ABSOLUTE MAXIMUM RATINGS(TA=25C)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
2SB649
2SB649A
Unit
V
V
V
Rating
2SB649/2SB649A
TO-126C
T
stg
C
C
PNP Epitaxial Planar Transistors
-120
6.0
-160
-180
1.0
+150
W
A
Junction Temperature
Storage Temperature
-55 to +150
1. EMITTER
2. COLLECTOR
3. BASE
Power Disspation
-1.5
1
2
3
WEITRON
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1/5
21-Mar-06
Lead(Pb)-Free
P b
Transition frequency
V
CE
= -5.0V, I
C
= -150mA
Collector-Emitter Saturation Voltage
I
C
= -500mA, I
B
= -50mA
h
FE(1)
V
CE(sat)
C
ob
f
T
V
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
A
=25C unless otherwise noted) (Countinued)
-
-
-
WEITRON
http://www.weitron.com.tw
DC Current Gain
V
CE
= -5.0V, I
C
= -150mA
V
CE
= -5.0V, I
C
= -500mA
60
60
-1.0
320
200
-
-
Base-Emitter Voltage
V
CE
= -5.0V, I
C
= -150mA
V
BE
V
-
-1.5
-
-
-
-
140
Characteristics
Symbol
Min
Typ
Max
Unit
Emitter Cutoff Current
V
EB
= -4.0V, I
C
= 0
Collector Cutoff Current
V
CB
= -160V, I
E
= 0
Collector-Base Breakdown Voltage
I
C
= -10mA, I
B
= 0
Collector-Emitter Breakdown Voltage
I
C
= -1.0mA, I
E
= 0
Emitter-Base Breakdown Voltage
I
C
= 0, I
E
= -1.0mA
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
EBO
I
CBO
-10
-10
V
V
V
A
A
2SB649
2SB649A
2SB649
2SB649A
-180
-120
-160
-5.0
-
-
-
-
-
-
-
-
-
-
MHz
-
-
27
pF
2SB649/2SB649A
2/5
21-Mar-06
Collecotr Output Capacitance
V
CB
= -10V, I
E
= 0, f = 1MHz
h
FE(2)
30
Range
60-120
CLASSIFICATION OF h
FE(1)
100-200
Rank
B
C
D
160-320
WEITRON
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2SB649/2SB649A
3/5
21-Mar-06
Fig.1 Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case temperature T
C
(C)
P
n
o
i
t
a
p
i
s
s
i
d
r
e
w
o
p
r
o
t
c
e
l
l
o
C
C
)
W
(
I
t
n
e
r
r
u
c
r
o
t
c
e
l
l
o
C
C
)
A
(
Collector to emitter voltage V
CE
(V)
Fig.2 Area of Safe Operation
Fig.3 Typical Output Characteristecs
Collector to emitter voltage V
CE
(V)
I
t
n
e
r
r
u
c
r
o
t
c
e
l
l
o
C
C
)
A
(
Fig.4 Typical Transfer Characteristics
I
t
n
e
r
r
u
c
r
o
t
c
e
l
l
o
C
C
)
A
m
(
Base to emitter voltage V
BE
(V)
h
o
i
t
a
r
r
e
f
s
n
a
r
t
t
n
e
r
r
u
c
C
D
E
F
Collector current I
C
(mA)
Fig.5 DC Current Transfer Ratio
vs. Collector Current
Fig.6 Collector to Emitter Saturation Voltage
vs. Collector Current
Collector current I
C
(mA)
V
e
g
a
t
l
o
v
n
o
i
t
a
r
u
t
a
s
r
e
t
t
i
m
e
o
t
r
o
t
c
e
l
l
o
C
)
t
a
s
(
E
C
)
V
(
T
C
= 25C
P
C
W
0
2
=
1.0
0.8
0.6
0.4
0.2
0
10
40
20
I
B
= 0
A
m
5
.
0
0
.
1
5
.
1
0
.
2
5
.
2
0
.
3
5
.
3
0
.
4
5
.
4
0.
5
5.
5
30
50
500
100
10
1
0
0.4
0.8
0.2
0.6
1.0
V
CE
= 5 V
57
=
a
T
C
52
52
I
Cmax
(13.3 V, 1.5 A)
(40 V, 0.5 A)
DC Operation (T
C
= 25C)
(120 V, 0.038 A)
(160 V, 0.02 A)
2SB649A
2SB649
3
1.0
0.3
0.1
0.03
0.01
1
3
10
30
100
300
350
V
CE
= 5V
5
7
=
a
T
C
5
2 C
5
2
C
350
250
200
150
100
50
0
1
10
100
1,000
I
C
= 10 I
B
1.2
1.0
0.8
0.6
0.4
0.2
0
1
10
100
25
25
1,000
57
= a
T
C
WEITRON
http://www.weitron.com.tw
2SB649/2SB649A
4/5
21-Mar-06
Fig.7 Base to Emitter Voltage
vs. Collector Current
Collector current I
C
(mA)
V
e
g
a
t
l
o
v
N
O
r
e
t
t
i
m
e
o
t
e
s
a
B
E
B
)
V
(
f
t
c
u
d
o
r
p
h
t
d
i
w
d
n
a
b
n
i
a
G
T
)
z
H
M
(
Collector current I
C
(mA)
Fig.8 Gain Bandwidth Product
vs. Collector Current
C
e
c
n
a
t
i
c
a
p
a
c
t
u
p
t
u
o
r
o
t
c
e
l
l
o
C
b
o
)
F
p
(
Fig.9 Collector Output Capacitance
vs. Collector to Base Voltage
I
C
= 10 I
B
1.2
1.0
0.8
0.6
0.4
0.2
0
1
10
100
1,000
5
2
=
a
T
C
5
2
5
7
V
CE
= 5 V
240
200
160
120
80
40
0
10
30
100
300
1,000
f = 1 MHz
I
E
= 0
200
100
50
20
10
5
2
1
3
10
30
100
Collector to base voltage V
CB
(V)
WEITRON
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TO-126C Outline Dimensions
unit:mm
2SB649/2SB649A
5/5
21-Mar-06
Min
Max
A
3.000
3.400
A1
1.800
2.200
b
0.660
0.860
b1
1.170
1.370
c
0.450
0.600
D
7.800
8.200
E
10.800
11.200
e
e1
4.460
4.660
L
15.100
15.500
L1
1.300
1.500
P
4.040
4.240
1
2.700
2.900
2
3.100
3.300
Dim
TO-126C
2.280 TYP
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