ADVANCE INFORMATION
1Mb x 16 Pseudo Static RAM
WCMC1616V9X
WeidaSemiconductor, Inc.
Document #: 38-14027 Rev. **
Revised August 22, 2001
Features
1T Cell, PSRAM Architecture
High speed: 70 ns
Wide Voltage range:
-- V
CC
range: 2.7V to 3.3V
Low active power
-- Typical active current: 2 mA @ f = 1 MHz
-- Typical active current: 13 mA @ f = f
MAX
Low standby power
Automatic power-down when deselected
Functional Description
[1]
The WCMC1616V9X is a high-performance CMOS pseudo
static RAMs (PSRAM) organized as 1M words by 16 bits that
supports an asynchronous memory interface. This device
features advanced circuit design to provide ultra-low active
current. This is ideal for providing More Battery Life
TM
(MoBL
) in portable applications such as cellular telephones.
The device can be put into standby mode reducing power
consumption by more than 99% when deselected using CE
LOW, CE
2
HIGH or both BHE and BLE are HIGH. The
input/output pins (I/O
0
through I/O
15
) are placed in a
high-impedance state when: deselected (CE HIGH, CE
2
LOW
OE is deasserted HIGH), or during a write operation (Chip
Enabled and Write Enable WE LOW). The device also has an
automatic power-down feature that significantly reduces
power consumption by 99% when addresses are not toggling
even when the chip is selected (Chip Enable CE LOW, CE
2
HIGH and both BHE and BLE are LOW). Reading from the
device is accomplished by asserting the Chip Enables (CE
LOW and CE
2
HIGH) and Output Enable (OE) LOW while
forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE)
is LOW, then data from the memory location specified by the
address pins will appear on I/O
0
to I/O
7
. If Byte High Enable
(BHE ) is LOW, then data from memory will appear on I/O
8
to
I/O
15
. See the Truth Table for a complete description of read
and write modes.
Logic Block Diagram
Note:
1.
For best-practice recommendations, please refer to the Cypress application note "System Design Guidelines" on http://www.cypress .com.
1M x 16
RAM Array
I/O
0
I/O
7
COLUMN DECODER
S
E
N
S
E
A
M
P
S
DATA IN DRIVERS
O E
I/O
8
I/O
15
WE
BLE
BHE
R
O
W
D
E
C
O
D
E
R
Power
-
Down
Circuit
BHE
BLE
A
10
A
1
1
A
1
2
A
1
3
A
1
4
A
1
5
A
1
6
A
1
7
A
1
8
A
1
9
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
CE
2
CE
CE
2
CE
1T
ADVANCE INFORMATION
WCMC1616V9X
Document #: 38-14027 Rev. **
Page 3 of 13
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................65C to +150C
Ambient Temperature with
Power Applied ............................................... 40C to +85C
Supply Voltage to Ground Potential .................
-
0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State
[5, 6, 7]
......................... .....
-
0.4V to 3.3V
DC Input Voltage
[5, 6, 7]
...................... ....
-
0.4V to 3.3V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current .....................................................> 200 mA
Operating Range
[9]
Product Portfolio
Range
Ambient Temperature (T
A
)
V
CC
Industrial
-
25
o
C to +85
o
C
2.7V to 3.3V
Product
V
CC
Range(V)
Speed
(ns)
Power Dissipation
Operating, Icc (mA)
Standby, I
SB2
(
A)
f = 1 MHz
f = f
MAX
Min.
Typ.
Max.
Typ.
[8]
Max.
Typ.
[8]
Max.
Typ.
[8]
Max.
WCMC1616V9X-FI70
2.7
3.0
3.3
70
2
3.5
13
17
80
150
Notes:
5.
V
IH(MAX)
= V
C C
+ 0.5V for pulse durations less than 20ns.
6.
V
IL(MIN)
= -0.5V for pulse durations less than 20ns.
7.
Overshoot and undershoot specifications are characterized and are not 100% tested.
8.
Typical values are included for reference only and are not guranteed or tested. Typical values are measured at V
CC
= V
C C
(typ) and T
A
= 25C
9.
Vcc must be at minimal operational levels before inputs are turned ON.
ADVANCE INFORMATION
WCMC1616V9X
Document #: 38-14027 Rev. **
Page 4 of 13
DC Electrical Characteristics
(Over the Operating Range)
Capacitance
[10]
Thermal Resistance
[10]
Parameter
Description
Test Conditions
WCMC1616V9X-70
Unit
Min.
Typ.
[8]
Max.
Vcc
Supply Voltage
2.7
3.3
V
V
OH
Output HIGH Voltage
I
OH
=
-
1 mA
V
CC
- 0.4
V
V
OL
Output LOW Voltage
I
OL
= 2 mA
0.4
V
V
IH
Input HIGH Voltage
0.8*V
CC
V
CC
+ 0.4
V
V
IL
Input LOW Voltage
F = 0
-
0.4
0.4
V
I
IX
Input Leakage Current
GND < V
I
< Vcc
-
1
+1
A
I
OZ
Output Leakage Current
GND < V
O
< Vcc, Output Disabled
-
1
+1
A
I
CC
V
CC
Operating Supply
Current
f = f
MAX
= 1/t
RC
Vcc = 3.3V,
I
OUT
= 0mA,
CMOS level
13
17
mA
f = 1 MHz
2
3.5
I
SB1
Automatic CE Power-down
Current
-
CMOS Inputs
CE > V
CCQ
-
0.2V, CE
2
< 0.2V
V
IN
> V
CCQ
-
0.2V, V
IN
< 0.2V,
f = f
MAX
(Address and Data Only),
f = 0 (OE, WE, BHE and BLE)
100
525
A
I
SB2
Automatic CE Power-down
Current
-
CMOS Inputs
CE > V
CCQ
-
0.2V, CE
2
< 0.2V
V
IN
> V
CCQ
-
0.2V or V
IN
< 0.2V,
f = 0, V
CC
=3.3V
80
150
A
Parameter
Description
Test Conditions
Max.
Unit
C
IN
Input Capacitance
T
A
= 25C, f = 1 MHz
V
CC
= V
CC(typ)
8
pF
C
OUT
Output Capacitance
8
pF
Parameter
Description
Test Conditions
FBGA
Unit
JA
Thermal Resistance (Junction to
Ambient)
Still Air, soldered on a 3 x 4.5 inch, two-layer
printed circuit board
55
C/W
JC
Thermal Resistance (Junction to
Case)
17
C/W
Note:
10. Tested initially and after design or process changes that may affect these parameters.
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