http://www.weitron.com.tw
WEITRON
A1015
PNP General Purpose Transistors
MAXIMUM RATINGS* (
T
A
=25C unless otherwise noted)
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
TO-92
Rating
Characteristics
Symbol
Symbol
Value
Min
Max
Unit
Unit
1
2
3
1. EMITTER
2. COLLECTOR
3. BASE
1/4
14-Feb-06
C
C
W
mA
V
V
V
Junction Temperature
T
J
I
C
V
EBO
V
CBO
V
CEO
P
D
T
STG
+150
0.4
-150
-5.0
-50
-50
Storage Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
-55 to + 150
A
A
A
V
V
V
I
EBO
Emitter Cut-off Current, V
EB
= -5.0V, I
C
= 0
-0.1
-
I
CEO
Collector Cut-off Current, V
CE
= -50V, I
B
= 0
-0.1
-
I
CBO
Collector Cut-off Current, V
CB
= -50V, I
E
= 0
-0.1
-
V(BR)
EBO
Emitter-Base Breakdown Voltage, I
E
= -100A, I
C
= 0
-5.0
-
V(BR)
CEO
Collector-Emitter Breakdown Voltage, I
C
= -0.1mA, I
B
= 0
-50
-
V(BR)
CBO
Collector-Base Breakdown Voltage, I
C
= -100A, I
E
= 0
-50
-
Lead(Pb)-Free
P b
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Device Dissipation T
A
=25C
Collector Output Capacitance
V
CB
= -10V, I
E
= 0, f = 1MHz
Noise Figure
V
CE
= -6V, I
C
= -0.1mA, Rg = 10k, f = 1KMHz
TransitionFrequence
V
CE
= -10V, I
C
= -1mA, f = 30MHz
-
-
-
-
-
-
-
-
400
V
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
70
CLASSIFICATION OF h
FE1
Rank
Range
Y
O
70-140
-0.3
WEITRON
http://www.weitron.com.tw
V
BE(sat)
V
-1.1
80
19
-
pF
-
-
6
dB
-
GR
120-240
200-400
Cob
NF
MHz
V
CE(sat)
f
T
Base-Emitter Voltage
I
C
=-100mA, I
B
=-10mA
h
FE1
DC Current Gain
V
CE
=-6.0V, I
C
=-2.0mA
Collector-Emitter Saturation Voltage
I
C
=-100mA, I
B
=-10mA
A1015
2/4
14-Feb-06
Characteristics
Symbol
Min
Typ
Max
Unit
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