Darlington Amplifier
Transistors
NPN
MA XIMUM R AT ING S
R ating
S ymbol
Value
Unit
C ollector- E mitter Voltage
VC E S
30
V dc
C ollector- B ase Voltage
V C BO
30
V dc
E mitter- B ase Voltage
V E BO
10
V dc
C ollector C urrent - C ontinuous
IC
300
mAdc
T HE R MA L C HA R A C T E R IS T IC S
C haracteris tic
S ymbol
Max
Unit
Total Device Dissipation F R 5 B oard(1)
TA = 25 C
Derate above 25 C
P D
225
1.8
mW
mW/ C
T hermal R esistance J unction to Ambient
R J A
556
C /W
Total Device Dissipation
Alumina S ubstrate,(2) TA = 25 C
Derate above 25 C
P D
300
2.4
mW
mW/ C
T hermal R esistance J unction to Ambient
R J A
417
C /W
J unction and S torage Temperature
T J , Tstg
- 55 to +150
C
DE V IC E MA R K ING
MMB TA13 = 1M; MMB TA14LT 1 = 1N
E L E C T R IC A L C HA R A C T E R IS T IC S
(TA = 25 C unless otherwise noted)
C haracteris tic
S ymbol
Min
Max
Unit
OF F C HA R A C T E R IS T IC S
C ollector- E mitter B reakdown Voltage
(IC = 100 uAdc, VBE = 0)
V (BR )C E S
30
-
-
-
V dc
C ollector C utoff C urrent
(V C B = 30 Vdc, IE = 0)
IC BO
100
nAdc
E mitter C utoff C urrent
(V E B = 10 Vdc, IC = 0)
IE BO
100
nAdc
1. F R - 5 = 1.0 0.75
0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MMBTA13
MMBTA14
1
2
3
S OT -23
COLLECTOR 3
BASE
1
EMITTER 2
q
__
__
__
__
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WEITRON
MMBTA13
MMBTA14
WEITRON
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E L E C T R IC A L C HA R A C T E R IS T IC S
(TA = 25 C unless otherwise noted) (C ontinued)
C haracteris tic
S ymbol
Min
Max
Unit
ON C HA R A C T E R IS T IC S (3)
DC C urrent G ain
(IC = 10 mAdc, VC E = 5.0 Vdc)
MMB TA13
MMB TA14
(IC = 100 mAdc, VC E = 5.0 Vdc)
MMB TA13
MMB TA14
hFE
5000
10,000
10,000
20,000
-
-
-
-
-
-
-
-
C ollector- E mitter S aturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
VC E (sat)
1.5
V dc
B ase- E mitter On Voltage
(IC = 100 mAdc, VC E = 5.0 Vdc)
V BE
2.0
V dc
S MA L L - S IG NA L C HA R A C T E R IS T IC S
C urrent- G ain - B andwidth P roduct (4)
(IC = 10 mAdc, VC E = 5.0 Vdc, f = 100 MHz)
fT
125
MHz
3. P ulse Test: P ulse Width 300 us, Duty C ycle 2.0%.
4. fT = |hfe| ftest.
