ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
2N4403
Unit
Vdc
Vdc
Vdc
mAdc
Rating
Characteristics
Symbol
Min
Max
Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -0.1 mAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -0.1 mAdc, IC=0)
Base Cutoff Current (VCB= -35 Vdc, IE=0)
Collect Cutoff Current(V = -35 Vdc, I =0)
1. Pulse Test: Pulse Width 300 us, Duty Cycle 2.0%
<
<
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
I
-5.0
-
-
-
-
-
-0.1
Vdc
Vdc
Vdc
uAdc
uAdc
2N4403
Tstg
PD
C
C
WEITRON
http://www.weitron.com.tw
General Purpose Transistors
PNP Silicon
(Ta=25 C)
-40
-5.0
-600
-40
EMITTER
BASE
Total Device Dissipation T =25 C
-625
mW
Junction Temperature
T j
150
Storage Temperature
-55 to +150
-40
-40
-0.1
CE
B
CEO
A
TO-92
1
2
3
1. EMITTER
2. BASE
3. COLLECTOR
COLLECTOR
3
2
1
2N4403=2N4403
DEVICE MARKING
(1)
Collector-Emitter Saturation Voltage
(IC= -150 mAdc, IB= -15 mAdc)
Base-Emitter Saturation Voltage
(IC= -150 mAdc, IB= -15 mAdc)
hFE
VCE(sat)
Vdc
Vdc
VBE(sat)
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
2N4403
WEITRON
http://www.weitron.com.tw
(IC= -0.1 mAdc, VCE=-1.0 Vdc)
(IC= -1.0 mAdc, VCE=-1.0 Vdc)
(IC= -10 mAdc, VCE=-1.0 Vdc)
(IC= -150 mAdc, VCE=-2.0 Vdc)
(IC= -500 mAdc, VCE=-2.0 Vdc)
30
60
100
100
300
20
-0.4
-0.75
-0.95
-1.3
-0.75
-
-
-
-
-
-
-
-
(1)
(1)
(1)
(1)
DC Current Gain
(IC=- 500 mAdc, IB= -50 mAdc)
(IC= -500 mAdc, IB=- 50 mAdc)
Collector-Base Capacitance
(IE= 0, VCB=-10 Vdc, f=1.0MHz)
Emitter-Base Capacitance
fT
Ccb
hie
hre
hfe
hoe
Ceb
p
10
SMALL-SIGNAL CHARACTERISTICS
(IC= -20 mAdc, VCE=-10 Vdc, f=100 MHz)
200
8.5
30
15k
1.5k
8.0
0.1
-
-
-
-
MHz
Current-Gain-Bandwidth Product
F
pF
(IC= 0, VEB=-0.5 Vdc, f=1.0MHz)
Input Impedance
(IC= -1.0mAdc, VCE=-10 Vdc, f=1.0kHz)
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
(IC= -1.0mAdc, VCE=-10 Vdc, f=1.0kHz)
ohms
-4
(IC= -1.0mAdc, VCE=-10 Vdc, f=1.0kHz)
60
500
(IC= -1.0mAdc, VCE=-10 Vdc, f=1.0kHz)
1.0
100
umhos
SWITCHING CHARACTERISTICS
(VCC= -30 Vdc, VBE= +2.0 Adc,
IC= -150 mAdc,I =-15mAdc)
tr
td
ts
tf
-
-
-
-
15
20
225
ns
Delay Time
Rise Time
Storage Time
Fall Time
B1
(VCC= -30 Vdc, IC= -150 mAdc,
IB1= -15 mAdc,I =-15mAdc)
B2
30
1. Pulse Test : Pulse Width 300s, Duty Cycle 2%
<-
<-
I
I
2N4403
WEITRON
http://www.weitron.com.tw
FIG 1. Turn-On Time
FIG 2. Turn-Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUIT
S cope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+2 V
- 16 V
10 to 100
s,
DUTY CYCLE = 2%
0
1.0 k
- 30 V
200
CS* < 10 pF
1.0 k
- 30 V
200
CS* < 10 pF
+ 4.0 V
< 2 ns
1.0 to 100
s,
DUTY CYCLE = 2%
< 20 ns
+14 V
0
-16 V
FIG 3. Capacitances
REVERSE VOLTAGE (VOLTS)
7.0
10
20
30
5.0
FIG 4. Charge Data
IC , COLLECTOR CURRENT (mA)
0.1
2.0
5.0
