Document Outline
- MUN5211-21.pdf
- MUN5211-3.pdf
- MUN5211-4.pdf
- MUN5211-5.pdf
- MUN5211-6.pdf
- MUN5211-7.pdf
- MUN5211-8.pdf
- MUN5211-9.pdf
NPN Silicon Bias Resistor Transistor
Collector-Emitter Voltage
Symbol
VCEO
Value
50
Unit
Rating
IC
VCBO
50
mAdc
Vdc
Vdc
Collector Current-Continuous
100
MUN5211 Series
h t t p : / / w w w . w e i t r o n . c o m . t w
W E I T R O N
Maximum Ratings
( T
A
=25 C unless otherwise noted)
Total Device Dissipation FR-5 Board
(1)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage,Temperature Range
Characteristics
TJ,Tstg
R JA
PD
Symbol
Max
Unit
mW
mW/ C
C/W
C
Thermal Characteristics
Device Marking and Resistor Values
(1)
202
1.6
618
-55 to +150
SOT-323(SC-70)
1
2
3
R1
R2
Collector-Base Voltage
1.FR-4 @ minimum pad
2.FR-4 @ 1.0 1.0 inch Pad
Device
MUN5211
MUN5212
MUN5213
MUN5214
MUN5215
MUN5216
MUN5230
Marking
R1(K)
R2(K)
8A
8B
8C
8D
8E
8F
8G
10
22
47
10
10
4.7
1.0
10
22
47
47
8
8
1.0
Device
MUN5231
MUN5232
MUN5233
MUN5234
MUN5235
MUN5236
MUN5237
Marking
R1(K)
R2(K)
8H
8J
8K
8L
8M
8N
8P
2.2
4.7
4.7
22
2.2
100
47
2.2
4.7
47
47
47
100
22
l
l
Lead(Pb)-Free
P b
1/9
Rev.A 30-Dec-05
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MUN5211 Series
Collector-Emitter Breakdown Voltage
(IC=2.0mA, I =0)
Collector-Base Breakdown Voltage
(IC=10 uA ,IE=0)
Collector-Base Cutoff Voltage
(V
CB
=50 V, I =0)
Collector-Emitter Cutoff Current
(ICE=50V, I =0)
Emitter-Base Cutoff Current
V(BR)CEO
ICBO
V(BR)CBO
ICEO
IEBO
mA
V
nA
V
nA
Characteristics
Symbol
Min
Max
Unit
Off Characteristics
Typ
50
-
50
-
-
-
-
100
500
-
-
-
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
B
E
B
(V =6.0V, I =0)
EB
C
0.5
0.2
0.1
0.2
0.9
1.9
2.3
4.3
0.18
1.5
0.13
0.2
0.05
0.13
MUN5211
MUN5212
MUN5213
MUN5214
MUN5215
MUN5216
MUN5230
MUN5231
MUN5232
MUN5233
MUN5234
MUN5235
MUN5236
MUN5237
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2/9
Rev.A 30-Dec-05
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MUN5211 Series
Characteristics
Symbol
Min
Max
Unit
Typ
Electrical Characteristics
(T
A
=25 C Unless Otherwise noted)
(V =5.0V, V =0.050V, R =1.0k )
(V =5.0V, V =0.25V, R =1.0k )
DC Current Gain
(VCE=10V, I =5.0mA)
Output Voltage(on)
(VCC=5.0V, V =2.5V, R =1.0k )
h
On Characteristics
35
60
80
80
160
160
8.0
3.0
15
80
80
80
80
80
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
60
100
140
140
350
350
15
5.0
30
200
150
140
150
140
C
B
L
B
L
MUN5211
(3)
MUN5212
MUN5213
MUN5214
MUN5215
MUN5216
MUN5230
MUN5231
MUN5232
MUN5233
MUN5234
MUN5235
MUN5236
MUN5237
MUN5211
MUN5212
MUN5214
MUN5215
MUN5215/MUN5216/MUN5233
MUN5216
MUN5230
MUN5230
MUN5231
MUN5232
MUN5233
MUN5234
MUN5235
MUN5213
MUN5236
MUN5237
FE
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Vdc
