NPN Plastic-Encapsulate Transistor
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
VCEO
Value
300
Unit
Rating
IC
VCBO
VEBO
300
5.0
mAdc
Vdc
Vdc
Vdc
Collector Current-Continuous
500
1.FR-5=1.0 x 0.75 x 0.062 in.
MXTA42=A42
Device Marking
h t t p : / / w w w . w e i t r o n . c o m . t w
W E I T R O N
M aximum R atings
( T
A
=25 C unless otherwise noted)
Total Device Dissipation FR-5 Board
(Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature Range
Characteristics
TJ,Tstg
R JA
PD
Symbol
Max
Unit
mW
mW/ C
C/W
C
Thermal Characteristics
(1)
500
4.0
250
-55 to +150
MXTA42
Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 Adc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 Adc, IC=0)
Collector Cutoff Current (VCB= 200 Vdc, IE=0)
Emitter Cutoff Current (VEB= 5.0 Vdc, I =0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
5.0
-
-
-
-
-
0.1
Vdc
Vdc
Vdc
uAdc
uAdc
300
300
0.25
C
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
SOT-89
Collector-Emitter Saturation Voltage
(IC= 20 mAdc, IB= 2 mAdc)
Base-Emitter Saturation Voltage
(IC= 20 mAdc, IB= 2 mAdc)
hFE
VCE(sat)
Vdc
Vdc
MHz
VBE(sat)
(V =20 Vdc, I =10 mAdc, f=30MHz)
Transition Frequency
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Unit
Min
Max
MXTA42
WEITRON
http://www.weitron.com.tw
(IC= 1 mAdc, VCE=10 Vdc)
(IC= 10 mAdc, VCE=10 Vdc)
(IC=30 mAdc, VCE=10 Vdc)
60
80
75
250
0.2
0.9
50
-
-
-
-
-
-
(1)
hFE
(2)
hFE
(3)
DC Current Gain
fT
CE
C
Classification of hFE
(2)
Rank
A
B1
B2
C
Range
80-100
100-150
150-200
200-250
MXTA42
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
80
70
60
50
40
30
20
10
I
,
COLLECTOR CURRENT (mA)
FIG.3 Current-Gain-Bandwidth
Tj=25 C
V
EC
=20V
f=20MHz
f
,
C
U
R
R
E
N
T
-
G
A
I
N
-
B
A
N
D
W
I
D
T
H
(
M
H
z
)
IC, COLLECTOR CURRENT (mA)
FIG.2 "On"Voltages
0.1
1.0
10
100
V
,
V
O
L
T
A
G
E
(
V
O
L
T
S
)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
00
V
CE(sat)
@25 C, I
C
I
B
= 10
V
CE(sat)
@125 C, I
C
I
B
=10
V
CE(sat)
@ -55 C, I
C
I
B
=10
V
BE(sat)
@25 C, I
C
I
B
= 10
V
BE(sat)
@125 C, I
C
I
B
=10
V
BE(sat)
@ -55 C, I
C
I
B
=10
V
BE(on)
@25 C,
V
CE
= 10V
V
BE(on)
@125 C,
V
CE
= 10V
V
BE(on)
@-55 C,
V
CE
= 10V
120
100
80
60
40
20
0
Tj=+125 C
25 C
-55 C
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
FIG. 1 DC Current Gain
h
F
E
,
D
C
C
U
R
R
E
N
T
G
A
I
N
Typical Characteristics
WEITRON
http://www.weitron.com.tw
WE IT R ON
C
C
T
WEITRON
WE IT R ON
MXTA42
http://www.weitron.com.tw
Dim
A
B
C
D
E
G
H
J
K
L
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
2.900
Max
SOT-89
SOT-89 Outline Dimensions
unit:mm
B
A
H
E
J
K
G
D
C
L
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
3.100
1.500TYP
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