WEITRON
http://www.weitron.com.tw
BSS123
Rating
Symbol
Value
Unit
V
DSS
V
GS
I
D
I
DM
P
D
R
JA
Operating Junction and Storage
Temperature Range
(1)
(2)
T
J
, Tstg
-55 to 150
C
V
V
mA
mA
mW
C/W
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TA=25 C)
Pulsed Drain Current
Power Dissipation (TA=25 C)
Maximax Junction-to-Ambient
Maximum Ratings
(TA=25 C Unless Otherwise Specified)
Device Marking
BSS123=SA
Power MOSFET
N-Channel
1
2
3
GATE
SOURCE
DRAIN
SOT-23
1
2
3
Features:
*Low On-Resistance : 6.0
*Low Input Capacitance: 20PF
*Low Out put Capacitance : 9PF
*Low Threshole :2.8V
*Fast Switching Speed : 20ns
Application:
* DC to DC Converter
* Cellular & PCMCIA Card
* Cordless Telephone
* Power Management in Portable and Battery etc.
100
20
170
680
225
556
+_
WEITRON
http://www.weitron.com.tw
BSS123
Note:
Input Capacitance
V
DS
=25V,
Output Capacitance
V
DS
=25V,
Transfer Capacitance
V
DG
=25V,
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250 uA
Gate-Threshold Voltage
V
DS
=V , I
D
=1.0 mA
Gate-body Leakage Current
V
GS
=
Static Drain-to-Source On-Resistance
V
GS
=10V, I
D
=0.1A
Forward Trans Conductance
V
DS
=25V, I
D
=100 mA
Static
Dynamic Characteristics
Switching Characteristics
Reverse Diode
Characteristic
Symbol
Unit
Min
Typ
Max
V
(BR)DSS
V
GS (th)
gfs
r
DS (
on
)
I
GSS
I
DSS
C
iss
C
oss
C
rss
t
d
(
on
)
t
d(off)
100
-
-
V
0.8
-
2.8
V
-
-
-
15
60
50
nA
uA
5.0
8.0
6.0
ms
20
9.0
4.0
PF
20
40
nS
Electrical Characteristics
(TA=25 C Unless otherwise noted)
Zero Gate Voltage Drain Current
V
DS
=0V, V
GS
=100V,
V
DS
=0V, V
GS
=100V, T
j
=125 C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Diode Forward On-Voltage
I =0.34A, V =0V
-
-
20V, V =0V
DS
Turn-On Delay Time
Turn-Off Delay Time
(V =30V, I =0.28A,
CC
GS
C
D
GS
VSD
1.3
1. Pulse Test: Pulse Width 300us, Duty Cycle 2%.
2. RF-5=1.0 0.75 0.062m.
<_
<_
GS
V
(1)
(1)
T
j
=25 C
V
GS
=0, f=1.0 MHz
V
GS
=0, f=1.0 MHz
V
GS
=0, f=1.0 MHz
V
GS
=10V, R =50 )
__
__
WEITRON
http://www.weitron.com.tw
BSS123
FIG.1 Ohmic Region
FIG.3 Temperature Versus Static
Drain-Source On-Resistance
FIG.4 Temperature Versus Gate
Threshold Voltage
FIG.2 Transfer Characteristics
V ,DRAIN SOURCE VOLTAGE(V)
T ,TEMPERATURE( C)
DS
V ,GATE SOURCE VOLTAGE(V)
GS
I
,
D
R
I
A
N
C
U
R
R
E
N
T
(
A
)
D
I
,
D
R
I
A
N
C
U
R
R
E
N
T
(
A
)
D
I
,
S
T
A
T
I
C
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
N
O
R
M
A
L
I
Z
E
D
)
D
S
(
o
n
)
V
,
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
N
O
R
M
Z
L
I
Z
E
D
)
G
S
(
t
h
)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
1.0
0.8
0.6
0.4
0.2
10
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
- 60
- 20
+ 20
+ 60
+ 100
+ 140
- 60
- 20
+ 20
+ 60
+ 100
+ 140
T =25 C
9V
8V
7V
6V
5V
4V
3V
a
V =10V
GS
V =10V
I =200mA
GS
V =V
DS GS
D
I =1.0mA
D
V =10V
GS
-55 C
125 C
T ,TEMPERATURE( C)
25 C
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