General Purpose Transistor
PNP Silicon
1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
Total Device Dissipation FR-5 Board
(1)
(Note 1.)T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina
Substrate, (Note 2.) T
A
=25 C
Derate above 25 C
Junction and Storage, Temperature
Characteristics
TJ,Tstg
R JA
PD
PD
Symbol
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Thermal Characteristics
1
2
3
BASE
COLLECTOR
EMITTER
SOT-23
BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
Maximum Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
Value
-65
-45
-30
Unit
Rating
BC856
BC857
BC858,BC859
BC856
BC857
BC858,BC859
IC
VCBO
VEBO
-80
-50
-30
-5.0
-100
mAdc
V
V
V
( T
A
=25 C unless otherwise noted)
1
2
3
1
2
3
MARKING DIAGRAM
XX = Device
Code (See
Table Below)
Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
Typ
http://www.weitron.com.tw
WEITRON
R JA
Collector-Emitter Breakdown Voltage
(I
C
= -10mA)
Collector-Emitter Breakdown Voltage
(I
C
=-10 A ,VEB=0)
Collector-Base Breakdown Voltage
(I
C
=-10 A)
Emitter-Base Breakdown Voltage
(I
E
=-1.0 A)
Collector Cutoff Current (V
CB
=-30V)
(VCB=-30V, TA=150 C)
V
(BR)CEO
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
1/4
Rev A 12-Apr-05
nA
m
A
Off Characteristics
BC856 Series
BC857 Series
BC858, BC859 Series
BC856 Series
BC857 Series
BC858, BC859 Series
BC856 Series
BC857 Series
BC858, BC859 Series
BC856 Series
BC857 Series
BC858, BC859 Series
V
V
V
V
-65
-45
-30
-80
-50
-30
-80
-50
-30
-5.0
-5.0
-5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-15
-4.0
WEITRON
WE IT R ON
BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
V
V
V
DC Current Gain
(IC= -10uA, VCE=-5.0V)
(IC= -2.0mA,VCE=-5.0V)
Collector-Emitter Saturation Voltage
(IC= -10mA, IB=-0.5mA)
(IC= -100mA, IB=-5.0mA)
Base-Emitter Saturation Voltage
(IC= -10mA, IB=-0.5mA)
(IC= -100mA, IB=-5.0mA)
Base-Emitter On Voltage
(IC= -10mA, IB=-0.5mA)
(IC= -100mA, IB=-5.0mA)
hFE
VCE(sat)
VBE(sat)
VBE(on)
On Characteristics
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC858C
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
-
-
-
125
220
420
-
-
-
-
-
-
-
-
-
-
-0.6
-
90
150
270
180
290
520
-0.7
-0.9
-
-
-
250
475
800
-0.3
-0.65
-0.75
-0.82
-
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= -10mA, VCE= -5.0VDC, f=100MHz)
Output Capacitance
(VCB= -10V, f=1.0MHz)
Noise Figure
(IC= -0.2mA, VCE= -5.0Vdc, Rs=2.0k , f=1.0kHz, BW=200Hz)
fT
Cobo
NF
MHz
pF
BC856, BC857, BC858 Series
BC859, Series
100
-
-
-
-
-
-
-
-
4.5
10
4.0
dB
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Characteristics
Symbol
Min
Max
Unit
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
Typ
Device Marking
BC856A=3A; BC856B=3B; BC857A=3E; BC857B=3F; BC857C=3G
BC858A=3J; C858B=3K; BC858C=3L; BC859B=4B; BC859C=4C
2/4
Rev A 12-Apr-05
WEITRON
WE IT R ON
BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
