Surface Mount Switching Diode
SOT-23 Outline Dimensions
*Low Current Leakage
*Low Forward Voltage
*Reverse Recover Time Trr 6ns
*Small Outline Surface Mount SOT-23 Package
Features:
WEITRON
WEITRON
http://www.weitron.com.tw
SWITCHING DIODE
200-215m AMPERRES
70-75 VOLTS
Unit:mm
A
B
D
E
G
M
L
H
J
TOP VIEW
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
K
C
BAS16 / BAV70
BAW56 / BAV99
1
2
3
SOT-23
WEITRON
Maximum Ratings
(EACH DIODE)
Characteristic
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
Unit
Volts
Thermal Characteristics
Characteristic
Symbol
Total Device Dissipation FR-5
Board *
1
, TA=25 C
Derate Above 25 C
Total Device Dissipation
Alumina Substrate*
2
TA=25 C
Derate Above 25 C
P
D
P
D
Max
Unit
BAS16 / BAV70
BAW56 / BAV99
Unit
BAS16
BAV70
BAW56
BAV99
75
70
200
215
500
mAdc
mAdc
Adc
IF
IFM
IFSM
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
R JA
TJ, Tstg
225
1.8
556
300
2.4
417
-55 to + 150
mW
mW/ C
mW
mW/ C
C/W
C/W
C
*1 ER-5=1.0x0.75x0.062 in
*2 Alumina=0.4x0.3x0.024 in 99.5% Alumina
Electrical Characteristics
(TA=25 C Unless Otherwise Note) (Each Diode)
Characteristic
Symbol
Min
Max
Off Characteristics
Adc
Reverse Breakdown Voltage BAS16
Adc
(IBR=100 ) BAV70/BAW56/BAV99
Reverse Voltage Leakage Current
VR=75V
VR=70V
VR=25V, TJ=150 C
VR=25V, TJ=150 C
VR=75V, TJ=150 C
VR=70V, TJ=150 C
VR=70V, TJ=150 C
BAS16
BAV70/BAW56/BAV99
BAS16/BAW56/BAV99
BAV70
BAS16
BAW56/BAV99
BAV70
VBR
IR
75
70
Vdc
1.0
2.5
30.0
60.0
50.0
50.0
100.0
http://www.weitron.com.tw
q
R JA
q
Non-Repetitive Peak
@ t=1.0us
@ t=1.0s
2.0
1.0
Forward Surge Current
WEITRON
BAS16 / BAV70
BAW56 / BAV99
Off Characteristic
Unit
Characteristic
Symbol
Min
Max
Diode Capacition
(VR=0, f=1.0MHz)
BAS16/BAW56
BAV70/BAV99
Forward Voltage
(IF=1.0 mAdc)
(IF=10 mAdc)
(IF=50 mAdc)
(IF=150 mAdc)
Reverse Recovery Time (Figure 1.)
IF=IR=10 mAdc, VR=5.0Vdc
IR(REC)=1.0 mAdc, RL=100
C
D
VF
trr
2.0
1.5
715
855
1000
1250
6.0
PF
mVdc
nS
Device Marking
Item
Marking
Eqivalent Circuit diagram
1
2
3
1
2
3
BAS16
BAV70
BAW56
BAV99
A6
A4
A1
A7
1
2
3
+10V
820
2.0K
100 H
0.1F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
IF
D.U.T.
0.1F
VR
INPUT SIGNAL
tr
tp
10%
90%
t
IF
IR
trr
t
IR(REC)=1.0mA
OUTPUT PULSE
(IF=IR=10mA, MEASURED
AT IR(REC)=1.0mA
Notes:1. A 2.0 k variable resistor for a Forward Current (IF) 0f 10 mA
2. Input pules is adjusted so IR(peak) is equal to 10 mA
3. tp trr
Figure 1. Recovery Time Equivalent Test Circuit
http://www.weitron.com.tw
3
1
WEITRON
BAS16 / BAV70
BAW56 / BAV99
0
2
4
6
8
VR. REVERSW VOLTAGE (VOLTS)
C
D
.
D
I
O
D
E
C
A
P
A
C
I
T
A
N
C
E
( P
F
)
1.00
0.90
0.80
0.70
0.60
FIGURE 5. CAPACITANCE (BAV70)
0
2
4
6
8
0.68
0.64
0.60
0.56
0.52
VR. REVERSE VOLTAGE (VOLTS)
C
D
.
D
I
O
D
E
C
A
P
A
C
I
T
A
N
C
E
( P
F
)
FIGURE 4. CAPACITANCE(BAS16)
0
2
4
6
8
VR. REVERSE VOLTAGE (VOLTS)
C
D
.
D
I
O
D
E
C
A
P
A
C
I
T
A
N
C
E
( P
F
)
0.68
0.64
0.60
0.56
0.52
FIGUTRE 7. CAPACITANCE (BAV99)
VR. REVERSE VOLTAGE (VOLTS)
C
D
.
D
I
O
D
E
C
A
P
A
C
I
T
A
N
C
E
( P
F
)
FIGURE 6. CAPACITANCE(BAW56)
0
2
4
6
8
1.75
1.50
1.25
1.00
0.75
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0
10
20
30
40
50
VR. REVERSE VOLTAGE (VOLTS)
I A
.
R
E
V
E
R
S
E
C
U
R
R
E
N
T
(
A
)
10
1.0
0.1
0.01
0.001
TA=150 C
TA=125 C
TA=25 C
TA=55 C
TA=85 C
FIGURE 3. LEAKAGE CURRENT
0.2
0.4
0.6
0.8
1.0
1.2
VF, FORWARD VOLTAGE (VOLTS)
100
10
1.0
0.1
I F
,
F
O
R
W
A
R
D
C
U
R
R
E
N
T
(
m
A
)
FIGURE 2 .FORWARD VOLTAGE
TA=-40 C
TA=25 C
TA=85 C
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