10
20
2.0
30
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
Q
,
C
H
A
R
G
E
(
n
C
)
2.0
3.0
5.0
7.0
10
1.0
10
20
50
70 100
200
0.1
300
500
0.7
0.5
VCC = 30 V
IC/IB = 10
Ceb
QT
QA
3.0
1.0
0.5
0.3
0.2
0.3
0.2
30
Ccb
0.7
7.0
FIG 5. Turn-On Time
IC, COLLECTOR CURRENT (mA)
20
30
50
5.0
10
7.0
FIG 6. Rise Time
IC, COLLECTOR CURRENT (mA)
t
,
T
I
M
E
(
n
s
)
70
100
10
20
50
70 100
200
300
500
30
IC/IB = 10
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
td @ VBE(off) = 0
20
30
50
5.0
10
7.0
70
100
10
20
50
70 100
200
300
500
30
VCC = 30 V
IC/IB = 10
t r
,
R
I
S
E
T
I
M
E
(
n
s
)
2N4403
WEITRON
http://www.weitron.com.tw
FIG. 7 Storage Time
IC , COLLECTOR CURRENT (mA)
t s
,
S
T
O
R
A
G
E
T
I
M
E
(
n
s
)
4
10
20
50
70 100
200
300
500
30
100
20
70
50
200
30
IC/IB = 10
IC/IB = 20
IB1 = IB2
ts4 = ts - 1/8 tf
6
8
10
0
4
2
0.1
2.0 5.0
10 20
50
1.0
0.5
0.2
0.01 0.02 0.05
100
FIG. 8 Frequency Effects
f , FREQUENCY (kHz)
N
F
,
N
O
I
S
E
F
I
G
U
R
E
(
d
B
)
IC = 1.0 mA, RS = 430
IC = 500 A, RS = 560
IC = 50 A, RS = 2.7 k
IC = 100 A, RS = 1.6 k
RS = OPTIMUM SOURCE RESISTANCE
50
100 200
500
1 k
2 k
5 k
10 k 20 k
50 k
6
8
10
0
4
2
N
F
,
N
O
I
S
E
F
I
G
U
R
E
(
d
B
)
FIG. 9 Source Resistance Effects
RS, SOURCE RESIST ANCE (OHMS)
f = 1 kHz
IC = 50 A
100
A
500
A
1.0 mA
FIG.10 Current Gain
IC , COLLECTOR CURRENT (mAdc)
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
300
700
30
200
100
1000
h f
e
,
C
U
R
R
E
N
T
G
A
I
N
50
5.0 7.0
2N4403 UNIT 1
2N4403 UNIT 2
500
70
h
i
e
,
I
N
P
U
T
I
M
P
E
D
A
N
C
E
(
O
H
M
S
)
FIG. 11 Input Impedance
IC , COLLECTOR CURRENT (mAdc)
100 k
100
20 k
10 k
5 k
2 k
1 k
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
5.0 7.0
50 k
500
200
2N4403 UNIT 1
2N4403 UNIT 2
FIG. 12 Voltage Feedback Ratio
IC , COLLECTOR CURRENT (mAdc)
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
0.1
20
5.0 7.0
5.0
2.0
1.0
0.5
0.2
h
,
V
O
L
T
A
G
E
F
E
E
D
B
A
C
K
R
A
T
I
O
(
X
1
0
)
r
e
-
4
2N4403 UNIT 1
2N4403 UNIT 2
10
2N4403
WEITRON
http://www.weitron.com.tw
FIG. 13 Output Admittance
IC, COLLECTOR CURRENT (mAdc)
500
1.0
50
20
10
5.0
2.0
h
,
O
U
T
P
U
T
A
D
M
I
T
T
A
N
C
E
(
m
h
o
s
)
o
e
0.1
0.2
0.5 0.7 1.0
2.0 3.0
10
0.3
5.0 7.0
2N4403 UNIT 1
2N4403 UNIT 2
100
FIG. 14 DC Current Gain
IC , COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
3.0
0.1
h
,
N
O
R
M
A
L
I
Z
E
D
C
U
R
R
E
N
T
G
A
I
N
0.5
2.0
3.0
10
50
70
0.2
0.3
0.2
100
1.0
0.7
500
30
20
5.0 7.0
F
E
TJ = 125C
- 55 C
2.0
200
300
25 C
VCE = 1.0 V
VCE = 10 V
FIG. 15 Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
0.5
2.0
3.0
50
0.2
0.3
0
1.0
0.7
5.0 7.0
C
E
IC = 1.0 mA
0.07
0.05
0.03
0.02
0.01
10 mA
100 mA
10
20
30
500 mA
0.005
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