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Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
C
,
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
10
7.0
5.0
3.0
2.0
1.0
Cib
TA=25 C
Cob
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Current-Gain- Bandwidth Product
f T
,
C
U
R
R
E
N
T
-
G
A
I
N
-
B
A
N
D
W
I
D
T
H
P
R
O
D
U
C
T
(
M
H
z
)
400
300
200
150
100
80
60
40
20
30
V
CE
= -10V
T
A
= 25 C
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
V
C
E
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
)
TA=25 C
IC= -200mA
IC= -50mA
IC= -20mA
IC=
-10mA
IC= -100mA
-0.02
-0.1
-1.0
-10
-20
-2.0
-1.6
-1.2
-0.8
-0.4
0
q V
B
,
T
E
M
P
E
R
A
T
U
R
E
C
O
E
F
F
I
C
I
E
N
T
(
m
V
/
C
)
-55 C to +125 C
1.0
1.2
1.6
2.0
2.4
2.8
-0.2
-1.0
-10
-100
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter Temperature Coefficient
Figure1.Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
h F
E
,
N
O
R
M
A
L
I
Z
E
D
D
C
C
U
R
R
E
N
T
G
A
I
N
-0.2
-0.5 -1.0 -2.0
-5.0 -10
-20
-50 -100 -200
2.0
1.5
1.0
0.7
0.5
0.3
0.2
VCE=10V
TA=25 C
Firure2. "Saturation" And "On" Voltage
IC, COLLECTOR CURRENT (mAdc)
V
,
V
O
L
T
A
G
E
(
V
O
L
T
S
)
-0.1 -0.2
-0.5 -1.0
-2.0
-5.0
-10 -20
-50 -100
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
TA=25 C
VBE
(sat)
@IC/BC=10
VBE
(ON)
@VCE= -10V
VCE
(sat)
@IC/BC=10
BC857/BC858/BC859 Series
3/4
Rev A 12-Apr-05
WEITRON
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WE IT R ON
BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
-0.1 -0.2
-1.0 -2.0 -5.0 -10 -20
-50 -100 -200
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
h F
E
,
D
C
C
U
R
R
E
N
T
G
A
I
N
(
N
O
R
M
A
L
I
Z
E
D
)
2.0
1.0
0.5
0.2
VCE= -5.0V
TA= 25 C
-0.2
-0.5 -1.0
-2.0
-5.0 -10
-20
-50 -100 -200
IC, COLLECTOR CURRENT(mA)
Figure 8. "ON" Voltage
V
,
V
o
l
t
a
g
e
(
V
o
l
t
s
)
-1.0
-0.8
-0.6
-0.4
-0.2
0
TJ=25 C
VBE(sat)@IC/IB=10
VCE(sat)@IC/IB=10
VBE@VCE=-5.0V
-0.1 -0.2
-0.5
-1.0 -2.0
-5.0 -10
-50 -100
-20
20
10
40
8.0
6.0
4.0
2.0
VR, REVERSE VOLTAGE (VOLTS)
C
.
C
A
P
A
C
T
I
A
N
C
E
(
p
F
)
TJ=25 C
Cib
Cob
Figure 11. Capacitance
-1.0
-10
-100
Figure 12.Current-Gain-Bandwidth Product
IC, COLLECTOR CURRENT (mA)
f T
,
C
U
R
R
E
N
T
-
G
A
I
N
-
B
A
N
D
W
I
D
T
H
P
R
O
D
U
C
T
500
200
100
50
20
VCE=-5.0V
-0.02 -0.05 -0.1
-0.2
-0.5 -1.0
-2.0
-5.0
-10
-20
-0.4
0
-2.0
-1.6
-1.2
-0.8
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
V C
E,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
IC=
-10mA
-20mA
-50mA
-100mA
-200mA
TJ=25 C
-0.2
-0.5 -1.0
-2.0
-5.0
-10
-20
-50 -100 -200
-1.0
-1.4
-1.8
-2.2
-2.6
-3.3
Figure 10. Base-Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
q V
B
T
E
M
P
E
R
A
T
U
R
E
C
O
E
F
F
I
C
I
E
N
T
(
m
V
/
=
C
)
qVB for VBE
-55 C to 125 C
BC856 Series
4/4
Rev A 12-Apr-05
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