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Электронный компонент: MMBL4448H

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Surface Mount Switching Diode
Mechanical Data:
Features:
MMBL4448H
1N4448WS
WEITRON
WEITRON
SWITCHING DIODE
250m AMPERES
http://www.weitron.com.tw
SOD-323
SOD-323 Outline Dimensions
1.60
1.80
1.15
1.35
0.80
1.00
0.25
0.40
0.15REF
0.00
0.10
0.089 0.377
2.30
2.70
A
B
C
D
E
H
J
K
1
2
Lead(Pb)-Free
P b
MILLMETERS
Dim
Min
Max
* Fast Switching Speed
* Surface Mount Package Ideally Suited for Automatic Insertion
* For General Purpose Switching Applications
* High Conductance
* Case: SOD-323, Molded Plastic
* Terminals: Plated Leads Solderable per MIL-STD-202, Method 208
* Polarity: Cathode Band
* Weight: 0.004 grams (approx)
Unit:mm
2. ANODE
PIN 1. CATHODE
1/3
26-Jul-06
100 VOLTS
http://www.weitron.com.tw
WEITRON
Maximum Ratings
(T
A
=25C Unless Otherwise note)
Device Marking
Electrical Characteristics
(T
A
=25C Unless Otherwise note)
Off Characteristics
Rating
Symbol
Value
Unit
Characterictics
Symbol
Max
Unit
Forward Continuous Current
RMS Reverse Voltage
Average Recfified Output Current
V
RM
I
FM
100
500
250
V
V
mA
mA
A
Total Device Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
P
D
R
JA
T
J
315
-65 to +150
mW
K/W
C
C
Min
Forward Voltage
Reverse Voltage Leakage Current
V
R
=20V
V
R
=75V
Revarse Recover Time
I
F
=I
R
=10mA, Irr=0.1 x I
R
, R
L
=100
V
F
I
R
Diode Capacitance
V
R
=0, f=1.0MHz
C
T
t
rr
4.0
4.0
V
A
nA
pF
ns
Item
Marking
Eqivalent Circuitdiagram
1N4448WS , MMBL4448H
T5
2
1
200
WEITRON
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Vlotage
V
RRM
V
RWM
V
R
V
R(RMS)
75
V
53
Non-Repetitive Peak Forward Surge Current
@ t=1.0s
@ t=1.0s
I
FSM
I
O
4.0
2.0
IF=5mA
IF=10mA
IF=100mA
IF=150mA
25
2.5
2/3
Non-Repetitive Peak Reverse Voltage
Storage Temperature
T
stg
+150
MMBL4448H
1N4448WS
26-Jul-06
0.72
0.855
1.00
1.25
0.62
-
-
-
-
Reverse Voltage Leakage Current
I
R
=10A
V
(BR)R
V
-
75
-
-
http://www.weitron.com.tw
WEITRON
WEITRON
3/3
Typical Characteristics
0
100
300
0
25
50
75
125
125
150
P
P
O
I
T
A
P
I
S
S
I
D
R
E
W
O
)
W
m
(
N
d
,
AMBIENT TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
200
10
100
1
0.1
0
1000
800
200
400
600
F
,
I
O
)
A
m
(
T
N
E
R
R
U
C
D
R
A
W
R
F
V , FORWARD VOLTAGE (mV)
Fig. 2 Typical Forward Characteristics
F
Ta = -30 C
Ta = 50 C
Ta = 0 C
Ta = 85 C
Ta = 25 C
0.10
1.0
10.0
0.01
0.001
0
20
40
60
80
V , REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
R
Ta = 100 C
Ta = 0 C
Ta = 75 C
Ta = 50 C
Ta = 25 C
Ta = -30 C
0
4
6
8
2
10
I , FORWARD CURRENT (mA)
Fig. 4 Reverse Recovery Time vs.
Forward Current
F
t
r
r
)
S
n
(
E
M
I
T
Y
R
E
V
O
C
E
R
E
S
R
E
V
E
R
,
0
0.5
1.0
1.5
2.0
2.5
0
4
3
2
5
1
6
V , REVERSE VOLTAGE (V)
Fig. 5 Total Capacitance vs.
Reverse Voltage
R
)
F
p
(
E
C
N
A
T
I
C
A
P
A
C
L
A
T
O
T
,
C
T
0
1
2
3
4
f = 1MHz
MMBL4448H
1N4448WS
26-Jul-06