PNP Plastic-Encapsulate Transistor
1.FR-5=1.0 x 0.75 x 0.062 in.
2SB1260=ZL
Device Marking
h t t p : / / w w w . w e i t r o n . c o m . t w
W E I T R O N
2SB1260
Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -50 Adc, IE=0)
Emitter-Base Breakdown Voltage (IE= -50 Adc, IC=0)
Collector Cutoff Current (VCB= -60 Vdc, IE=0)
Emitter Cutoff Current (VEB=-4.0 Vdc, I =0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
-5.0
-
-
-
-
-
-1
Vdc
Vdc
Vdc
uAdc
uAdc
-80
-80
-1
C
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS
%
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
Value
Unit
Rating
, Tstg
P
(Ta=25 )
-80
-80
-5.0
1.0
2.0
0.5
Collector Power Dissipation
I
I
Adc(DC)
W
Junction Temperature,
Tj
Storage Temperature
-55 to +150
C
CP
C
Collector Current
C
VCEO
VCBO
VEBO
%
C
Adc (Pulse)
Vdc
Vdc
Vdc
150,
Transition Frequency
(IC=-50 mAdc, VCE=-5.0 Vdc,f=30 MHz)
fT
DC Current Gain
(IC=-0.1 Adc, VCE=-3.0 Vdc)
Collector-Emitter Saturation Voltage
(IC=-500 mAdc, IB=-50mAdc)
VCE(sat)
-
-
-
-
80
-
-
390
Vdc
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
2SB1260
hFE
82
MHz
CLASSIFICATION OF h FE
Item
Range
P
R
82-180
180-390
-0.4
WEITRON
http://www.weitron.com.tw
Typ
Q
120-270
2SB1260
WEITRON
http://www.weitron.com.tw
FIG.1 Grounded Emitter Propagation
Characteristics
0
-0.1
-1
-100
-1000
B AS E T O E MIT T E R V OLT AG E : V
B E
(V )
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
:
I
C
(
m
A
)
-0.8
-1.2
-1.6
-10
-0.2 -0.4
-1.0
-1.4
-0.6
T a=25C
V
C E
=-5V
FIG.2 Grounded Emitter Output
Characteristics
0
0
-0.2
-0.8
-1.0
-0.4
-0.8
-1.2
-1.6
-0.4
-0.6
-2.0
-0.2
-0.6
-1.0
-1.4
-1.8
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
:
I
C
(
m
A
)
C OLLE C T OR T O E MIT T E R V OLT AG E : V
C E
(V )
T a=25C
-0.05mA
I
B
=0mA
-0.1mA
-0.15mA
-0.2mA
-0.25mA
-0.3mA
-0.35mA
-0.4mA
-0.45mA
FIG.3 DC Current Gain vs.
Collector Current
-1 -2
-5 -10 -20 -50-100 -200 -500
-2000
C OLLE C T OR C UR R E NT : I
C
(mA)
10
D
C
C
U
R
R
E
N
T
G
A
I
N
:
h
F
E
-1000
20
50
100
200
500
1000
V
C E
=-3V
-1V
T a=25C
FIG.4 Collector-Emitter Saturation
Voltage vs. Collector Current
-0.01
-0.02
-0.05
-0.1
-0.2
-0.5
-1
-2
T a=25C
I
C
/I
B
=20
-1 -2
-5 -10 -20 -50 -100-200-500
-2000
-1000
C
O
L
L
E
C
T
O
R
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
:
V
C
E
(
s
a
t
)
(
V
)
C OLLE C T OR C UR R E NT : I
C
(mA)
10
FIG.5 Gain Bandwidth Product vs.
Emitter Current
1
2
5
10 20
50 100 200 500 1000
1
2
5
10
20
50
100
200
500
1000
E MIT T E R C UR R E NT : I
E
(mA)
T
R
A
N
S
I
T
I
O
N
F
R
E
Q
U
E
N
C
Y
:
f
T
(
M
H
z
)
T a=25C
V
C E
=-5V
FIG.6 Collector Output Capacitance
vs. Collector-Base Voltage
-0.2
-0.1
-0.5 -1
-2
-5 -10 -20
-50 -100
1
2
5
10
20
50
100
200
500
1000
T a=25C
f=1MHz
I
E
=0A
C
O
L
L
E
C
T
O
R
O
U
T
P
U
T
C
A
P
A
C
I
T
A
N
C
E
:
C
o
b
(
p
F
)
C OLLE C T OR T O B AS E V OLT AG E : V
C B
(V )
2SB1260
WEITRON
http://www.weitron.com.tw
FIG. 7 Emitter Input Capacitance
vs. Emitter-Base Voltage
-0.1
10
20
-0.2
-0.5
-1
-2
200
1000
-5
-10
500
100
50
T a=25C
f=1MHz
I
C
=0A
E
M
I
T
T
E
R
I
N
P
U
T
C
A
P
A
C
I
T
A
N
C
E
:
C
i
b
(
p
F
)
E MIT T E R T O B AS E V OLT AG E : V
E B
(V )
-0.5
-2
-1
-5 -10 -20
-50 -100
FIG. 8 Safe Operating Area
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
:
I
C
(
A
)
C OLLE C T OR T O E MIT T E R VOLT AG E : V
C E
(V)
-2
-1
-0.5
-0.2
-0.1
-0.05
T a=25C
*
S ingle
nonrepetitive
pulse
I
C Max
. (P ulse)
I
C Max
.
P
W
=1
0m
s
P
W
=1
00
m
s
D
C
WEITRON
http://www.weitron.com.tw
2SB1260
Dim
A
B
C
D
E
G
H
J
K
L
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
2.900
Max
SOT-89
SOT-89 Outline Dimensions
unit:mm
B
A
H
E
J
K
G
D
C
L
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
3.100
1.500TYP
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