ChipFind - документация

Электронный компонент: WCMC2016V1X-2XW14I

Скачать:  PDF   ZIP
ADVANCE INFORMATION
128K x 16 Pseudo Static RAM DIE
WCMC2016V1X
Weida Semiconductor, Inc.
38-xyxyx
Revised August 22, 2001
General Physical Specification
For product parameters and availability, please refer to the WCMC2016V1X product datasheet available on the Cypress
Semiconductor Website (http://www.cypress.com).
Product Thickness Guide
Mfg Part Number: GC2016V5A
Substrate Connection Req.: Ground
Die Part Number:
Wafer Diameter [mm]: 200.00
Die Technology: PowerChip 0.165 m
Die Size [m]: 4010.74 x 1565.84
Metal I: 420 nm TiN/AlCu
Step Size [m]: 4095.44 x 1650.89
Metal II: 880 nm TiN/Ti/AlCu/TiN
Scribe Size [m]: 84.70 x 84.94
Metal III: None
Pad Count: 64
Die Passivation: 780nm P-Si3N4 + Polyimide
Pad Size [m]: 73.6 x 73.6
Code
Description
Min
Nom
Max
Unit
XW
Die (25-30 mil) in wafer form.
617
685
754
m
XW14
Die (14 mil) in wafer form.
320
355
391
m
XW11
Die (11 mil) in wafer form.
252
280
308
m
ADVANCE INFORMATION
WCMC2016V1X
38-xyxyx
Page - 2 - of 5
Bond Pad Locations
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
63
64
ADVANCE INFORMATION
WCMC2016V1X
38-xyxyx
Page - 3 - of 5
All units in m. (0,0) is the lower Left hand corner of the die.
Bond Pad Coordinates and Signal Descriptions
ID
Pad Name
Pad Function Description
X Coord
[m]
Y Coord
[m]
1
A15
ADDR
Address
98.31
3950.48
2
TEST1
DNU
Do Not Use
98.31
3851.12
3
A14
ADDR
Address
98.31
3751.76
4
TEST2
DNU
Do Not Use
98.31
3652.40
5
A13
ADDR
Address
98.31
3553.04
6
A12
ADDR
Address
98.31
3453.68
7
A11
ADDR
Address
98.31
3354.32
8
A10
ADDR
Address
98.31
3254.96
9
A9
ADDR
Address
98.31
3155.60
10
A8
ADDR
Address
98.31
3056.24
11
TEST3
DNU
Do Not Use
98.31
2956.88
11
TEST4
DNU
Do Not Use
98.31
2857.52
12
WE
WE
Write Enable/Select Bar
98.31
2758.16
13
CE2
CE
2
Chip Enable/Select 2
98.31
2658.80
14
VCC
V
CC
Power Supply (Core)
98.31
2559.44
15
VCC
V
CC
Power Supply (Core)
98.31
2460.08
16
VSS
GND
Ground (also V
SS
)
98.31
2261.36
17
VSS
GND
Ground (also V
SS
)
98.31
2201.66
18
UBE
BHE
Byte (High) Enable/Select Bar
98.31
2261.36
19
LBE
BLE
Byte (Low) Enable/Select Bar
98.31
2162.00
20
TEST5
DNU
Do Not Use
98.31
2062.64
20
TEST6
DNU
Do Not Use
98.31
1963.28
20
TEST7
DNU
Do Not Use
98.31
1863.92
21
A17
ADDR
Address
98.31
1764.56
22
A7
ADDR
Address
98.31
1665.20
23
A6
ADDR
Address
98.31
1565.84
24
A5
ADDR
Address
98.31
1466.48
25
A4
ADDR
Address
98.31
1367.12
26
A3
ADDR
Address
98.31
1267.76
27
A2
ADDR
Address
98.31
1168.40
28
A1
ADDR
Address
98.31
1069.04
29
A16
ADDR
Address
1467.54
3909.67
30
VSS
GND
Ground
1467.54
3810.31
31
VCC
V
CC
Power Supply (Core)
1467.54
3710.95
32
I/O15
DQ
15
Bi-directional Data
Input/Output 15
1467.54
3611.59
33
I/O7
DQ
7
Bi-directional Data
Input/Output 7
1467.54
3484.95
34
I/O14
DQ
14
Bi-directional Data
Input/Output 14
1467.54
3358.31
35
I/O6
DQ
6
Bi-directional Data
Input/Output 6
1467.54
3231.67
ADVANCE INFORMATION
WCMC2016V1X
38-xyxyx
Page - 4 - of 5
Weida Semiconductor, Inc., 2003. The information contained herein is subject to change without notice. Weida Semiconductor assumes no responsibility for the use of any circuitry other than
circuitry embodied in a Weida Semiconductor product. Nor does it convey or imply any license under patent or other rights. Weida Semiconductor does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Weida Semiconductor products
in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Weida Semiconductor against all charges.
