ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
2SD1616A
2SD16116
Unit
Vdc
Vdc
Vdc
Adc
Rating
Characteristics
Symbol
Min
Max
Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= 2.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 10 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 10 uAdc, IC=0)
Collector Cutoff Current (VCB=60 Vdc, IE=0)
Emitter Cutoff Current (VEB= 6.0 V c, I =0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
6.0
-
-
-
-
-
0.1
Vdc
Vdc
Vdc
uAdc
uAdc
2SD1616
2SD1616A
Tstg
PD
C
C
WEITRON
http://www.weitron.com.tw
NPN Transistors
(Ta=25 C)
120
6.0
1.0
60
60
50
Total Device Dissipation T =25 C
0.75
W
Junction Temperature
T j
150
Storage, Temperature
-55 to +150
50
60
60
120
0.1
d C
A
TO-92
1
2
3
1. EMITTER
3. BASE
2. COLLECTOR
2SD1616
2SD1616A
2SD1616
2SD1616A
Current-Gain-Bandwidth Product
(IC= 100 mAdc, VCE=2.0 Vdc, f=30MHz)
fT
Cob
MHz
Collector-Emitter Saturation Voltage
(IC= 1.0 mAdc, IB= 50 mAdc)
Base-Emitter Saturation Voltage
(IC= 1.0 mAdc, IB= 50 mAdc)
hFE
hFE
VCE(sat)
VBE(sat)
Vdc
Vdc
Vdc
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
-
-
-
0.9
0.15
-
-
100
-
-
-
2SD1616
2SD1616A
WEITRON
http://www.weitron.com.tw
(IC=100 mAdc, VCE=2.0 Vdc)
(IC=1.0 mAdc, VCE= 2.0 Vdc)
DC Current Gain
DC Current Gain
135
600
(1)
(2)
81
0.3
1.2
0.64
0.7
25
PF
160
-
-
-
-
-
-
-
-
Classification of hFE(1)
Rank
L
K
U
Range
135-270
200-400
300-600
SWITCHING CHARACTERISTICS
TYP
-
Base-Emitter on Voltage
(I =50mA, V =2.0V)
C
CE
V (on)
BE
Output Capacitance
(V =10V, I =0V, f= 1MHZ)
CB
E
(1)
(1)
(1)
Turn-On Time
Vcc =10V, Ic =100 mA
V =2-3V
I =-I =10 mA
Storage Time
Fall Time
B1
B2
BE(OFF)
ton
0.07
0.95
0.07
ts
t f
Note:
1. Pulse Test: Pulse Width 350 us, Duty Cycle 2%.
us
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