MMBL914H
WEITRON
Maximum Ratings
Thermal Characteristics
Device Marking
Electrical Characteristics
(T
A
=25 C Unless Otherwise note)
Off Characteristics
Rating
Symbol
Value
Unit
Characterictics
Symbol
Max
Unit
Characterictics
Symbol
Max
Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
V
R
I
F
I
FM(Surge)
100
200
500
Vdc
mAdc
mAdc
Total Device Dissipation FR-5
Board T
A
=25 C
Derate Above 25 C
Thermal Resistance, Junction
to Ambient
Total Device Dissipation Alumina
Substrate,
(2)
T
A
=25 C
Derate Above 25 C
Thermal Resistance, Junction to
Ambient
Junction and Storage
Temperature
P
D
P
D
R
JA
TJ, T
stg
225
1.8
556
300
2.4
417
-55 to + 150
mW
mW/ C
mW
mW/ C
C/W
C/W
C
Min
Reverse Breakdown Votalge
(IR=100Adc)
Forward Voltage(IF=10mAdc)
Reverse Voltage
Leakage Current
(V
R
=20Vdc)
(V
R
=75Vdc)
Revarse Recover Time
(I
F
=I
R
=10mAdc)
V(BR)
V
F
I
R
Diode Capacitance
(V
R
=0, f=1.0MHz)
C
T
trr
100
1000
0.025
5.0
4.0
4.0
Vcc
mVdc
Adc
pF
ns
1. FR-5=1.0x0.75x0.062 in 2.Alumina=0.4x0.3x0.024 in. 99.5% alumina.
Item
Marking
Eqivalent Circuitdiagram
MMBL914H
5D
2
1
http://www.weitron.com.tw
q
R
JA
q
+10V
820
2.0K
100 H
0.1F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
IF
D.U.T.
0.1F
VR
INPUT SIGNAL
tr
tp
10%
90%
t
IF
IR
trr
t
IR(REC)=1.0mA
OUTPUT PULSE
(IF=IR=10mA, MEASURED
AT IR(REC)=1.0mA
Notes:1. A 2.0 k variable resistor for a Forward Current (IF) 0f 10 mA
2. Input pules is adjusted so IR(peak) is equal to 10 mA
3. tp trr
F igure 1. R ecovery T ime E quivalent T es t C ircuit
MMBL914H
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
C
D
,
D
I
O
D
E
C
A
P
A
C
I
T
A
N
C
E
(
p
F)
0
2
4
6
8
0.68
0.64
0.60
0.56
0.52
WEITRON
http://www.weitron.com.tw
TA=125 C
TA=85 C
TA=55 C
TA=25 C
TA=150 C
0
10
20
30
40
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
IR
,
R
E
V
E
R
S
E
C
U
R
R
E
N
T
(
A
)
0.001
0.01
0.1
1.0
10
TA=85 C
TA= -40 C
TA=25 C
0.2
0.4
0.6
0.8
1.0
1.2
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
IF
,
F
O
R
W
A
R
D
C
U
R
R
E
N
T
(
m
A
)
100
10
1.0
0.1
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