RS
in
en
IDEAL
TRANSISTOR
F IG .1. T rans is tor Nois e Model
F IG .2 Nois e Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
F IG .3 Nois e C urrent
f, FREQUENCY (H z)
5.0
10
10
20
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
RS 0
IC = 1.0 m A
100 mA
10 mA
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100 mA
10 mA
e n
,
N
O
I
S
E
V
O
L
T
A
G
E
(
n
V
)
i n
,
N
O
I
S
E
C
U
R
R
E
N
T
(
p
A
)
10 20
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
@
MMBTA13
MMBTA14
WEITRON
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F IG .4 Total Wideband Nois e Voltage
RS, SOURCE RESISTANCE (kW)
F IG .5 W ideband Nois e F igure
RS, SOURCE RESISTANCE (kW)
50
70
100
200
30
10
20
1.0
2.0
5.0
10
20
50
100
200
500
1000
BANDWIDTH = 10 Hz TO 15.7 kHz
IC = 10 mA
100 mA
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0
2.0
5.0
10
20
50
100
200
500
1000
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10 mA
100 mA
IC = 1.0 mA
V T
,
T
O
T
A
L
W
I
D
E
B
A
N
D
N
O
I
S
E
V
O
L
T
A
G
E
(
n
V
)
N
F
,
N
O
I
S
E
F
I
G
U
R
E
(
d
B
)
F IG .6 C apacitance
VR, REVERSE VOLTAGE (VOLTS)
5.0
7.0
10
20
3.0
F IG .7 High F requency C urrent G ain
IC, COLLECTOR CURRENT (m A)
F IG .8 DC C urrent G ain
IC, COLLECTOR CURRENT (mA)
F IG .9 C ollector S aturation R egion
IB, BASE CURRENT (mA)
2.0
200 k
5.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
TJ = 25 C
C
,
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
1.5
2.0
2.5
3.0
1.0
0.5
|
h f
e
|
,
S
M
A
L
L
-
S
I
G
N
A
L
C
U
R
R
E
N
T
G
A
I
N
h F
E
,
D
C
C
U
R
R
E
N
T
G
A
I
N
V C
E
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
Cibo
Cobo
0.5
1.0
2.0
0.5
10
20
50
100 200
500
VCE = 5.0 V
f = 100 MHz
TJ = 25 C
100 k
70 k
50 k
30 k
20 k
10 k
7.0 k
5.0 k
3.0 k
2.0 k
7.0 10
20
30
50 70 100
200 300
500
TJ = 125 C
25 C
- 55 C
VCE = 5.0 V
0.1 0.2
0.5 1.0 2.0
5.0 10 20
50
100 200
500 1000
TJ = 25 C
IC = 10 mA 50 mA
250 mA
500 mA
MMBTA13
MMBTA14
WEITRON
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F IG .12 T hermal R es pons e
t, TIME (ms)
1.0
r
(
t
)
,
T
R
A
N
S
I
E
N
T
T
H
E
R
M
A
L
2.0
5.0
1.0
0.5
0.2
0.1
R
E
S
I
S
T
A
N
C
E
(
N
O
R
M
A
L
I
Z
E
D
)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20
50
10
200
500
100
1.0 k
2.0 k
5.0 k 10 k
F IG .13 A ctive R egion S afe Operating A rea
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 k
0.4
700
500
300
200
100
70
50
30
20
10
0.6
1.0
2.0
4.0
6.0
10
20
40
I C
,
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
m
A
)
TA = 25 C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
ZqJC(t) = r(t) w RqJC T J(pk) - T C = P(pk) ZqJC(t)
ZqJA(t) = r(t) w RqJA T J(pk) - TA = P(pk) ZqJA(t)
1.0 ms
100 ms
TC = 25 C
1.0 s
Des ign Note: Us e of Trans ient T hermal R es is tance Data
FIGURE A
tP
PP
PP
t1
1/f
DUTY CYCLE
t1 f
t1
tP
PEAK PULSE POWER = PP
F IG .10. " On" Voltages
IC, COLLECTOR CURRENT (mA)
F IG .11 Temperature C oefficients
IC, COLLECTOR CURRENT (mA)
1.6
5.0
- 1.0
V
,
V
O
L
T
A
G
E
(
V
O
L
T
S
)
1.4
1.2
1.0
0.8
0.6
7.0
10
20
30
50 70 100 200 300
500
VBE(sat) @ IC/IB = 1000
R
V,
T
E
M
P
E
R
A
T
U
R
E
C
O
E
F
F
I
C
I
E
N
T
S
(
m
V
/
C
)
q
TJ = 25 C
VBE(on) @ VCE = 5.0 V
VCE(sat) @ IC/IB = 1000
- 2.0
- 3.0
- 4.0
- 5.0
- 6.0
5.0 7.0 10
20 30
50 70 100
200 300
500
25 C TO 125 C
- 55 C TO 25 C
*R VC FOR VCE(sat)
VB FOR VBE
25 C TO 125 C
- 55 C TO 25 C
*APPLIES FOR IC/IB 3 hFE/3.0
q
MMBTA13
MMBTA14
WEITRON
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Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.80
3.00
1.05
1.00
2.10
3.10
0.13
1.60
0.61
0.25
A
B
D
E
G
M
L
H
J
TOP VIEW
K
C
SOT-23 Package Outline Dimensions
Unit:mm
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