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Электронный компонент: 2SB1188

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%
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
Limits
Unit
Rating
Symbol
Parameter
Min
Typ
Max
Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Ic=-1mA)
Collector-Base Breakdown Voltage (Ic=-50uA)
Emitter-Base Breakdown Voltage (I =-50uA)
Collector Cutoff Current (V =-20)
Emitter Cutoff Current (V =-4V)
CEO
CBO
EBO
ICBO
IEBO
2SB1188
Tstg
P
WEITRON
http://www.weitron.com.tw
Epitaxial Planar PNP Transistors
(Ta=25 )
-40
-32
-5
-2
-3
0.5
Collector Power Dissipation
I
I
A(DC)
W
Junction Temperature,
T ,j
150,
Storage Temperature
-55 to +150
C
CP
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
SOT-89
C
Collector Current
C
VCBO
VCEO
VEBO
%
C
A (Pulse)*
Vdc
Vdc
Vdc
* Single pulse Pw = 100ms
BV
BV
BV
-40
-32
-5
-
-
-
-
-
-1
-1
-
-
-
-
-
V
V
V
uA
uA
%
(Ta=25
unless otherwise noted
)
C
E
CB
EB
WEITRON
http://www.weitron.com.tw
CLASSIFICATION OF hFE
Rank
P
Q
Range
Marking
BCP
BCQ
BCR
R
180-390
82-180
120-270
2SB1188
ELECTRICAL CHARACTERISTICS
%
(Ta=25
unless otherwise noted
)
C
(Countinued)
Symbol
Parameter
Min
Typ
Max
Unit
Collector-Emitter Saturation Voltage (Ic=-2A, I =-0.2A)
DC Current Gain (V =-3V, Ic=-0.5A)
Transition Frequency (v =-5v, Ic=0.5A, f=30MHz)
Output Capacitancen (V =-10V, I =0A, f=1MHz)
FE
CE(sat)
T
Cob
f
h
V
82
-
80
-
390
-
-
-
65
-0.8
-
-
-
MHz
pF
V
CE
CE
CB
E
B
WEITRON
http://www.weitron.com.tw
2SB1188
F IG .6 C ollector-emitter s aturation
voltage vs . collector current
-5
-10
-20
-50 -100
-500 -1000 -2000
-200
-20
-50
-100
-200
-500
l
C
/l
B
=10
C
O
L
L
E
C
T
O
R


S
A
T
U
R
A
T
I
O
N


V
O
L
T
A
G
E

:

V
C
E
(
s
a
t
)

(
m
V
)
C OLLE C T OR C UR R E NT : I
C
(mA)
T a =100 C
25 C
40 C
F IG .5 C ollector-emitter s aturation
voltage vs . collector current
C
O
L
L
E
C
T
O
R


S
A
T
U
R
A
T
I
O
N


V
O
L
T
A
G
E

:

V
C
E
(
s
a
t
)

(
m
V
)
C O LLE C T O R C UR R E NT : I
C
(mA)
-5
-10
-20
-50
-100
-500 -1000 -2000
-200
-50
-100
-200
-500 T a =25 C
I
C
/I
B
=50
20
10
F IG .4 DC current gain vs .
collector current
50
20
100
200
500
D
C


C
U
R
R
E
N
T


G
A
I
N

:

h
F
E
V
C E
=-3V
C OLLE C T OR C UR R E NT : I
C
(mA)
-5
-10
-20
-50
-100
-500 -1000 -2000
-200
T a =100 C
25 C
25 C
F IG .1 G rounded emitter propagation
characteris tics
B AS E T O E MIT T E R V O L T AG E : V
B E
(V )
C
O
L
L
E
C
T
O
R


C
U
R
R
E
N
T

:

I
C

(
m
A
)
0
-0.2
-0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2
-0.4
-1
-2
-5
-10
-20
-50
-100
-200
-500
-1000
V
C E
=-3V
T a=100 C
25 C
40 C
F IG .2 G rounded emitter output
characteris tics
-0.4
0
-0.8
-1.2
-1.6
-2
0
-0.1
-0.2
-0.3
-0.4
-0.5
I
B
=0A
-250 A
-500 A
-750 A
-1mA
-1.25mA
-1.5mA
-1.75mA
-2mA
-2.25mA
-2.5mA
C
O
L
L
E
C
T
O
R


C
U
R
R
E
N
T

:

I
C

(
A
)
C OLLE C T OR T O E MIT T E R V OLT AG E : V
C E
(V )
T a=25 C
F IG .3 DC current gain vs .
collector current
D
C


C
U
R
R
E
N
T


G
A
I
N

:

h
F
E
-5
-10
-20
-50
-100
-500 -1000 -2000
-200
50
20
100
200
500
T a =25 C
C O LLE C T O R C UR R E NT : I
C
(mA)
V
C E
=6V
3V
1V
ELECTRICAL CHARACTERISTIC CURVES
WEITRON
http://www.weitron.com.tw
2SB1188
F IG .7 B as e-emitter s aturation voltage
vs . collector current
C OLLE T OR C UR R E NT : I
C
(mA)
B
A
S
E


S
A
T
U
R
A
T
I
O
N


V
O
L
T
A
G
E

:

V
B
E
(
s
a
t
)

(
V
)
--5
-10
-20
-50 -100
-500 -1000 -2000
-200
-0.1
-0.05
-0.2
-0.5
-1
I
C
/I
B
=10
T a =25 C
F IG .8 G ain bandwidth product vs .
emitter current
T a =25 C
V
C E
=-5V
E MIT T E R C UR R E NT : I
E
(mA)
T
R
A
N
S
I
T
I
O
N


F
R
E
Q
U
E
N
C
Y

:

f
T

(
M
H
z
)
5
10 20
50 100
500 1000 2000
200
50
100
200
500
F IG .9 C ollector output capacitance vs .
collector-bas e voltage
E mitter input capacitance vs .
emitter-bas e voltage
C O LLE C T O R T O B AS E V O LT AG E : V
C B
(V )
E MIT T E R T O B AS E V O LT AG E : V
E B
(V )
C
O
L
L
E
C
T
O
R


O
U
T
P
U
T


C
A
P
A
C
I
T
A
N
C
E

:

C
o
b

(
p
F
)
E
M
I
T
T
E
R


I
N
P
U
T


C
A
P
A
C
I
T
A
N
C
E











:

C
i
b

(
p
F
)
T a =25 C
f =1MHz
I
E
=0A
I
C
=0A
-0.5
-1
-2
-5
-10
-20 -30
10
20
50
200
300
100
C ib
C ob
F IG .10 S afe operation area
-0.5
-0.2
-0.1
-1
-2
-10
-5
-20
-50
-0.01
-0.05
-0.02
-0.1
-0.5
-0.2
-1
-2
-5
C
O
L
L
E
C
T
O
R


C
U
R
R
E
N
T

:

I
C

(
A
)
C OLLE C T OR T O E MIT T E R VOLT AG E : V
C E
(V)
DC
P
W
=1
00
m
s*
P
W
=1
0m
s*
T a =25 C
*S ingle
nonrepetitive
puls e
I
C Max. (puls e)
WEITRON
http://www.weitron.com.tw
2SB1188
Dim
A
B
C
D
E
G
H
J
K
L
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
2.900
Max
SOT-89
SOT-89 Outline Dimensions
unit:mm
B
A
H
E
J
K
G
D
C
L
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
3.100
1.500TYP