
ADDRESS
DATA I/O
READ CYCLE 1 (CS = OE = V
IL
, WE = V
IH
)
t
AA
t
OH
t
RC
DATA VALID
PREVIOUS DATA VALID
5
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WS512K8-XCX
PACKAGE 300:
32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
2.5 (0.100)
TYP
1.27 (0.050)
0.1 (0.005)
0.46 (0.018)
0.05 (0.002)
0.84 (0.033)
0.4 (0.014)
3.2 (0.125) MIN
15.04 (0.592)
0.3 (0.012)
0.25 (0.010)
0.05 (0.002)
15.25 (0.600)
0.25 (0.010)
42.4 (1.670)
0.4 (0.016)
4.34 (0.171)
0.79 (0.031)
PIN 1 IDENTIFIER
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
6
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WS512K8-XCX
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
Q = MIL-STD-883 Compliant
M = Military Screened
-55
C to +125
C
I = Industrial
-40
C to +85
C
C = Commercial
0
C to +70
C
PACKAGE:
C = Ceramic 0.600" DIP (Package 300)
ACCESS TIME (ns)
ORGANIZATION, 512K x 8
SRAM
WHITE MICROELECTRONICS
ORDERING INFORMATION
DEVICE TYPE
SPEED
PACKAGE
SMD NO.
512K x 8 SRAM
45ns
32 pin DIP
5962-92078 06HTX
512K x 8 SRAM
35ns
32 pin DIP
5962-92078 07HTX
512K x 8 SRAM
25ns
32 pin DIP
5962-92078 08HTX
512K x 8 SRAM
20ns
32 pin DIP
5962-92078 09HTX
W S 512K 8 - XXX C X X
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