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BSS84
Rating
Symbol
Value
Unite
V
DSS
V
GS
I
D
I
DM
P
D
R
JA
Operating Junction and Storage
Temperature Range
T
J
, Tstg
-55 to 150
C
V
V
mA
mA
mW
C/W
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TA=25 C)
Pulsed Drain Current(tp 10us)
Power Dissipation (TA=25 C)
Maximax Junction-to-Ambient
Maximum Ratings
(TA=25 C Unless Otherwise Specified)
Device Marking
BSS84=PD
Small Signal MOSFET
P-Channel
1
2
3
GATE
SOURCE
DRAIN
SOT-23
1
2
3
Features:
*Low On-Resistance : 10
*Low Input Capacitance: 30PF
*Low Out put Capacitance : 10PF
*Low Threshole : 2.0V
*Fast Switching Speed : 2.5ns
Application:
* DC to DC Converter
* Cellular & PCMCIA Card
* Cordless Telephone
* Power Management in Portable and Battery etc.
50
20
130
520
225
556
-
+
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BSS84
Input Capacitance
V
DS
=5V, V
GS
=0V, f=1MHZ
Output Capacitance
V
DS
=5V, V
GS
=0V, f=1MHZ
Reverse Transfer Capacitance
V
DS
=5V, V
GS
=0V, f=1MHZ
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250 uA
Gate-Source Threshold Voltage
V
DS
=V
GS
, I
D
=1.0 mA
Gate-Source Leakage Current
V
DS
=0V, V
GS
= 20V
Drain-Source On-Resistance
V
GS
=5.0V, I
D
=100mA
Forward Transconductance
V
DS
=25V, I
D
=100mA, f=1.0KHZ
Static
Dynamic
Switching
(2)
Characteristic
Symbol
Unit
Min
Typ
Max
V
(BR)DSS
V
GS (th)
r
DS (
on
)
I
GSS
I
DSS
g
fs
C
iss
C
oss
C
rss
t
d
(
on
)
t
d(off)
50
-
V
0.8
-
2.0
V
-
-
-
-
-
0.1
15
60
uA
uA
mS
5.0
10
30
10
5.0
PF
25
16
8.0
2.5
6000
nS
nS
-
1.0
-
Electrical Characteristics
(TA=25 C Unless otherwise noted)
Zero Gate Voltage Drain Current
V
DS
=25V, V
GS
=0V
V
DS
=50V, V
GS
=0V
-
-
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Turn-On Time
Turn-Off Time
(1)
+
+
-
-
Rise Time
V =-15V, I =-2.5A, R =50
DD
D
L
V =-15V, I =-2.5A, R =50
DD
D
L
V =-15V, I =-2.5A, R =50
DD
D
L
V =-15V, I =-2.5A, R =50
DD
D
L
t
t
Fall Time
f
QT
r
Gate Charge
PC
Source-Drain Diode Characteristics
Continuous Current
Pulsed Current
Forward Voltage
(2)
I
S
I
SM
V
SD
0.130
0.520
A
V
Note:
1. Pulse Test : PW 300us, Duty Cycle 2%.
2. Switching Time is Essentially Independent of Operating Temperature.
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TYPICAL ELECTRICAL CHARACTERISTICS
0
0.3
0.4
0.1
0.6
0.2
FIG1. Transfer Characteristics
1
1.5
2
2.5
3
I D
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
M
P
S
)
VGS, GATE- TO- SOURCE VOLTAGE (VOLTS)
FIG2. On-Region Characteristics
VDS = 10 V
150 C
25 C
- 55 C
0
2
4
10
0
0.15
0.2
VDS, DRAIN- TO- SOURCE VOLTAGE (VOLTS)
I D
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
M
P
S
)
6
0.05
8
0.3
0.1
3.5
0.5
0.25
1
3
9
5
7
3.25 V
2.75 V
2.25 V
2.5 V
3.0 V
VGS = 3.5 V
4
0.35
0.4
0.5
0.45
TJ = 25 C
R
D
S
(
o
n
),
D
R
A
I
N
-
T
O
-
S
O
U
R
C
E
R
E
S
I
S
T
A
N
C
E
(
O
H
M
S
)
FIG3. On-Resistance versus Drain Current
0
0.2
0.4
0.6
2
5
6
FIG4. On-Resistance versus Drain Current
ID, DRAIN CURRENT (AM PS)
25 C
VGS = 4.5 V
4
3
R
D
S
(
o
n
),
D
R
A
I
N
-
T
O
-
S
O
U
R
C
E
R
E
S
I
S
T
A
N
C
E
(
O
H
M
S
)
0
0.2
0.4
0.6
2
5
6
ID, DRAIN CURRENT (AM PS)
VGS = 10 V
4
3
0.1
0.3
0.5
150 C
- 55 C
7
4.5
5.5
3.5
2.5
6.5
0.1
0.3
0.5
150 C
25 C
- 55 C
8
9
7
BSS84
WEITRON
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R
D
S
(
o
n
), D
R
A
I
N
-
T
O
-
S
O
U
R
C
E
R
E
S
I
S
T
A
N
C
E
(
N
O
R
M
A
L
I
Z
E
D
)
FIG5. On-Resistance Variation with Temperature
1
0.001
0.1
1
TJ, JUNCTION TEMPERATURE ( C)
FIG6. Gate Charge
VSD, DIODE FORWARD VOLTAGE (VOLTS)
FIG7. Body Diode Forward Voltage
I D
,
D
I
O
D
E
C
U
R
R
E
N
T
(
A
M
P
S
)
VGS = 10 V
ID = 0.52 A
- 55
-5
45
95
145
TJ = 150 C
0.6
0.8
0
0.5
1.0
1.5
0.01
-55 C
25 C
2.0
V G
S
,
G
A
T
E
-
T
O
-
S
O
U
R
C
E
V
O
L
T
A
G
E
(
V
O
L
T
S
)
0
6
2
0
QT, TOTAL GATE CHARGE (pC)
8
4
500
VDS = 40 V
TJ = 25 C
1000
ID = 0.5 A
1500
1.2
2
1.4
1.6
1.8
VGS = 4.5 V
ID = 0.13 A
2000
2.5
3.0
5
1
7
3
BSS84
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