Vdc
Vdc
0.25
Collector-Emitter Saturation Voltage
3. Pulse Test: Pulse Width 300 us, Duty Cycle 2.0%
(I =10mA, I =0.3mA)
B
C
(I =10mA, I =5mA)
B
C
(I =10mA, I =1mA)
B
C
(V =5.0V, V =3.5V, R =1.0k )
CC
L
B
(V =5.0V, V =0.5V, R =1.0k )
CC
L
B
CC
L
B
CC
L
B
(V =5.0V, V =5.5V, R =1.0k )
CC
L
B
(V =5.0V, V =4.0V, R =1.0k )
CC
MUN5230/MUN5231
MUN5215/MUN5216
MUN5232/MUN5233/MUN5234
VCE(sat)
VOL
VOH
Output Voltage(off)
V
V
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MUN5211 Series
Characteristics
Symbol
Min
Max
Unit
Typ
Electrical Characteristics
On Characteristics
(T
A
=25 C Unless Otherwise noted)
Input Resistor
R1/R2
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
0.7
3.3
3.3
15.4
1.54
70
32.9
0.17
0.8
-
0.8
0.055
0.38
0.038
1.7
0.21
1.0
-
1.0
0.1
0.47
0.047
2.1
0.25
1.2
-
1.2
0.185
0.56
0.056
2.6
10
22
47
10
10
4.7
2.2
1.0
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
1.3
6.1
6.1
28.6
2.86
130
61.1
MUN5211
MUN5212
MUN5213
MUN5214
MUN5214
MUN5215
MUN5215/MUN5216
MUN5230/MUN5231/MUN5232
MUN5216
MUN5230
MUN5231
MUN5232
MUN5233
MUN5233
MUN5234
MUN5235
MUN5236
MUN5234
MUN5235
MUN5237
MUN5237
Resistor Ratio MUN5211/MUN5212
k
MUN5213/MUN5236
1
0.1
0.01
0.001
0
20
40
50
I
C
, COLLECT OR CURRENT (mA)
T
A
= -25 C
25 C
75 C
I
C
/I
B
= 10
V CE(sa
t)
,
C
OLLECT
OR V
OL
T
A
GE (
V
OL
T
S)
MUN5211
FIG.2 V versus I
CE(sat)
C
FIG 1. Derating Curve
350
200
150
100
50
0
- 50
0
50
100
150
T
A
, AMBIENT TEMPERA
TURE ( C)
R
JA
= 403 C/W
250
P
D
,
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
(
m
W
)
300
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h FE
,
DC CURRENT
GAIN (NORMALIZED)
FIG.3 DC Current Gain
MUN5211 Series
1000
100
10
1
10
100
I
C
, COLLECT OR CURRENT (m A)
T
A
= 75 C
25 C
-25 C
V
CE
= 10 V
FIG.4 Output Capacitance
50
0
10
20
30
40
4
3
1
2
0
V
R
, REVERSE BIAS VOL TAGE (VOLTS)
C
ob
,
C
AP
A
CIT
ANCE (pF)
f = 1 M Hz
I
E
= 0 V
T
A
= 25 C
I C
,
C
OLLECT
OR CURRENT
(mA)
FIG.5 Output Current versus Input Voltage
MUN5212
75 C
25 C
T
A
= -25 C
100
10
1
0.1
0.01
0.001
0
1
2
3
4
V
in
, INPUT VOLTAGE (VOLTS)
5
6
7
8
9
10
V
O
= 5 V
V
in
,
INPUT
V
OL
T
A
GE (
V
OL
T
S)
10
0
20
30
I
C
, COLLECT OR CURRENT (mA)
10
1
0.1
T
A
= -25 C
75 C
25 C
40
50
FIG.6 Input Voltage versus Output Current
V
O
= 0.2 V
FGI.7 VCE(sat) versus IC
0.001
T
A
= -25 C
75 C
25 C
0.01
0.1
1
40
I
C
, COLLECT OR CURRENT (m A)
0
20
50
I
C
/I
B
= 10
V CE(sa
t)
,
C
OLLECT
OR V
OL
T
A
GE (
V
OL
T
S)
h FE
,
DC CURRENT
GAIN (NORMALIZED)
FIG.8 DC Current Gain
1000
10
I
C
, COLLECT OR CURRENT (m A)
T
A
= 75 C
25 C
-25 C
100
10
1
100
V
CE
= 10 V
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Rev.A 30-Dec-05
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