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2N7002DW
Rating
Symbol
Value
Unit
V
DS
V
GS
I
D
P
D
R
JA
60
20
115
200
625
Operating Junction and Storage
Temperature Range
T
J
, Tstg
-55 to 150
C
V
V
V
mA
mW
C/W
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TA=25 C)
Power Dissipation (TA=25 C)
Maximax Junction-to-Ambient
Maximum Ratings
(TA=25 C Unless Otherwise Specified)
Device Marking
2N7002DW=
Note 1:
Pulse Width Limited by Maximum Junction Temperature
Dual N-Channel MOSFET
Features:
*Low On-Resistance : 7.5
*Low Input Capacitance: 22PF
*Low Out put Capacitance : 11PF
*Low Threshole :1 .5V(TYE)
*Fast Switching Speed : 11ns
Mechanical Data:
*Case: SOT-363, Molded Plastic
*Case Material-UL Flammability Rating 94V-0
*Terminals: Solderable per MIL-STD-202, Method 208
*Weight: 0.006 grams(approx.)
Drain-Gate Voltage R <1.0M
GS
_
V
DGR
60
SOT-363(SC-88)
1
2
3
6 5
4
4
5
6
1
2
3
WEITRON
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2N7002DW
Input Capacitance
V
DS
=25V, V
GS
=0V, f=1MHZ
Output Capacitance
V
DS
=25V, V
GS
=0V, f=1MHZ
Reverse Transfer Capacitance
V
DS
=25V, V
GS
=0V, f=1MHZ
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=10 uA
Gate-Threshold Voltage
V
DS
=V , I =-250uA
Gate-body Leakage
V
GS
= 20V, V
DS
=0V
On-State Drain Current
V
GS
=10V, V
DS
=7.5V
Drain-Source On-Resistance
V
GS
=5V, I
D
=0.05A @
V
GS
=10V, I
D
=0.5A @
Forward Transconductance
V
DS
=10V, I
D
=0.2A
Static
Dynamic
Switching
Characteristic
Symbol
Unit
Min
Typ
Max
V
(BR)DSS
V
GS (th)
I
D (
on
)
R
DS (
on
)
I
GSS
I
DSS
g
fs
C
iss
C
oss
C
rss
t
d
(
on
)
t
d(off)
60
70
V
1.0
2.0
V
-
1.5
-
-
-
-
-
1.0
500
-
10
nA
uA
A
mS
0.5
1.0
3.2
4.4
7.5
50
25
5.0
22
11
2.0
PF
7.0
11
nS
nS
20
20
Electrical Characteristics
(TA=25 C Unless otherwise noted)
Zero Gate Voltage Drain Current
-
-
-
80
-
-
-
-
-
-
-
Turn-On Time
V
DD
=30V, R
L
=150 ,I
D
=0.2A
V
GEN
=10V, R
GEN
=25
Turn-Off Time
V
DD
=30V, R
L
=150 , I
D
=0.2A
V
GEN
=10V, R
GEN
=25
GS D
_
+
+
_
Tc=25 C
Tc=125 C
Tj=25 C
Tj =125 C
V
DS
=60V, V
GS
=0V @
V
DS
=60V, V
GS
=0V @
13.5
WEITRON
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2N7002DW
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
V
= 10V
GS
9.0V
8.0V
7.0V
6.5V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0/1.0V
5.5V
5.0V
V
,
DRAIN-SOURCE
V OLTAGE (V)
DS
I
,
D
R
A
I
N
-
S
O
U
R
C
E
C
U
R
R
E
N
T
(
A
)
D
0
1
2
3
4
5
0
0.2
R
,
N
O
R
M
A
L
I
Z
E
D
D
S
(
O
N
)
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
I , DRAIN CURRENT
(A)
D
V
= 5.0V
GS
T = 25C
j
V
= 10V
GS
6
7
0.4
0.6
0.8
1.0
0
0.5
1.0
1.5
2.0
-55
-30
-5
20
45
70
95
120
145
R
,
N
O
R
M
A
L
I
Z
E
D
D
S
(
O
N
)
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
T , JUNCTION TEMPERA TURE (C)
j
V
GS
= 10V, I =
D
0.5A
V
= 5.0V , I = 0.05A
GS
D
0
V
, GA TE TO SOURCE
VOL TAGE (V)
GS
I
= 50mA
D
1
2
3
4
5
6
0
2
4
6
8
10
12
14
16
18
R
,
N
R
M
A
L
I
Z
E
D
D
S
(
O
N
)
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
I
= 500mA
D
FIG.1 On-Region Characteristics
FIG.2 On-Resistance vs Drain Current
FIG.3 On-Resistance vs Junction Temperature
FIG.4 On-Resistance vs. Gate-Source Voltage
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