Die Ordering Information
This datasheet is prepared and approved by Weida Semiconductor, Inc.. Weida Semidonductor, Inc. reserve the right to change
the specifications without notice.
More Battery Life is a trademark, and MoBL is a registered trademark, of Cypress Semiconductor.
36
I/O13
DQ
13
Bi-directional Data
Input/Output 13
1467.54
3105.04
37
I/O5
DQ
5
Bi-directional Data
Input/Output 5
1467.54
2978.4
38
I/O12
DQ
12
Bi-directional Data
Input/Output 12
1467.54
2851.76
39
I/O4
DQ
4
Bi-directional Data
Input/Output 4
1467.54
2725.12
40
VSS
GND
Ground (also V
SS
)
1467.54
2598.20
41
VSS
GND
Ground (also V
SS
)
1467.54
2498.84
42
VSS
GND
Ground (also V
SS
)
1467.54
2399.48
43
VCC
VCC
Power Supply (Core)
1467.54
2300.12
44
VCC
VCC
Power Supply (Core)
1467.54
2200.76
45
VCC
VCC
Power Supply (Core)
1467.54
2101.40
46
I/O11
DQ
11
Bi-directional Data
Input/Output 11
1467.54
2002.04
47
I/O3
DQ
3
Bi-directional Data
Input/Output 3
1467.54
1875.40
48
I/O10
DQ
10
Bi-directional Data
Input/Output 10
1467.54
1748.76
49
I/O2
DQ
2
Bi-directional Data
Input/Output 2
1467.54
1622.13
50
I/O9
DQ
9
Bi-directional Data
Input/Output 9
1467.54
1495.49
51
I/O1
DQ
1
Bi-directional Data
Input/Output 1
1467.54
1368.85
52
I/O8
DQ
8
Bi-directional Data
Input/Output 8
1467.54
1242.21
53
I/O0
DQ
0
Bi-directional Data
Input/Output 0
1467.54
1115.57
54
TEST8
DNU
Do Not Use
1467.54
988.61
55
TEST9
DNU
Do Not Use
1467.54
843.80
58
OE#
OE
Output Enable
1467.54
744.44
59
VSS
GND
Ground
1467.54
645.08
60
VCC
VCC
Power Supply (Core)
1467.54
545.72
61
TEST10
DNU
Do Not Use
1467.54
446.36
62
A0
ADDR
Address
1467.54
347.00
Silicon Type
Ordering Code
Wafer Code
Wafer/Die Type
Operating Range
KGD2
WCMC2016V1X-2XWI
XW
Die (25-30 mil) in wafer form.
Industrial
WCMC2016V1X-2XW14I
XW14
Die (14 mil) in wafer form.
WCMC2016V1X-2XW11I
XW11
Die (11 mil) in wafer form.
ID
Pad Name
Pad Function Description
X Coord
[m]
Y Coord
[m]
ADVANCE INFORMATION
WCMC2016V1X
38-xyxyx
Page - 5 - of 5
Revision History
Document Title: WCMC2016V1X MoBL3
2 Mb (128K x 16) Pseudo Static RAM DI
Document Number: 38-xyxyx
Rev
ECN
Issue Date
Orig.
Change
Description of Change
**
MPR
New Datasheet